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pro vyhledávání: '"D. R. Hinson"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 7:2549-2553
Intensity profiles along the specular streak of the reflection high‐energy electron diffraction (RHEED) pattern observed during GaAs growth by molecular‐beam epitaxy (MBE) show intensity peaks from diffuse scattering processes as well as the spec
Publikováno v:
Applied Physics Letters. 54:1675-1677
We discuss the photoluminescence (PL) properties of pseudomorphic modulation‐doped Al0.15Ga0.85As/In0.2Ga0.8As/GaAs quantum wells as a function of temperature. At 4.2 K, hole localization influences the PL linewidth; however, at higher temperatures