Zobrazeno 1 - 10
of 15
pro vyhledávání: '"D. S. Poloskin"'
Autor:
E. I. Shabunina, A. E. Chernyakov, A. E. Ivanov, A. P. Kartashova, V. I. Kuchinsky, D. S. Poloskin, N. A. Talnishnikh, N. M. Shmidt, A. L. Zakgeim
Publikováno v:
Journal of Applied Spectroscopy. 90:24-28
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10834a1fa83cc5fcd21ec70842d4d015
https://doi.org/10.1007/s10812-023-01497-8
https://doi.org/10.1007/s10812-023-01497-8
Publikováno v:
Semiconductors. 54:46-54
Annealing processes of vacancy-impurity atom pairs in moderately doped n-type silicon grown by the floating-zone technique and subjected to 0.9 MeV electron irradiation are investigated by means of Hall effect and conductivity measurements taking ove
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21289af4e989b4fba07e7decdfd74545
https://doi.org/10.1134/s1063782620010078
https://doi.org/10.1134/s1063782620010078
Publikováno v:
Semiconductors. 52:1677-1685
A comparative study of interactions of shallow impurities with primary defects in oxygen- and carbon-lean moderately doped Si and Ge subjected to irradiation with 0.9 MeV electrons, 60Co gamma-rays, and 15 MeV protons at room temperature is presented
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81c1d56fd207f2b650d4d8d95a8e4b7b
https://doi.org/10.1134/s1063782618130249
https://doi.org/10.1134/s1063782618130249
Publikováno v:
Semiconductors. 52:1051-1055
Radiation stability of the nanoporous silicon under gamma irradiation was investigated. Changes in the properties of porous silicon under gamma irradiation were registered by measurements of photoluminescence spectra and Fourier-transform infrared (F
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04fc3019069d474f7d7e62ff275b8858
https://doi.org/10.1134/s1063782618080067
https://doi.org/10.1134/s1063782618080067
Autor:
D. S. Poloskin, Anton E. Chernyakov, E. V. Gushchina, V. V. Emtsev, E. I. Shabunina, Vitali V. Kozlovski, A. P. Kartashova, A. G. Oganesyan, A. A. Zybin, Alexander Usikov, V. V. Lundin, A. V. Saharov, V. N. Petrov, N. A. Tal'nishnih, N. M. Shmidt, M. F. Kudoyarov
Publikováno v:
Semiconductors. 52:942-949
A fractal-percolation system that includes extended defects and random fluctuations in the alloy composition is formed during the growth of device structures based on Group-III nitrides. It is established that the specific features of this system are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7b3df94136cd115b6621486d6611c89
https://doi.org/10.1134/s1063782618070072
https://doi.org/10.1134/s1063782618070072
Publikováno v:
Technical Physics. 62:1684-1688
To increase the maximum power current density of an integrated n+p'Nn'p+-type thyristor during switching-off by a current pulse in the control circuit, the injection of electrons from the n+ emitter should be interrupted before the recovery of the co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee7729e9c9ec5f1c4f261e8f69452962
https://doi.org/10.1134/s1063784217110111
https://doi.org/10.1134/s1063784217110111
Autor:
D. S. Gets, D. S. Poloskin
Publikováno v:
Instruments and Experimental Techniques. 60:114-118
A method for measuring the Hall effect in the slow-temperature-drift mode is described. The proposed technique allows measurements of the electrical characteristics of semiconductor materials in a wide temperature range without the necessity to stabi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7b1ec731311cd7dcc3da977be473adc
https://doi.org/10.1134/s0020441217010195
https://doi.org/10.1134/s0020441217010195
Autor:
V. V. Ratnikov, A. N. Titkov, A G Kolmakov, M S Dunaevsky, E.E. Zavarin, N M Shmidt, V V Emtsev, A S Kryzhanovsky, A S Usikov, D S Poloskin, W V Lundin
Publikováno v:
Microscopy of Semiconducting Materials 2001 ISBN: 9781351074629
Microscopy of Semiconducting Materials 2001
Microscopy of Semiconducting Materials 2001
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fe6aea37963a2445ece8d51ddf0b3fe
https://doi.org/10.1201/9781351074629-72
https://doi.org/10.1201/9781351074629-72
Publikováno v:
JETP Letters. 85:169-173
In highly doped uncompensated layers of p-GaAs/AlGaAs quantum wells, activation conduction with low activation energies is observed at low temperatures and this conduction is not explained by known mechanisms (e4 conduction). Such behavior is attribu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05e22235410b8c1da760d9acbc4c2530
https://doi.org/10.1134/s0021364007030083
https://doi.org/10.1134/s0021364007030083
Autor:
E. M. Verbitskaya, T. O. Niinikoski, V. Eremin, M. P. Vlasenko, Leonid S. Vlasenko, D. S. Poloskin, R. Laiho
Publikováno v:
Journal of Applied Physics. 93:9659-9664
Spin-dependent recombination (SDR) electron paramagnetic resonance (EPR) spectroscopy is applied for investigation of paramagnetic recombination centers in irradiated silicon p−n junction detectors (diodes) formed on float-zone (FZ) silicon wafers.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::516f5fd7ea79bf8e7678b2c3b5e93c99
https://doi.org/10.1063/1.1576488
https://doi.org/10.1063/1.1576488