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Autor:
Eric J. White, Russell T. Herrin, Christopher V. Jahnes, I. Vitomirov, Z.X. He, Dana Dereus, D. R. Miga, S. E. Luce, Shawn J. Cunningham, Art Morris, William J. Murphy, S. R. Dupuis, Jeffrey C. Maling, A. Gupta, A.K. Stamper
Publikováno v:
2011 16th International Solid-State Sensors, Actuators and Microsystems Conference.
MEMS capacitor switches have been integrated with high voltage CMOS ICs. The MEMS were formed with the final three AlCu wiring levels in SiO 2 using a planar sacrificial silicon cavity process. The MEMS cavities were hermetically sealed at less than