Zobrazeno 1 - 7
of 7
pro vyhledávání: '"D. P. Stumbo"'
Autor:
J. D. Rockrohr, R. J. Quickle, M. Sogard, Shinichi Kojima, Christopher F. Robinson, Kenji Morita, Steven D. Golladay, J. E. Lieberman, Paul Petric, David J. Pinckney, E. V. Tressler, Kazuya Okamoto, Teruaki Okino, Rodney A. Kendall, Shintaro Kawata, Hiroyasu Shimizu, Kazuaki Suzuki, W. T. Novak, Timothy R. Groves, Werner Stickel, S. C. Suziki, Samuel K. Doran, J. J. Senesi, D. P. Stumbo, G. Varnell, M. S. Gordon, R. S. Dhaliwal, Akikazu Tanimoto, Tetsutaro Yamaguchi, H. C. Pfeiffer
Publikováno v:
J. Vac. Sci. Technol. B. 17:2840-2846
Projection reduction exposure with variable axis immersion lenses (PREVAIL) represents the high throughput e-beam projection approach to NGL, which IBM is pursuing in cooperation with Nikon as alliance partner; another e-beam projection approach is S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4eb31ae4321a8dea012421606444c8e4
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100818145
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100818145
Autor:
J. C. Wolfe, D. P. Stumbo
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:3539
In ion beam proximity printing, a broad, collimated beam of light ions is directed through a stencil mask. For this process, aerial image contrast is limited primarily by scattering near the edges of the mask openings. Previous work by Karapiperis et
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dfdefa7e6b3dfd7917cb855ea5d94a2
https://doi.org/10.1116/1.587466
https://doi.org/10.1116/1.587466
Autor:
D. P. Stumbo, J. C. Wolfe
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:2432
The negative‐tone proton exposure characteristics of a chemically amplified resist based on an epoxy resin (Shell SU‐8) and an onium salt sensitizer (General Electric UVE‐1014) are described. This resist was developed by IBM for UV, electrons,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8e0a7362728e828cd10a2de5f3d8c3a
https://doi.org/10.1116/1.587000
https://doi.org/10.1116/1.587000
Autor:
S. Sen, Frederick Cho, K. F. Fong, D. P. Stumbo, John C. Wolfe, F. O. Fong, G. A. Damm, D. W. Engler
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9:2879
The electrodes of surface acoustic wave (SAW) devices cannot be represented in a stencil mask as cantilevered beams because the high aspect ratio makes them unstable. Therefore a complementary exposure technique has been developed. The mask pattern i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a63f57785299da0ab3848dc578ed1de9
https://doi.org/10.1116/1.585617
https://doi.org/10.1116/1.585617
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9:3597
We measure the fluorescent alignment generated by ion bombardment of an SiO2 wafer mark scanned behind a corresponding window pattern in a silicon stencil mask. We conclude that an optimized system can align to 50 nm (mean+3σ) in less than 300 ms. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a67dbf1b1585612bde2bb86b4717402a
https://doi.org/10.1116/1.585852
https://doi.org/10.1116/1.585852
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:1941
We have fabricated a gate‐level stencil mask for GaAs field effect transistors with 1000 gates and 1‐cm2 silicon foil area. Stress relief distortion was not significant relative to the measurement error of 25 nm(1σ). The results suggest that the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5a7f2227ac5b21eac601d470bb4c8dc
https://doi.org/10.1116/1.584879
https://doi.org/10.1116/1.584879
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:2008
We show that the bombardment of densified chemical vapor deposited SiO2 by hydrogen ions induces fluorescent defects. A proton dose of 6×1014 /cm2 saturates the fluorescence yield at approximately 0.6 photons/100 keV of absorbed proton energy. A bea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8369ba6e6f78fbc644810f8404bba6c
https://doi.org/10.1116/1.584892
https://doi.org/10.1116/1.584892