Výsledky vyhledávání - "D. R. Hinson"

Effects of Kikuchi scattering on reflection high‐energy electron diffraction intensities during molecular‐beam epitaxy GaAs growth

Autor: G. E. Crook, K. G. Eyink, A. C. Campbell, B. G. Streetman, D. R. Hinson

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 7:2549-2553

Intensity profiles along the specular streak of the reflection high‐energy electron diffraction (RHEED) pattern observed during GaAs growth by molecular‐beam epitaxy (MBE) show intensity peaks from diffuse scattering processes as well as the spec

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::470b8acd133ddf230b05f16d0baa1398
https://doi.org/10.1116/1.575795

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Photoluminescence studies of pseudomorphic modulation‐doped AlGaAs/InGaAs/GaAs quantum wells

Autor: Dean P. Neikirk, V. P. Kesan, Ben G. Streetman, D. R. Hinson, Ananth Dodabalapur

Publikováno v: Applied Physics Letters. 54:1675-1677

We discuss the photoluminescence (PL) properties of pseudomorphic modulation‐doped Al0.15Ga0.85As/In0.2Ga0.8As/GaAs quantum wells as a function of temperature. At 4.2 K, hole localization influences the PL linewidth; however, at higher temperatures

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8b21821d30675f2e72be13ec2818c116
https://doi.org/10.1063/1.101301

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Akademický článek

Influence of the structural surface state on the formation of a relief and morphology of GaAs(001) layers during molecular-beam epitaxy and vacuum annealing.

Autor: Vasev, A. V.¹ pvv@isp.nsc.ru, Putyato, M. A.¹, Semyagin, B. R.¹, Seleznev, V. A.¹, Preobrazhenskii, V. V.¹

Publikováno v: Russian Physics Journal. Sep2008, Vol. 51 Issue 9, p887-896. 10p. 2 Black and White Photographs, 3 Graphs.

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Akademický článek

Electronic parameters of the two-dimensional electron gas in modulation-doped single quantum wells due to an embedded deep step layer.

Autor: Kim, T. W., Lee, D. U., Choo, D. C., Jung, M., Yoo, K. H., Song, M. S., Yeo, T., Comanescu, G., McCombe, B. D., Kim, M. D.

Publikováno v: Journal of Applied Physics; 3/1/2001, Vol. 89 Issue 5, p2649, 4p, 1 Chart, 5 Graphs

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Akademický článek

Identification of room temperature photoluminescence in pseudomorphic modulation-doped...

Autor: Wu Lu, Geok-Ing Ng, Jogai, B., Jin-Hee Lee, Chul-Soon Park

Publikováno v: Journal of Applied Physics; 8/1/1997, Vol. 82 Issue 3, p1345, 5p, 6 Graphs

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Akademický článek

Temperature dependence of photoluminescence in modulation-doped pseudomorphic high electron mobility transistor AlxGa1-xAs/ InyGa1-yAs/GaAs structures.

Autor: Yu, P. W., Jogai, B., Rogers, T. J., Martin, P. A., Ballingall, J. M.

Publikováno v: Journal of Applied Physics; 12/1/1994, Vol. 76 Issue 11, p7535, 6p, 2 Charts, 9 Graphs

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Akademický článek

Quantitative characterization of modulation-doped strained quantum wells through line-shape analysis of room-temperature photoluminescence spectra.

Autor: Brierley, Steven K.

Publikováno v: Journal of Applied Physics; 8/15/1993, Vol. 74 Issue 4, p2760, 8p

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Akademický článek

Porphyra monospore system (Bangiales, Rhodophyta): A model for the developmental biology of marine plants.

Autor: Kitade, Yukihiro, Taguchi, Go, Shin, Jong-Ahm, Saga, Naotsune

Publikováno v: Phycological Research. Mar1998, Vol. 46 Issue 1, p17. 4p. 5 Diagrams, 1 Graph.

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Akademický článek

Pseudomorphic high electron mobility transistor channel sheet charge measured by photoluminescence.

Autor: Parsons, C. A., Kim, M. H., Quinn, W. E., Herrmann, H. B., Swirhun, S. E., Brierley, S. K.

Publikováno v: Journal of Applied Physics; 7/15/1994, Vol. 76 Issue 2, p1343, 3p

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Akademický článek

High-amplitude photoemission oscillation of highly As-rich GaAs (001) 2×4-γ phase during molecular beam epitaxy.

Autor: Tsuda, Hiroshi

Publikováno v: Journal of Applied Physics; 2/1/1993, Vol. 73 Issue 3, p1534, 3p

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