Zobrazeno 1 - 10
of 163
pro vyhledávání: '"D. Rouchon"'
Autor:
C. Laguna, M. Bernard, J. Garrione, F. Fillot, F. Aussenac, D. Rouchon, G. Lima, L. Militaru, A. Souifi, G. Navarro
Publikováno v:
Journal of Applied Physics. 133:074501
In this article, we present the structural investigation by Raman spectroscopy of GeSbSeN ovonic threshold switching (OTS) material once integrated in selector devices featuring a top electrode based on a transparent and conductive indium tin oxide l
Autor:
L. Prazakova, E. Nolot, E. Martinez, D. Rouchon, N. Rochat, C. Sabbione, J. Li, D. Eichert, G. Pepponi, M. Bernard, G. Navarro
Publikováno v:
Journal of Applied Physics. 132:205102
Nitrogen doping in chalcogenide materials represents a promising way for the improvement of material properties. Indeed, N doping in GeSbTe phase-change alloys have demonstrated to greatly enhance thermal stability of their amorphous phase, necessary
Autor:
D. Rouchon, A.N. Bugrov, Demid A. Kirilenko, C. Licitra, R. Yu. Smyslov, T. V. Khamova, A.Yu. Zavialova, Gennady P. Kopitsa
Publikováno v:
Nanosystems: Physics, Chemistry, Mathematics
Autor:
L. Casiez, N. Bernier, J. Chrétien, J. Richy, D. Rouchon, M. Bertrand, F. Mazen, M. Frauenrath, A. Chelnokov, J. M. Hartmann, V. Calvo, N. Pauc, V. Reboud, P. Acosta Alba
Publikováno v:
Journal of Applied Physics. 131:153103
We investigate the recrystallization of thick phosphorus-implanted GeSn layers using 308 nm Ultraviolet Nanosecond Laser Annealing (UV-NLA). We identify the optimal annealing conditions leading to the reconstruction of Ge0.92Sn0.08 crystal amorphized
Autor:
Jean-Pierre Majoral, Nadia Katir, D. Rouchon, Mosto Bousmina, Abdelkrim El Kadib, Anass Benayad, Nathalie Marcotte, Nabil El Brahmi
Publikováno v:
Nanoscale Advances
Nanoscale Advances, RSC, 2019, 1 (1), pp.314-321. ⟨10.1039/C8NA00047F⟩
Nanoscale Advances, 2019, 1 (1), pp.314-321. ⟨10.1039/C8NA00047F⟩
Nanoscale Advances, RSC, 2019, 1 (1), pp.314-321. ⟨10.1039/C8NA00047F⟩
Nanoscale Advances, 2019, 1 (1), pp.314-321. ⟨10.1039/C8NA00047F⟩
International audience; High content nitrogen, sulfur and phosphorus heteroatoms assembled in tree-like dendrimers (DGn) are confined within the galleries of two-dimensional graphene oxide (GO). The presence of the ternary diethyl-N-ethyl-ammonium gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bff2fec0b2fa150761e2d91dca3d55f4
https://hal.archives-ouvertes.fr/hal-02341361
https://hal.archives-ouvertes.fr/hal-02341361
Evidence for Charge Transfer at the Interface between Hybrid Phosphomolybdate and Epitaxial Graphene
Autor:
Anass Benayad, Loïc Huder, Mira Baraket, Lionel Dubois, Guillaume Izzet, Louis Jansen, Anna Proust, Florence Duclairoir, Felipe Lipp-Bregolin, Corentin Rinfray, D. Rouchon, Gérard Lapertot
Publikováno v:
Langmuir
Langmuir, American Chemical Society, 2016, 32 (19), pp.4774--4783. ⟨10.1021/acs.langmuir.6b00870⟩
Langmuir, 2016, 32 (19), pp.4774--4783. ⟨10.1021/acs.langmuir.6b00870⟩
Langmuir, American Chemical Society, 2016, 32 (19), pp.4774--4783. ⟨10.1021/acs.langmuir.6b00870⟩
Langmuir, 2016, 32 (19), pp.4774--4783. ⟨10.1021/acs.langmuir.6b00870⟩
The interfacing of polyoxometalates and graphene can be considered to be an innovative way to generate hybrid structures that take advantage of the properties of both components. Polyoxometalates are redox-sensitive and photosensitive compounds with
Publikováno v:
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.
Autor:
Mathieu Bertrand, H. Sigg, Q. M. Thai, J. Aubin, V. Reboud, T. Zabel, D. Rouchon, A. Chelnokov, J. Rothman, Alban Gassenq, L. Milord, F. Armand Pilon, J.M. Hartmann, Kevin Guilloy, V. Calvo, Nicolas Pauc
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2017, 111 (9), pp.092101. ⟨10.1063/1.5000353⟩
Applied Physics Letters, 2017, 111 (9), pp.092101. ⟨10.1063/1.5000353⟩
Applied Physics Letters, American Institute of Physics, 2017, 111 (9), pp.092101. ⟨10.1063/1.5000353⟩
Applied Physics Letters, 2017, 111 (9), pp.092101. ⟨10.1063/1.5000353⟩
Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase at 2.5 um
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c879233fca76d4029e1c5e5252f1eb06
https://hal.archives-ouvertes.fr/hal-02060100
https://hal.archives-ouvertes.fr/hal-02060100
Autor:
J.M. Hartmann, T. Zabel, Ivan Duchemin, A. Chelnokov, Jérôme Faist, Yann-Michel Niquet, Hans Sigg, François Rieutord, Kevin Guilloy, J. Rothman, Alban Gassenq, J. Widiez, D. Rouchon, Samuel Tardif, V. Reboud, Mathieu Bertrand, Nicolas Pauc, V. Calvo
Publikováno v:
SILICON PHOTONICS XII
SILICON PHOTONICS XII, Jan 2017, SAN FRANCISCO, United States. ⟨10.1117/12.2251790⟩
SILICON PHOTONICS XII, Jan 2017, SAN FRANCISCO, United States. ⟨10.1117/12.2251790⟩
The realization of efficient laser sources compatible with the microelectronics industry is currently one of the main challenges for silicon photonics. As Ge is CMOS compatible, the interest of using tensile strain or n-type doping to improve its lig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c426fc51aa4db8ffcaa928960e433f8
https://hal.univ-grenoble-alpes.fr/hal-01974439
https://hal.univ-grenoble-alpes.fr/hal-01974439
Autor:
J.M. Hartmann, A. Chelnokov, J. Rothman, D. Rouchon, Kevin Guilloy, V. Reboud, J. Aubin, Alban Gassenq, L. Milord, Nicolas Pauc, V. Calvo
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2017, 110 (11), pp.112101. ⟨10.1063/1.4978512⟩
Applied Physics Letters, 2017, 110 (11), pp.112101. ⟨10.1063/1.4978512⟩
Applied Physics Letters, American Institute of Physics, 2017, 110 (11), pp.112101. ⟨10.1063/1.4978512⟩
Applied Physics Letters, 2017, 110 (11), pp.112101. ⟨10.1063/1.4978512⟩
GeSn alloys are the subject of intense research activities as these group IV semiconductors present direct bandgap behaviors for high Sn contents. Today, the control of strain becomes an important challenge to improve GeSn devices. Strain micro-measu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::262c421fae96a9c0c7666edae7be624a
http://arxiv.org/abs/1701.03788
http://arxiv.org/abs/1701.03788