Zobrazeno 1 - 4
of 4
pro vyhledávání: '"D. P. Runthala"'
Publikováno v:
Critical Reviews in Solid State and Materials Sciences. 29:111-188
In the recent past a great deal of research efforts were directed toward the development of miniaturized gas-sensing devices, particularly for toxic gas detection and for pollution monitoring. Though various techniques are available for gas detection
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::982566a27a8792bdc0a9fd54805e74be
https://doi.org/10.1080/10408430490888977
https://doi.org/10.1080/10408430490888977
Autor:
W. Langheinrich, J. Vollrath, D. P. Runthala, P.D. Vyas, S.S. Shekhawat, D.K. Thakur, A. Kumar
Publikováno v:
Conference Record of the 1993 IEEE Industry Applications Conference Twenty-Eighth IAS Annual Meeting.
Darlington and parallel operations have been monolithically integrated using DMOS technology to develop a BiMOS transistor chip for superior switching speed with high current and power handling capacity for digital/analog circuitry. To achieve higher
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::109d9bb387ece9f34c093cce8676f5d3
https://doi.org/10.1109/ias.1993.299117
https://doi.org/10.1109/ias.1993.299117
Publikováno v:
IETE Journal of Research. 20:602-606
Results on the selective etching of a two layer system (resistive layer and conductive layer) on glass substrates to achieve resistors/resistor-networks have been described. This method is compared with the earlier used methods. The method reported i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5eb045a082df9132dacfacee682e520b
https://doi.org/10.1080/03772063.1974.11487489
https://doi.org/10.1080/03772063.1974.11487489
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 7:599
Thermal oxides were grown on different doped polysilicon thin films: (i) as‐grown polysilicon at 620 °C, (ii) as‐grown polysilicon and annealed at 1000 and 1100 °C in nitrogen, and (iii) as‐grown amorphous silicon films at 570 °C subsequentl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f6dbbf7431217b4024f4dd0964097d2
https://doi.org/10.1116/1.584801
https://doi.org/10.1116/1.584801