Zobrazeno 1 - 10
of 155
pro vyhledávání: '"D. S. Katzer"'
Autor:
Thomas O. McConkie, Lin Zhou, David F. Storm, Brian P. Downey, David J. Meyer, D. S. Katzer, Matthew T. Hardy, David J. Smith, Neeraj Nepal
Publikováno v:
Journal of Crystal Growth. 456:121-132
While the heteroepitaxial growth of gallium nitride-based materials and devices on substrates such as SiC, sapphire, and Si has been well-documented, the lack of a cost-effective source of bulk GaN crystals has hindered similar progress on homoepitax
Autor:
Neeraj Nepal, Andrew C. Lang, D. S. Katzer, David J. Meyer, Brian P. Downey, Eric N. Jin, Matthew T. Hardy, David F. Storm
Publikováno v:
Journal of Applied Physics. 127:214104
We demonstrate the epitaxial growth of (111)-oriented Sr1 − xCaxTiO3 (SCTO) thin films on (0002) GaN using a thin (100) TiO2 buffer layer by RF-plasma-assisted oxide molecular beam epitaxy. We explore the growth window of SCTO for both x = 0 (i.e.,
Publikováno v:
Journal of Vacuum Science & Technology B. 38:032204
Noncontact band edge thermometry based on diffuse reflectance was used to monitor and control the substrate temperature rise during the MBE growth of niobium nitride transition metal nitrides on transparent, wide-bandgap silicon carbide substrates. T
Autor:
David F. Storm, David J. Meyer, D. S. Katzer, Matthew T. Hardy, Neeraj Nepal, Brian P. Downey
Publikováno v:
Journal of Crystal Growth. 425:119-124
N-polar InAlN thin films were grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates under N-rich conditions. Indium and aluminum fluxes were varied independently at substrate temperatures below and above the onset of thermal
Publikováno v:
Solid-State Electronics. 106:12-17
The effect of SiN x thickness on device characteristics such as threshold voltage, carrier density, and carrier mobility have been determined for a metal–organic chemical-vapor-deposition grown In 0.17 Al 0.83 N/AlN/GaN structure with an ultra-thin
Autor:
D. S. Katzer, David F. Storm, David J. Meyer, Brian P. Downey, Thomas O. McConkie, David J. Smith, Matthew T. Hardy
Publikováno v:
Journal of Crystal Growth. 409:14-17
We have investigated the microstructure of homoepitaxial N-polar GaN layers grown by rf-plasma-assisted molecular beam epitaxy on freestanding GaN substrates. The structural quality of the epitaxial layers improves when the sheet density of oxygen pr
Autor:
Steven C. Binari, Edward A. Preble, Keith R. Evans, Tanja Paskova, D. S. Katzer, David J. Meyer, Theodosia Gougousi, David F. Storm, David J. Smith, David A. Deen
Publikováno v:
Journal of Crystal Growth. 380:14-17
We report the structural and electrical properties of ultrathin-barrier AlN/GaN heterostructures grown on freestanding GaN substrates by rf plasma-assisted molecular beam epitaxy. Structures with barrier thicknesses between 1.5 nm and 7.5 nm were gro
Publikováno v:
Solid-State Electronics. 86:17-21
The Schottky barrier heights of several metals (Cu, Au, Pd, Ni, and Pt) to N-polar GaN were extracted using current–voltage and capacitance–voltage measurements. The dependence of barrier height on metal was found to vary linearly with the electr
Comparison of microstructure of N-polar GaN/AlGaN/GaN heterostructures grown on different substrates
Publikováno v:
Journal of Crystal Growth. 357:25-29
Several N-polar GaN/AlGaN/GaN heterostructures intended for high electron mobility transistor (HEMT) devices were grown by molecular beam epitaxy using either SiC or freestanding GaN substrates. The microstructure of these heterostructures has been c
Autor:
David F. Storm, D. S. Katzer, Theodosia Gougousi, David J. Meyer, David A. Deen, Steven C. Binari
Publikováno v:
physica status solidi (a). 208:1630-1633
In this paper, we present the first demonstration of a HfO 2 -insulated gate N-polar GaN inverted high-electron-mobility transistor (iHEMT). HfO 2 -insulated gate devices showed an order of magnitude improvement in reverse-bias gate leakage current a