Zobrazeno 1 - 3
of 3
pro vyhledávání: '"D. R. Hughart"'
Autor:
B. Tolleson, C. Bennett, T. Patrick Xiao, D. Wilson, J. Short, J. Kim, D. R. Hughart, N. Gilbert, S. Agarwal, H.J. Barnaby, M.J. Marinella
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7809a028312ea777dee27c8c4333b584
https://doi.org/10.1109/irps48203.2023.10118139
https://doi.org/10.1109/irps48203.2023.10118139
Autor:
Elliot J. Fuller, M. J. Marinella, François Léonard, S. R. Ellis, Bolin Liao, A. Alec Talin, J. R. Michael, D. R. Hughart, D. Garland, K. C. Celio, Norman C. Bartelt, David Chandler
Publikováno v:
Physical Review B. 104
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::404e7cc3ef744c706cdae14adaaee8ef
https://doi.org/10.1103/physrevb.104.l161303
https://doi.org/10.1103/physrevb.104.l161303
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2013:000275-000280
Commercially available, 1200 V SiC power MOSFETs have been characterized under bias-temperature stress conditions. Two generations of devices from a single manufacturer were tested. For the first-generation MOSFETs, both plastic- and metal-packaged d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ee82e05dedd9b4ad5f411df6ac7c22a
https://doi.org/10.4071/hiten-wp11
https://doi.org/10.4071/hiten-wp11