Zobrazeno 1 - 10
of 14
pro vyhledávání: '"D. S. L. Mui"'
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 24:552-558
Wet chemical processes in integrated circuit (IC) manufacturing are used in many applications, e.g., post-etch residue removal and pre-deposition surface treatment. While advanced single-wafer wet spin tools are part of the critical tool-set for adva
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 24:104-116
Etching of SiO2 films using aqueous HF-based chemistries is widely used in integrated circuit and microelectromechanical device industries. To precisely control film loss during cleaning or etching processes, good control over the contact time betwee
Publikováno v:
Journal of Crystal Growth. :393-397
We present the analysis of in-situ etched (using chlorine gas) and regrown AlInAs-GaInAs interfaces and the dependence of interface quality on etching temperature. Compared to GaAs-based materials, chlorine gas etching of In containing semiconductors
Publikováno v:
2003 5th International Conference on ASIC. Proceedings (IEEE Cat. No.03TH8690).
Publikováno v:
Journal of Applied Physics. 77:6244-6246
A new technology for self‐aligned Si‐Zn diffusion into GaAs and AlGaAs is described. In this technology, closed‐tube Si diffusion is obtained from a sputtered SiNx film, and Zn diffusion self‐aligned to the Si diffusion window is obtained by
Publikováno v:
Applied Physics Letters. 66:1966-1968
We report the use of low damage dry etching and in situ molecular beam epitaxial (MBE) regrowth in creating high‐quality regrown interfaces. By fabricating buried, etched ridge InGaAs/GaAs lasers, we are able to measure the interface recombination
Publikováno v:
Applied Physics Letters. 66:1620-1622
We utilize the sensitivity of the two‐ to three‐dimensional growth transition of InAs self‐assembled islands on InAs coverage to demonstrate the growth of self‐aligned InAs islands on etched GaAs ridges by molecular beam epitaxy. The differen
Publikováno v:
Applied Physics Letters. 62:3291-3293
We report on the electrical characteristics of in situ deposited Si3N4/Si/In0.53Ga0.47As depletion‐mode metal‐insulator‐semiconductor field‐effect transistors (MISFETs). MISFETs with 2.2‐μm gate lengths fabricated by a self‐aligned gate
Publikováno v:
Applied Physics Letters. 61:1826-1828
In this letter, we report on gate quality Si3N4/Si/n‐In0.53Ga0.47As capacitors representing significant improvement over that which has been previously obtained. These capacitors are formed by in situ nitride and Si layer deposition on as‐grown m
Publikováno v:
Applied Physics Letters. 59:2847-2849
We report on the electrical characteristics of an as‐grown Si3N4/Si/n‐GaAs metal‐insulator‐semiconductor capacitors. The GaAs layer is grown by molecular beam epitaxy and both the Si3N4 and the 10 A Si layers are deposited using silane in a v