Zobrazeno 1 - 8
of 8
pro vyhledávání: '"D. P. Litvin"'
Publikováno v:
Materials Science Forum. 858:101-104
Recently, the wide bandgap semiconductors, especially silicon carbide (SiC), have become more important due to the unique electrical and thermophysical properties that make them applicable to a variety of electronic devices (Schottky and PiN diodes,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::773b0fbb23dcefe75dfea4f0e2ced2be
https://doi.org/10.4028/www.scientific.net/msf.858.101
https://doi.org/10.4028/www.scientific.net/msf.858.101
Autor:
Alexander N. Smirnov, V. S. Levitskii, V. Yu. Davydov, Yu.N. Makarov, S. N. Novikov, Sergey P. Lebedev, D. P. Litvin, A. A. Lebedev
Publikováno v:
TECHNICAL PHYSICS. 61(3):453-457
Epitaxial graphene layers are produced with the aid of thermal destruction of the surface of a semi-insulating SiC substrate. Raman spectroscopy and atomic-force microscopy are employed in the study of the film homogeneity. A prototype of the gas sen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a9e4cb9fac13590f4ec2fc189bbc29ba
https://doi.org/10.1134/S1063784216030130
https://doi.org/10.1134/S1063784216030130
Autor:
S. S. Nagalyuk, A.A. Wolfson, D. P. Litvin, A. V. Vasiliev, I. Izmaylova, Yu. Makarov, O. Kazarova, Heikki Helava, E. N. Mokhov
Publikováno v:
physica status solidi c. 10:445-448
The features of 2” AlN bulk crystal growth by the sublimation sandwich method (SSM) on SiC seeds in a graphite-heated reactor are investigated. AlN growth conditions and crystal properties are compared with the results of SiC sublimation growth in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c34db0ce11e2cca693768cddb7273c48
https://doi.org/10.1002/pssc.201200638
https://doi.org/10.1002/pssc.201200638
Autor:
A.O. Avdeev, A.A. Wolfson, A.V. Vasiliev, S. S. Nagalyuk, E. N. Mokhov, D. P. Litvin, Yu. Makarov, Heikki Helava, M.G. Ramm
Publikováno v:
Materials Science Forum. :95-98
AlN bulk crystals were grown by the sublimation “sandwich method” on the SiC substrates. Two types of containers were used: (i) Ta container with a surface layer of TaC created by the special annealing in contact with carbon, (ii) TaC container c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10d5ef84f4862865f2da2af381f79749
https://doi.org/10.4028/www.scientific.net/msf.740-742.95
https://doi.org/10.4028/www.scientific.net/msf.740-742.95
Autor:
D. P. Litvin, P. L. Abramov, A. V. Vasiliev, T.Yu. Chemekova, Yu.N. Makarov, A. S. Tregubova, A. A. Lebedev, Marina G. Mynbaeva
Publikováno v:
Semiconductors. 45:828-831
Sublimation epitaxy in a vacuum has been used to grow silicon carbide layers with a low defect concentration and with SiC wafers cut from single-crystal ingots produced by the modified Lely method serving as substrates. It is concluded on the basis o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a867811e953fadd8703ec718fef092d8
https://doi.org/10.1134/s1063782611060157
https://doi.org/10.1134/s1063782611060157
Publikováno v:
Springer Proceedings in Physics ISBN: 9783642844041
Springer Proceedings in Physics
Springer Proceedings in Physics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::439ead484888aa8738ed640d5a58dcee
https://doi.org/10.1007/978-3-642-84402-7_33
https://doi.org/10.1007/978-3-642-84402-7_33
Publikováno v:
Springer Proceedings in Physics ISBN: 9783642844041
Springer Proceedings in Physics
Springer Proceedings in Physics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2e1ebfb421e018b86992463ff78e7d3
https://doi.org/10.1007/978-3-642-84402-7_36
https://doi.org/10.1007/978-3-642-84402-7_36
Publikováno v:
Litʹë i Metallurgiâ, Vol 0, Iss 3, Pp 132-133 (2007)
Externí odkaz:
https://doaj.org/article/7baf0c14cc254af381dbd8d8cd10e423