Zobrazeno 1 - 10
of 222
pro vyhledávání: '"D. Savignac"'
Publikováno v:
Acta Horticulturae. :87-98
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43b475cdf9c3ecd019669b5d4a14471f
https://doi.org/10.17660/actahortic.1997.453.10
https://doi.org/10.17660/actahortic.1997.453.10
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 16:199-204
A methodology is investigated to optimize technological parameters to reduce distribution of circuit performance. Major attention is paid to treat all characteristics from device level to circuit level on one basis, namely technological parameters. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad6a3087511b9f41b420bc97c88cfac8
https://doi.org/10.1109/43.573834
https://doi.org/10.1109/43.573834
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 15:1-7
In this paper, we describe a complete MOSFET model developed for circuit simulation based on fully consistent physical concept. The model describes all transistor characteristics as a function of surface potentials, which are calculated iteratively a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cb394a1583f1f7a4a77c541edd286306
https://doi.org/10.1109/43.486267
https://doi.org/10.1109/43.486267
Autor:
R. Tews, D. Savignac, J. Schmid, Martin Popp, S. Lukas, M. Rouhanian, M. Drubba, Lars Heineck, Hans-Peter Moll, Ines Uhlig, Lars Dreeskornfeld, D. Temmler, Matthias Goldbach, Gouri Sankar Kar, Werner Graf, Erhard Landgraf, D. Weinmann, Wolfgang Roesner, W. Mueller
Publikováno v:
2007 IEEE International Electron Devices Meeting.
We present for the first time the full integration scheme and 512 Mb product data for a trench DRAM technology targeting the 48 nm node. The key technology enablers are a new cell architecture "wordline over bitline" (WOB) realizing a high degree of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::435c4726727098d78ef4bd5ad94effc2
https://doi.org/10.1109/iedm.2007.4418855
https://doi.org/10.1109/iedm.2007.4418855
Publikováno v:
1996 IEEE International Symposium on Circuits and Systems. Circuits and Systems Connecting the World. ISCAS 96.
We have developed a new concept for deriving worst-case parameters based on device physics. With the concept it will be shown that we can predict worst-case performances at device and circuit levels accurately from in-line measurements of technologic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e28b295897397dda88197cdcb9c96e4
https://doi.org/10.1109/iscas.1996.539818
https://doi.org/10.1109/iscas.1996.539818
Autor:
Backx, Simon1 (AUTHOR) simon.backx@ugent.be, Desmedt, Willem2,3 (AUTHOR) willem.desmedt@ilvo.vlaanderen.be, Dejaegere, Andreas1 (AUTHOR) andreas.dejaegere@ugent.be, Simoens, Andreas1 (AUTHOR) andreas.simoens@ugent.be, Van de Poel, Jef1 (AUTHOR) jef.vandepoel@oleon.com, Krasowska, Dorota1 (AUTHOR) dorota.krasowska@cbmm.lodz.pl, Audenaert, Kris2 (AUTHOR) kris.audenaert@ugent.be, Stevens, Christian V.1 (AUTHOR) chris.stevens@ugent.be, Mangelinckx, Sven1 (AUTHOR) sven.mangelinckx@ugent.be
Publikováno v:
International Journal of Molecular Sciences. May2024, Vol. 25 Issue 9, p4739. 15p.
Autor:
Wu, Le-Yi1 (AUTHOR), Song, Yu-Juan1 (AUTHOR), Zhang, Cheng-Lin1 (AUTHOR) 2200243053@email.szu.edu.cn, Liu, Jie1 (AUTHOR)
Publikováno v:
Cells (2073-4409). Jul2023, Vol. 12 Issue 14, p1894. 27p.
Autor:
Molinaro, Pasquale1 (AUTHOR) pmolinar@unina.it, Sanguigno, Luca1 (AUTHOR) lucasanguigno@libero.it, Casamassa, Antonella2 (AUTHOR) antonellacasamassa@gmail.com, Valsecchi, Valeria1 (AUTHOR) valsecchiv@yahoo.com, Sirabella, Rossana1 (AUTHOR) sirabell@unina.it, Pignataro, Giuseppe1 (AUTHOR) gpignata@unina.it, Annunziato, Lucio2 (AUTHOR) lannunzi@unina.it, Formisano, Luigi1 (AUTHOR) lannunzi@unina.it
Publikováno v:
International Journal of Molecular Sciences. Jun2023, Vol. 24 Issue 11, p9177. 13p.
Autor:
Kostoudi, Stavroula1 (AUTHOR) stavroula.kostoudi@yahoo.gr, Pampalakis, Georgios1 (AUTHOR) gpampalakis@pharm.auth.gr
Publikováno v:
International Journal of Molecular Sciences. Mar2022, Vol. 23 Issue 6, p3395-3395. 37p.
Publikováno v:
Phosphorus, Sulfur & Silicon & the Related Elements; 2023, Vol. 198 Issue 10, p783-788, 6p