Zobrazeno 1 - 10
of 143
pro vyhledávání: '"D. S. Katzer"'
Autor:
Thomas O. McConkie, Lin Zhou, David F. Storm, Brian P. Downey, David J. Meyer, D. S. Katzer, Matthew T. Hardy, David J. Smith, Neeraj Nepal
Publikováno v:
Journal of Crystal Growth. 456:121-132
While the heteroepitaxial growth of gallium nitride-based materials and devices on substrates such as SiC, sapphire, and Si has been well-documented, the lack of a cost-effective source of bulk GaN crystals has hindered similar progress on homoepitax
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b74aa0b0ac5d50519a193a629e6c002
https://doi.org/10.1016/j.jcrysgro.2016.08.047
https://doi.org/10.1016/j.jcrysgro.2016.08.047
Autor:
Neeraj Nepal, Andrew C. Lang, D. S. Katzer, David J. Meyer, Brian P. Downey, Eric N. Jin, Matthew T. Hardy, David F. Storm
Publikováno v:
Journal of Applied Physics. 127:214104
We demonstrate the epitaxial growth of (111)-oriented Sr1 − xCaxTiO3 (SCTO) thin films on (0002) GaN using a thin (100) TiO2 buffer layer by RF-plasma-assisted oxide molecular beam epitaxy. We explore the growth window of SCTO for both x = 0 (i.e.,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bbbfbfb14ed94d4ceabca525a883dcf
https://doi.org/10.1063/5.0007144
https://doi.org/10.1063/5.0007144
Publikováno v:
Journal of Vacuum Science & Technology B. 38:032204
Noncontact band edge thermometry based on diffuse reflectance was used to monitor and control the substrate temperature rise during the MBE growth of niobium nitride transition metal nitrides on transparent, wide-bandgap silicon carbide substrates. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce62f22aa86c0ff8d1c795b0da03d1e1
https://doi.org/10.1116/6.0000063
https://doi.org/10.1116/6.0000063
Autor:
David F. Storm, David J. Meyer, D. S. Katzer, Matthew T. Hardy, Neeraj Nepal, Brian P. Downey
Publikováno v:
Journal of Crystal Growth. 425:119-124
N-polar InAlN thin films were grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates under N-rich conditions. Indium and aluminum fluxes were varied independently at substrate temperatures below and above the onset of thermal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b321f03d9dd6b17af358acd978d3b09c
https://doi.org/10.1016/j.jcrysgro.2015.02.045
https://doi.org/10.1016/j.jcrysgro.2015.02.045
Publikováno v:
Solid-State Electronics. 106:12-17
The effect of SiN x thickness on device characteristics such as threshold voltage, carrier density, and carrier mobility have been determined for a metal–organic chemical-vapor-deposition grown In 0.17 Al 0.83 N/AlN/GaN structure with an ultra-thin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c3971e67f08ea23f94ccc745e81d04c
https://doi.org/10.1016/j.sse.2014.12.025
https://doi.org/10.1016/j.sse.2014.12.025
Publikováno v:
Solid-State Electronics. 86:17-21
The Schottky barrier heights of several metals (Cu, Au, Pd, Ni, and Pt) to N-polar GaN were extracted using current–voltage and capacitance–voltage measurements. The dependence of barrier height on metal was found to vary linearly with the electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a445e07e3f07d621be814accd226acbc
https://doi.org/10.1016/j.sse.2013.04.002
https://doi.org/10.1016/j.sse.2013.04.002
Comparison of microstructure of N-polar GaN/AlGaN/GaN heterostructures grown on different substrates
Publikováno v:
Journal of Crystal Growth. 357:25-29
Several N-polar GaN/AlGaN/GaN heterostructures intended for high electron mobility transistor (HEMT) devices were grown by molecular beam epitaxy using either SiC or freestanding GaN substrates. The microstructure of these heterostructures has been c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ab03beae08402c71b3126c78e673d93
https://doi.org/10.1016/j.jcrysgro.2012.06.035
https://doi.org/10.1016/j.jcrysgro.2012.06.035
Autor:
David F. Storm, D. S. Katzer, Theodosia Gougousi, David J. Meyer, David A. Deen, Steven C. Binari
Publikováno v:
physica status solidi (a). 208:1630-1633
In this paper, we present the first demonstration of a HfO 2 -insulated gate N-polar GaN inverted high-electron-mobility transistor (iHEMT). HfO 2 -insulated gate devices showed an order of magnitude improvement in reverse-bias gate leakage current a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::799922e6c978e66c1d254fbe8ff7c972
https://doi.org/10.1002/pssa.201001080
https://doi.org/10.1002/pssa.201001080
Autor:
David J. Meyer, Edward A. Preble, Keith R. Evans, David F. Storm, Tanja Paskova, J.A. Roussos, D. S. Katzer, David A. Deen, Steven C. Binari, Robert Bass
Publikováno v:
Solid-State Electronics. 54:1470-1473
AlGaN/GaN/Be:GaN heterostructures have been grown by rf-plasma molecular beam epitaxy on freestanding semi-insulating GaN substrates, employing unintentionally-doped (UID) GaN buffer layers with thicknesses, d(sub UID), varying between 50 nm and 500
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34b7f73417eb00d2e232092e28f7d0e4
https://doi.org/10.1016/j.sse.2010.05.041
https://doi.org/10.1016/j.sse.2010.05.041
Autor:
Edward A. Preble, J.A. Roussos, Steven C. Binari, J.A. Mittereder, David J. Smith, Lin Zhou, D. S. Katzer, Keith R. Evans, Drew Hanser, David F. Storm, Robert Bass
Publikováno v:
Journal of Crystal Growth. 305:340-345
We report on the structural and electrical properties of AlGaN/GaN heterostructures grown by molecular beam epitaxy on low-dislocation-density, free standing GaN substrates grown by hydride vapor phase epitaxy. Structural characterization by atomic f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec90a65a469d7b3300184b21dfd0a13f
https://doi.org/10.1016/j.jcrysgro.2007.04.003
https://doi.org/10.1016/j.jcrysgro.2007.04.003