Zobrazeno 1 - 10
of 12
pro vyhledávání: '"D. S. Gaev"'
Publikováno v:
Optics and Spectroscopy. 130:23-27
Publikováno v:
Russian Microelectronics. 50:347-352
A physical and topological model of an integrated capacitor based on a Schottky barrier is proposed and numerically implemented. It is theoretically shown that by forming a volumetric functional structure of a capacitor, it is possible to achieve a s
Autor:
D. S. Gaev, S. Sh. Rekhviashvili
Publikováno v:
Russian Microelectronics. 49:411-415
The design of a single-chip shaper of impulses and signals of a special form is proposed. The operating principle of the device is based on the injection of charge carriers into the channel of a planar silicon structure from emitters located at diffe
Autor:
D. S. Gaev, S. Sh. Rekhviashvili
Publikováno v:
Russian Microelectronics. 49:210-213
The article studies a triode for vacuum microelectronics with horizontal geometry (planar triode). A simple theoretical model of the device is proposed and the minimum cutoff voltage is calculated. Experiments are carried out on the fundamental model
Publikováno v:
Russian Microelectronics. 47:465-467
The potential for use of porous silicon in designing varicaps with high capacitance ratios satisfying the requirements of microelectronics and microsystems engineering is considered. The technique for the fabrication of capacitor structures via the e
Publikováno v:
Crystallography Reports. 58:365-369
Nanosized Sb2Se3 island films are prepared by the incongruent evaporation of Sb1 − xSex (x = 0.9 at fractions) thin films. The surface morphology of the structures is investigated by optical and atomic force microscopy (AFM). It is shown that an in
Publikováno v:
Inorganic Materials. 49:39-42
Controlled displacement of phase equilibria through the incongruent evaporation of Pb1 − xSex films has been used to grow PbSe nanoisland films. The effect of growth conditions on the island size distribution has been studied.
Publikováno v:
Crystallography Reports. 57:288-291
Island films based on the intermediate phases forming in Ge-Se and Sn-Se systems are prepared by the incongruent evaporation of film structures of a Sn1 − xSex composition. The surface morphology of these structures is studied by atomic force micro
Autor:
D. S. Gaev, S. Sh. Rekhviashvili
Publikováno v:
Semiconductors. 46:137-140
Crack formation in electrochemical porous silicon has been experimentally and theoretically studied. It is established that the kinetics of porous silicon cracking can be described by the S-shaped Weibull distribution. This feature appears to be of g
Publikováno v:
Inorganic Materials. 48:10-15
GaSb nanoisland films have been grown via incongruent evaporation of Ga1 − xSbx films, and their surface morphology has been studied by atomic force microscopy. The surface density and characteristic dimensions of the islands have been shown to dep