Zobrazeno 1 - 10
of 263
pro vyhledávání: '"D. Parish"'
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-12 (2022)
Abstract A low-cost, flexible processor is essential to realise affordable flexible electronic systems and transform everyday objects into smart-objects. Thin film transistors (TFTs) based on metal-oxides (or organics) are ideal candidates as they ca
Externí odkaz:
https://doaj.org/article/6679fe6d3a1e412aa15961dee95ee7e9
Publikováno v:
Inorganics, Vol 11, Iss 8, p 318 (2023)
The reactivity of the racemic N-heterocyclic stannylene [{MeHCN(tBu)}Sn] (1) with the chalcogenide elements O2, S, Se, and Te has been investigated. In the case of the reaction of 1 with molecular oxygen, the cyclic tristannoxane complex [{MeHCN(tBu)
Externí odkaz:
https://doaj.org/article/343ccab4c499404c9104700cda5cd322
Publikováno v:
Inorganic Chemistry. 62:4770-4785
Autor:
Andrew J. Straiton, Claire L. McMullin, Gabriele Kociok- Köhn, Catherine L. Lyall, James D. Parish, Andrew L. Johnson
Publikováno v:
Johnson, A, Parish, J, Straiton, A, McMullin, C, Kociok-Kohn, G & Lyall, C 2023, ' Lithium, Tin(II), and Zinc Amino-Boryloxy Complexes: Synthesis and Characterization ', Inorganic Chemistry . https://doi.org/10.1021/acs.inorgchem.2c03108
Analogous to the ubiquitous alkoxide ligand, metal boroxide and boryloxy complexes are an underexplored class of hard anionic O– ligand. A new series of amine-stabilized Li, Sn(II), and Zn boryloxy complexes, comprising electron-rich tetrahedral bo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fa832f10b0f926e3e651acd4d2bfbee4
https://purehost.bath.ac.uk/ws/files/265716498/ic_2022_031086_Final.docx
https://purehost.bath.ac.uk/ws/files/265716498/ic_2022_031086_Final.docx
Akademický článek
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Autor:
Alfredo Mameli, James D. Parish, Tamer Dogan, Gerwin Gelinck, Michael W. Snook, Andrew J. Straiton, Andrew L. Johnson, Auke J. Kronemeijer
Publikováno v:
Advanced Materials Interfaces, 9(9):2101278. Wiley
Mameli, A, Parish, J, Dogan, T, Gelinik, G, Snook, M, Straiton, A, Johnson, A L & Kronemeijer, A J 2022, ' High-Throughput Atomic Layer Deposition of p-Type SnO Thin Film Transistors Using Tin(II)bis(tert-amyloxide) ', Advanced Materials Interfaces, vol. 9, no. 9, 2101278 . https://doi.org/10.1002/admi.202101278
Mameli, A, Parish, J, Dogan, T, Gelinik, G, Snook, M, Straiton, A, Johnson, A L & Kronemeijer, A J 2022, ' High-Throughput Atomic Layer Deposition of p-Type SnO Thin Film Transistors Using Tin(II)bis(tert-amyloxide) ', Advanced Materials Interfaces, vol. 9, no. 9, 2101278 . https://doi.org/10.1002/admi.202101278
Spatial atomic layer deposition (sALD) of p-type SnO is demonstrated using a novel liquid ALD precursor, tin(II)-bis(tert-amyloxide), Sn(TAA) 2, and H 2O as the coreactant in a process which shows an increased deposition rate when compared to convent
Autor:
Michael S. Hill, Kieran C. Molloy, Thomas Wildsmith, Andrew L. Johnson, James D. Parish, Ibbi Y. Ahmet
Publikováno v:
Wildsmith, T, Parish, J D, Ahmet, I Y, Molloy, K C, Hill, M S & Johnson, A L 2021, ' Tin(II) Ureide Complexes : Synthesis, Structural Chemistry and Evaluation as SnO precursors ', Inorganic Chemistry, vol. 60, no. 22, pp. 17083-17093 . https://doi.org/10.1021/acs.inorgchem.1c02317
In an attempt to tailor precursors for application in the deposition of phase pure SnO, we have evaluated a series of tin (1-6) ureide complexes. The complexes were successfully synthesized by employing N,N′-Trialkyl-functionalized ureide ligands,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::426dbbe0fed757b07eb36915621018c5
https://purehost.bath.ac.uk/ws/files/226431407/IC_2021_023178.pdf
https://purehost.bath.ac.uk/ws/files/226431407/IC_2021_023178.pdf
Publikováno v:
Dalton transactions (Cambridge, England : 2003). 50(39)
We have successfully prepared and structurally characterized a family of eight tin(II) heteroleptic complexes, [Sn(NR2)(ON)]x (NR2 = NMe2 (1a–d) or N(SiMe3)2 (2a–d); x = 1 or 2) and four homoleptic systems, [Sn(κ2-ON)2] (3a–d) from a series of
Publikováno v:
Dalton Transactions. 47:7721-7729
SnO is a rare example of a stable p-type semiconductor material. Here, we describe the synthesis and characterisation of a family of Sn(ii) pyrrolide complexes for future application in the MOCVD and ALD of tin containing thin films. Reaction of the
Autor:
Ian Ashton, Carlos J.A. Campos, Peter I. Miller, Jamie D. Shutler, D Parish, David Raymond, Wiebke Schmidt
Publikováno v:
Aquacultural Engineering
The need to ensure future food security and issues of varying estuarine water quality is driving the expansion of aquaculture into near-shore coastal waters. It is prudent to fully evaluate new or proposed aquaculture sites, prior to any substantial