Zobrazeno 1 - 2
of 2
pro vyhledávání: '"D. P. Ioannou"'
Autor:
U. S. Raghunathan, S. Sirohi, V. Ruparelia, P. K. Sharma, D. P. Ioannou, V. Jain, H. K. Kakara, S. Gedela, V. Vanukuru, P. Dongmo, C. Luce, R. Hazbun, R. Krishnasamy, J. Hwang, M. Levy, K. Welch, S. Liu, B. Cucci, S. Cole, J. Kantarovsky, A. Vallett, I. McCallum-Cook, M. Yu, R. Phelps, A. Divergilio, A. Sturm, M. Peters, S. Johnson, R. Rassel, M. Lagerquist, M. Kerbaugh, K. Newton, J. Pekarik, Q. Liu
Publikováno v:
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67ea73f38d4a6964790419c9125cf1c6
https://doi.org/10.1109/bcicts53451.2022.10051761
https://doi.org/10.1109/bcicts53451.2022.10051761
Autor:
Y. Tan, M. Jaffe, Ping-Chuan Wang, K. Bandy, David G. Brochu, R. Achanta, R. Logan, D. P. Ioannou
Publikováno v:
IRPS
The Hot Carrier Injection (HCI) effects on the DC and small signal RF parameters of nanoscale Silicon-On-Insulator (SOI) nMOSFETs developed for high performance low noise amplifier (LNA) circuits are investigated. In recent years there has been an in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e8df7cf75d84856e8c4ec2e766d1286
https://doi.org/10.1109/irps.2018.8353697
https://doi.org/10.1109/irps.2018.8353697