Zobrazeno 1 - 10 of 31 pro vyhledávání: '"D. R. Stone"'
1
Photoreflectance study of resonant asymmetric double quantum wells with Si δ-doping in side barriers
Autor: R. A. Wilson, Chien-Rong Lu, D. R. Stone, S. K. Du, J. R. Anderson
Publikováno v: Applied Surface Science. 92:543-546
The electro-optical properties of GaAs Al 0.3 Ga 0.7 As resonant asymmetric double quantum wells with Si δ-doping in side barriers have been investigated by photoreflectance spectroscopy from 20 K to room temperature. The modulated reflectance spect
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::815278d537f86fb51ce26d7f1961a93b
https://doi.org/10.1016/0169-4332(95)00292-8
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2
Study of the internal electric fields across the interfaces in the microstructures
Autor: C. L. Chang, R. A. Wilson, J. R. Anderson, D. R. Stone, C. H. Liou, Chien-Rong Lu
Publikováno v: Applied Surface Science. 92:404-407
The electro-optical properties of MBE grown selectively doped GaAs Al 0.3 Ga 0.7 As heterostructures have been studied by photoreflectance spectroscopy. The spectra contained three types of oscillations in different spectra regions. The origins of di
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ae15f684f9c9edb4a88cf6453ab0a206
https://doi.org/10.1016/0169-4332(95)00265-0
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3
A tunneling field-effect transistor with 25 nm metallurgical channel length
Autor: M. J. Yang, C. H. Yang, Brian R. Bennett, Fu-Cheng Wang, W. E. Zhang, R. A. Wilson, D. R. Stone
Publikováno v: Applied Physics Letters. 70:3005-3007
A tunneling field-effect transistor with an ultrashort channel-length of 25 nm has been experimentally realized using InAs/AlSb heterostructures. The conduction between the source and the drain is through a sequential process, including tunneling and
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::603d9749bb338ec3b5952a861025d8d7
https://doi.org/10.1063/1.118731
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4
Photoreflectance study of the internal electric fields at the n-type GaAs surface and across the n-type GaAs/substrate interface
Autor: J. R. Anderson, D. R. Stone, W. T. Beard, R. A. Wilson, Chien-Rong Lu
Publikováno v: Superlattices and Microstructures. 8:155-157
Photoreflectance (PR) experiments have been performed from 4.2 K to 300 K to study the temperature dependence of the internal electric fields in MBE grown n-type GaAs with various doping profiles. Franz-Keldysh oscillations (FKO) were observed in the
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::036c570bce2e3cea9884c13b8ddf9dec
https://doi.org/10.1016/0749-6036(90)90081-h
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5
Necrotizing fasciitis. The changing spectrum
Autor: D R, Stone, S L, Gorbach
Publikováno v: Dermatologic clinics. 15(2)
Necrotizing fasciitis, by nature of its high inoculum of aggressive bacteria and the depth of the fascial involvement, is one of the most serious infections known to humans. Rapid tissue destruction of skin and fascia, along with bacteremia, is commo
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::4e2caf2570260fbad72c94dd98a25454
https://pubmed.ncbi.nlm.nih.gov/9098631
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6
Temperature and doping-concentration dependence of the oscillatory properties of the photoreflectance spectra from GaAs grown by molecular-beam epitaxy
Autor: D. R. Stone, W. T. Beard, Steven L. Wright, Thomas F. Kuech, Chien-Rong Lu, R. A. Wilson, J. R. Anderson
Publikováno v: Physical review. B, Condensed matter. 43(14)
The temperature and doping-concentration dependence of the oscillatory properties in the photoreflectance (PR) spectra of GaAs grown by molecular-beam epitaxy has been studied in detail. The peak separation of the oscillatory part of the PR spectrum
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::45162109c51ea0449b965b1d271d19be
https://pubmed.ncbi.nlm.nih.gov/9996951
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7
Nineteenth-Century Lives. Essays Presented to Jerome Hamilton Buckley
Autor: D. R. Stone, David Staines, Laurence S. Lockridge, Jerome Hamilton Buckley, John Maynard
Publikováno v: Modern Language Studies. 21:104
Jerome Hamilton Buckley Preface Acknowledgments 1. Biographobia: some personal reflections on the act of biography Margaret Atwood 2. Shaping life in The Prelude Carl Woodring 3. Writing the life of J. J. Ridley Richard D. Altick 4. Charles Dickens:
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::65f3fac2fecf14123656fa46fb157159
https://doi.org/10.2307/3195123
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10
Transverse magnetoresistance and Hall effect in wide‐gap, p‐type Hg1−xMnxTe
Autor: J. R. Anderson, D. R. Stone, W. B. Johnson
Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 1:1761-1764
A low frequency ac measuring‐current technique has been used to investigate the magnetoresistance and Hall effect in Hg1−xMnxTe over a temperature range from 2 to 300 K. The exchange interaction between the Mn++ ions and the band carriers causes
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7f349dd5e42b3831f2260e4314e521af
https://doi.org/10.1116/1.572211
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