Výsledky vyhledávání - "D. S. Milakhin"

Growth of Nitride Heteroepitaxial Transistor Structures: from Epitaxy of Buffer Layers to Surface Passivation

Autor: Timur V. Malin, K. S. Zhuravlev, A. S. Kozhukhov, I. D. Loshkarev, D. S. Milakhin, Vladimir G. Mansurov, D. Yu. Protasov

Publikováno v: Optoelectronics, Instrumentation and Data Processing. 56:485-491

It is demonstrated that it is possible to use the ammonia molecular beam epitaxy for growing structurally perfect high-ohmic GaN layers which allow generating SiN/Al(Ga)N/GaN heterostructures for transistors with a high mobility of electrons. The gro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::db954545cfde49717e03aac5040d43b8
https://doi.org/10.3103/s8756699020050064

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Forming the GaN Nanocrystals on the Graphene-Like g-AlN and g-Si3N3 Surface

Autor: D. S. Milakhin, Timur V. Malin, K. S. Zhuravlev, N. V. Rzheutski, Yu. G. Galitsyn, E. V. Lebiadok, E. A. Razumets, I. A. Aleksandrov, Vladimir G. Mansurov, A. S. Kozhukhov

Publikováno v: Physics of the Solid State. 61:2329-2334

The formation of GaN nanocrystals on the graphene-like AlN (g-AlN) modification and graphene-like (g-Si3N3) silicon nitride by ammonia molecular beam epitaxy has been investigated. It has been found that the GaN growth on the g-Si3N3 surface leads to

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ad2eae640e55adda838d002370999278
https://doi.org/10.1134/s1063783419120308

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Influence of the Elemental Composition on the Surface of the GaN Layer on the Surface Energy in Ammonia MBE

Autor: Timur V. Malin, Vladimir G. Mansurov, D. S. Milakhin, K. S. Zhuravlev, Yan E. Maidebura

Publikováno v: 2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM).

The paper presents the results of a study of the effect of the elemental composition on the surface of the GaN layer on its surface energy. It was found for the first time that formation of GaN quantum dots on the AlN surface can occur with an increa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::30c7b8f7a00fbc852ec6af91a4c93078
https://doi.org/10.1109/edm52169.2021.9507711

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Growth of AlGaN:Si Heterostructures with Bragg Reflectors for the Blue-Green Spectral Range

Autor: K. S. Zhuravlev, I. V. Osinnykh, I. A. Aleksandrov, Timur V. Malin, D. S. Milakhin

Publikováno v: Optoelectronics, Instrumentation and Data Processing. 55:501-507

The paper presents the results of calculation and growth of AlGaN/AlN heteroepitaxial structures with Bragg reflectors for the blue-green spectral range corresponding to the maximum broadband luminescence of AlGaN:Si layers grown by molecular beam ep

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9518aaf5d1a075ddd3c266f02e94adac
https://doi.org/10.3103/s8756699019050133

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Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors

Autor: K. S. Zhuravlev, Vladimir G. Mansurov, D. Yu. Kazantsev, I. A. Aleksandrov, D. Yu. Protasov, A. A. Zaitsev, Timur V. Malin, A. S. Kozhukhov, D. S. Milakhin, B. Ya. Ber, V. E. Zemlyakov, V. I. Egorkin

Publikováno v: Technical Physics Letters. 45:761-764

It is shown that intentionally undoped high-resistance GaN buffer layers in AlGaN/GaN heterostructures with high electron mobility for transistors can be formed by ammonia molecular beam epitaxy. The GaN growth conditions have been optimized using ca

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bed7b9dd9ef39c285250204ff955909c
https://doi.org/10.1134/s1063785019080108

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Optimal Stage Determination of Sapphire Nitridation Process Completion under High-Energy Electron Beam Influence

Autor: Konstantin S. Zhuravlev, Timur V. Malin, Vladimir G. Mansurov, D. S. Milakhin, Yury Galitsyn

Publikováno v: 2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM).

In this work, using the RHEED technique, the optimal stage of sapphire nitridation completeness was determined taking into account the electron beam influence on a nitridation process. It was found that as a result of the sapphire surface nitridation

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fe9affbed5608817cb45e2087a5e474e
https://doi.org/10.1109/edm49804.2020.9153543

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Evolution of the atomic and electronic structures during nitridation of the Si(1 1 1) surface under ammonia flux

Autor: Vladimir G. Mansurov, Yury Galitsyn, S. A. Teys, D. S. Milakhin, Timur V. Malin, Konstantin Zhuravlev

Publikováno v: Applied Surface Science. 571:151276

Evolution of atomic and electronic structures during high temperature Si(1 1 1) surface nitridation under ammonia flux was studied in details by the STM/STS techniques. The adsorption and intermediate phases arising at low doses preceding the (8 × 8

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::15229bcfc75f334f3d427f908743d16a
https://doi.org/10.1016/j.apsusc.2021.151276

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Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers

Autor: Vladimir G. Mansurov, V. Yu. Davydov, K. S. Zhuravlev, A. S. Kozhuhov, D. S. Milakhin, Yu. G. Galitsyn, Alexander N. Smirnov, V. V. Ratnikov, Timur V. Malin

Publikováno v: Semiconductors. 52:789-796

The effect of atomic aluminum deposited onto sapphire substrates with different nitridation levels on the quality of AlN layers grown by ammonia molecular-beam epitaxy is investigated. The nitridation of sapphire with the formation of ~1 monolayer of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7ffef9e5f5c07a28ea4ecbfd85b69892
https://doi.org/10.1134/s1063782618060143

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Chemical kinetics and thermodynamics of the AlN crystalline phase formation on sapphire substrate in ammonia MBE

Autor: Yury Galitsyn, D. S. Milakhin, K. S. Zhuravlev, Vladimir G. Mansurov, Timur V. Malin

Publikováno v: Journal of Thermal Analysis and Calorimetry. 133:1099-1107

Chemical kinetics of a two-dimensional (2D) AlN layer formation on the (0001) sapphire (Al2O3) surface during nitridation as function of ammonia flux and temperature is investigated by reflection high-energy electron diffraction. The process on the s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fa50046c08738044f25cd4da07a19cd8
https://doi.org/10.1007/s10973-018-7116-z

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Analysis of the AlN phase transition on a sapphire surface within a universal 2D lattice gas model in MBE

Autor: Timur V. Malin, D. S. Milakhin, Yu. G. Galitsyn, K. S. Zhuravlev, Vladimir G. Mansurov

Publikováno v: Journal of Physics: Conference Series. 1851:012005

The AlN phase transition on the (0001) Al2O3 surface was investigated. It was experimentally estimated that the AlN formation rate as a function of temperature has a different character in two temperature regions. In the region of relatively low temp

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1e59b64c032dfc16614d678ff54ccd4f
https://doi.org/10.1088/1742-6596/1851/1/012005

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