Zobrazeno 1 - 10 of 11 pro vyhledávání: '"D. P. Masson"'
1
Akademický článek
Isolation of III-V/Ge Multijunction Solar Cells by Wet Etching
Autor: A. Turala, A. Jaouad, D. P. Masson, S. Fafard, R. Arès, V. Aimez
Publikováno v: International Journal of Photoenergy, Vol 2013 (2013)
Microfabrication cycles of III-V multijunction solar cells include several technological steps and end with a wafer dicing step to separate individual cells. This step introduces damage at lateral facets of the junctions that act as charge trapping c
Externí odkaz: https://doaj.org/article/317a235f13804709b8aa05cbcb067b86
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2
Akademický článek
Flank stability and processes off the western Canary Islands: a review from El Hierro and La Palma
Autor: Roger Urgeles, Miquel Canals, D. G. Masson
Publikováno v: Scientia Marina, Vol 65, Iss S1, Pp 21-32 (2001)
The morphological characterisation of the western submarine island flanks of El Hierro and La Palma differentiates four type-zones that may give new insights into the evolution of oceanic island slopes. The different type-zones result from the interp
Externí odkaz: https://doaj.org/article/e33f3368aee64289b6997c942e6be108
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3
Bonding at the CdSe/SiOx (x=0,1,2) interfaces
Autor: J. E. Hulse, Dolf Landheer, T. Quance, D. P. Masson
Publikováno v: Journal of Applied Physics. 84:4911-4920
The chemistry occurring at the CdSe/Si, CdSe/SiO, and CdSe/SiO2 interfaces was investigated by looking at very thin tapered films (0–10 nm) of thermally evaporated CdSe with x-ray photoelectron spectroscopy. The analysis of the attenuation of the x
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c7f3b6aa71b408bda2d157cc7f0ac9bd
https://doi.org/10.1063/1.368735
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4
Factors affecting interface-state density and stress of silicon nitride films deposited on Si by electron-cyclotron resonance chemical vapor deposition
Autor: K. Rajesh, T. Quance, D. P. Masson, G. I. Sproule, John Hulse, Dolf Landheer
Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:2931-2940
The physical and electrical properties of nitrogen-rich silicon nitride films deposited by electron-cyclotron resonance chemical vapor deposition with silane and molecular nitrogen have been investigated for pressures below 0.4 Pa. No Si–Si bonding
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::741227457206068848d48b0a2d4d84b0
https://doi.org/10.1116/1.581442
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5
Back-surface passivation of polycrystalline CdSe thin-film transistors
Autor: S. R. Das, D. P. Masson, T. Quance, John Hulse, L. LeBrun, Dolf Landheer, S. Belkouch
Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:834-837
The electrical characteristics of simple inverted-gate CdSe thin-film transistors (TFTs) were monitored after annealing and back-surface passivation treatments and the results were correlated with chemical analysis of the back interface. A dramatic i
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bfaf64f307786a7cd229ace19f3e182a
https://doi.org/10.1116/1.581068
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6
Effects of initial annealing treatments on the electrical characteristics and stability of unpassivated CdSe thin film transistors
Autor: D. P. Masson, L. LeBrun, Dolf Landheer, S. Belkouch, T. Quance, S. R. Das, S. J. Rolfe
Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:860-863
Secondary ion mass spectrometry shows that when CdSe is annealed in air at 350 °C oxygen diffuses inside the grains and the diffusion is enhanced at the grain boundaries. Subsequent vacuum annealing removes oxygen from inside the grains and from the
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b1375dcfef04adbca59d38c289a83843
https://doi.org/10.1116/1.581023
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7
Thermal oxide on CdSe
Autor: M. J. Graham, D. P. Masson, D. J. Lockwood
Publikováno v: Journal of Applied Physics. 82:1632-1639
X-ray photoelectron spectroscopy (XPS) has been used to characterize the thin thermal oxide film grown on single crystal CdSe(0001) and polycrystalline CdSe by exposure to O2 (dry air) at 350 °C. SeOx species, where x=2,3, are clearly identified by
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::138ab3c19028f77e73d857054c52f656
https://doi.org/10.1063/1.366263
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10
Temperature distribution over a GaAs heterojunction bipolar transistor measured by fluorescent microthermal imaging
Autor: A. Hagley, Martine Simard-Normandin, Michel Meunier, D. P. Masson, N. Boyer, B. Oliver
Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:754-756
Fluorescent microthermal imaging (FMI) is used to measure the temperature at the surface of a 2×2 μm2 heterojunction bipolar transistor. The presence of an artifact at the emitter post indicates that accurate temperature measurements are limited to
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8bc23cc2bdb660c468d34f700502ce11
https://doi.org/10.1116/1.582173
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