Zobrazeno 1 - 10
of 27
pro vyhledávání: '"D. S. Sutar"'
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:4248-4257
A systematic investigation of Ga-doped ZnO (GZO) films deposited by radio frequency reactive magnetron co-sputtering of Zn and GaAs has been carried out toward the realization of n-GZO/p-Si heterojunction diodes. X-ray diffraction and X-ray photoelec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bbc98822f79fe87bf783ddc912d43f1
https://doi.org/10.1007/s10854-020-05169-7
https://doi.org/10.1007/s10854-020-05169-7
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:19836-19845
The emerging field of flexible electronics demands low-temperature, high-throughput solution-processable thin films of oxide semiconductors. Towards this goal, we report a novel low-temperature synthesis route that is primarily in a combination of so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63f62915a73cc9f923597cfe3cec3498
https://doi.org/10.1007/s10854-020-04507-z
https://doi.org/10.1007/s10854-020-04507-z
Publikováno v:
RSC advances. 11(32)
The effect of thickness of Ga doped ZnO (GZO) layer on the performance of GZO/p-Si heterojunctions fabricated by reactive co-sputtering of Zn–GaAs target is investigated. GZO films were deposited at 375 °C with 0.5% GaAs area coverage of Zn target
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0e4d91e933bd746adfa0894861fbd3c7
https://pubmed.ncbi.nlm.nih.gov/35479208
https://pubmed.ncbi.nlm.nih.gov/35479208
Publikováno v:
DAE SOLID STATE PHYSICS SYMPOSIUM 2019.
Single phase, epitaxial GaN films have been grown at 700 oC on c-sapphire by rf magnetron sputtering using a GaAs target, with 100 % and 10 % N2 in Ar-N2 atmosphere. High resolution XRD measurements reveal significant differences in the strain presen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba0f5bfe91475372b04084f4cd7f0a35
https://doi.org/10.1063/5.0016598
https://doi.org/10.1063/5.0016598
Publikováno v:
Journal of Physics and Chemistry of Solids. 118:158-165
The modified Langmuir-Blodgett (MLB) technique has been improvised and extended to transfer GO-Cu2O nanocomposite monolayer sheets, by introducing Cu2+ ions into the subphase at room temperature. Morphological studies of as-transferred sheets reveale
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22c05da65f220e3a20185c6dba4c7e0d
https://doi.org/10.1016/j.jpcs.2018.03.012
https://doi.org/10.1016/j.jpcs.2018.03.012
Publikováno v:
INTERNATIONAL JOURNAL OF PLANT SCIENCES. 13:51-54
The present investigation on path analysis studies for quantitative traits in sesame ( Sesamum indicum L.) was undertaken at experimental farm of AICRP on Safflower, Vasantrao Naik Marathwada Krishi Vidyapeeth, Parbhani, Maharashtra. The experimental
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::045e16abcac216d68c3818d2a18d0899
https://doi.org/10.15740/has/ijps/13.1/51-54
https://doi.org/10.15740/has/ijps/13.1/51-54
Publikováno v:
Journal of Applied Physics. 129:095104
Optically transparent and conducting Cu-incorporated NiO thin films are deposited by low-temperature plasma-assisted solution combustion synthesis. The hole conductivity, crystallographic nature, and the film morphology in this semiconductor highly d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1a313f032eac874b34ea359341acf7b
https://doi.org/10.1063/5.0036015
https://doi.org/10.1063/5.0036015
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. 243:146953
Energy level alignment at the interface of ZnO with monolayer sheets of graphene oxide (GO), reduced graphene oxide (RGO), and simultaneously reduced and doped graphene oxide by ammonia plasma treatment (APGO) have been investigated using the photoel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6747726f5ba7bc23bcb3a59d676d64f
https://doi.org/10.1016/j.elspec.2020.146953
https://doi.org/10.1016/j.elspec.2020.146953
Autor:
Debnath Bhattacharyya, Ashok Kumar Yadav, S.S. Major, Shravan K. Appani, S. N. Jha, D. S. Sutar
Publikováno v:
Thin Solid Films. 701:137966
Ga-doped ZnO (GZO) films were grown by reactive co-sputtering of a Zn-GaAs target (3% area coverage of Zn by GaAs) at 375 °C with different partial pressures of oxygen. The resistivity of GZO films increases drastically from ≲10−3 Ω-cm to ~ 0.2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::896a799d4caf673405a241f894ea7d81
https://doi.org/10.1016/j.tsf.2020.137966
https://doi.org/10.1016/j.tsf.2020.137966
Publikováno v:
Semiconductor Science and Technology. 35:045011
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5d2bff618f6062471b06c07d03e463b
https://doi.org/10.1088/1361-6641/ab73ec
https://doi.org/10.1088/1361-6641/ab73ec