Zobrazeno 1 - 10
of 17
pro vyhledávání: '"D. S. L. Mui"'
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 24:552-558
Wet chemical processes in integrated circuit (IC) manufacturing are used in many applications, e.g., post-etch residue removal and pre-deposition surface treatment. While advanced single-wafer wet spin tools are part of the critical tool-set for adva
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95bf45d4036c24ad889bc9fbdb6e70d1
https://doi.org/10.1109/tsm.2011.2162346
https://doi.org/10.1109/tsm.2011.2162346
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 24:104-116
Etching of SiO2 films using aqueous HF-based chemistries is widely used in integrated circuit and microelectromechanical device industries. To precisely control film loss during cleaning or etching processes, good control over the contact time betwee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::221afa752c42e5d3b26d938bd1536643
https://doi.org/10.1109/tsm.2010.2085457
https://doi.org/10.1109/tsm.2010.2085457
Publikováno v:
Journal of Crystal Growth. :393-397
We present the analysis of in-situ etched (using chlorine gas) and regrown AlInAs-GaInAs interfaces and the dependence of interface quality on etching temperature. Compared to GaAs-based materials, chlorine gas etching of In containing semiconductors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8f0129bb17619fa1422f8e418b81d9f
https://doi.org/10.1016/s0022-0248(96)00934-7
https://doi.org/10.1016/s0022-0248(96)00934-7
Publikováno v:
Journal of Applied Physics. 72:553-558
We have investigated the effects due to the capture of tunneling electrons by interface traps to the measured capacitance, Cm, and equivalent series resistance, Rm, of insulator‐semiconductor interfaces in metal‐insulator‐semiconductor (MIS) ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c267aee1a06a44eef15692cbf9c86d6
https://doi.org/10.1063/1.351887
https://doi.org/10.1063/1.351887
Publikováno v:
2003 5th International Conference on ASIC. Proceedings (IEEE Cat. No.03TH8690).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a9198b2b061218f74812bd3ffc92534
https://doi.org/10.1109/issm.2003.1243308
https://doi.org/10.1109/issm.2003.1243308
Publikováno v:
Journal of Applied Physics. 77:6244-6246
A new technology for self‐aligned Si‐Zn diffusion into GaAs and AlGaAs is described. In this technology, closed‐tube Si diffusion is obtained from a sputtered SiNx film, and Zn diffusion self‐aligned to the Si diffusion window is obtained by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b61dae642db4672fcc6f83852006e8e4
https://doi.org/10.1063/1.359155
https://doi.org/10.1063/1.359155
Publikováno v:
Applied Physics Letters. 66:1966-1968
We report the use of low damage dry etching and in situ molecular beam epitaxial (MBE) regrowth in creating high‐quality regrown interfaces. By fabricating buried, etched ridge InGaAs/GaAs lasers, we are able to measure the interface recombination
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fe4215963aab768382600587dd6b0ce
https://doi.org/10.1063/1.113292
https://doi.org/10.1063/1.113292
Publikováno v:
Applied Physics Letters. 66:1620-1622
We utilize the sensitivity of the two‐ to three‐dimensional growth transition of InAs self‐assembled islands on InAs coverage to demonstrate the growth of self‐aligned InAs islands on etched GaAs ridges by molecular beam epitaxy. The differen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b66f24f6630ae97dccb6318821910139
https://doi.org/10.1063/1.113871
https://doi.org/10.1063/1.113871
Publikováno v:
Applied Physics Letters. 62:3291-3293
We report on the electrical characteristics of in situ deposited Si3N4/Si/In0.53Ga0.47As depletion‐mode metal‐insulator‐semiconductor field‐effect transistors (MISFETs). MISFETs with 2.2‐μm gate lengths fabricated by a self‐aligned gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae83882964b47ccc69d2311cf9cbc32f
https://doi.org/10.1063/1.109075
https://doi.org/10.1063/1.109075
Publikováno v:
Applied Physics Letters. 61:1826-1828
In this letter, we report on gate quality Si3N4/Si/n‐In0.53Ga0.47As capacitors representing significant improvement over that which has been previously obtained. These capacitors are formed by in situ nitride and Si layer deposition on as‐grown m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83b983dddde4d2b944ec0335826d66ba
https://doi.org/10.1063/1.108387
https://doi.org/10.1063/1.108387