Zobrazeno 1 - 10
of 16
pro vyhledávání: '"D. P. Griffis"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:2323-2328
Recent advances in semiconductor technology have allowed the fabrication of Si‐based devices with submicron lateral dimensions, thus requiring the concurrent development of the analytical techniques for characterization of the shallow junctions (30
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62eb95d401840349141c4bafb71ac7b2
https://doi.org/10.1116/1.576757
https://doi.org/10.1116/1.576757
Autor:
D. P. Griffis, F. A. Stevie, G. R. Myneni, Phillip E. Russell, Donovan N. Leonard, A. D. Batchelor
Publikováno v:
AIP Conference Proceedings.
Single crystal niobium specimens of (100), (110) and (111) crystal orientations have been analyzed using TEM and SIMS. The TEM specimens were prepared using Focused Ion Beam (FIB) and show niobium oxide thicknesses ranging from 4.9 to 8.3 nm for the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5621aacfa8b2159fd64d7af7557a1b2d
https://doi.org/10.1063/1.2770680
https://doi.org/10.1063/1.2770680
Publikováno v:
Proceedings, annual meeting, Electron Microscopy Society of America. 52:1070-1071
Applications of atomic force microscopy (AFM) for the characterization and metrology of technologically-important objects (e.g. x-ray lithography masks) has led to the development of special-purpose, high-aspect-ratio probes. Measuring objects that h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c507bef01bd9e7b47a23c91c3d6693f
https://doi.org/10.1017/s042482010017308x
https://doi.org/10.1017/s042482010017308x
Publikováno v:
Proceedings, annual meeting, Electron Microscopy Society of America. 52:366-367
Many biological events occur at a small number of specific sites within a very large volume. It has recently been shown that focused ion beam (FIB) technology is useful for exposing biological structures for examination. In addition, it has been show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::caa0d01aa4db15dc5ce456f06166b12f
https://doi.org/10.1017/s0424820100169560
https://doi.org/10.1017/s0424820100169560
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 19:2539
A method of micromachining a copper layer on a substrate is carried out by maintaining the substrate in a vacuum, bombarding a portion of the substrate with a focused particle beam from a particle source, and exposing the substrate to a supply of org
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9aa478fc8a4a6883d61911dd22ccff57
https://doi.org/10.1116/1.1418406
https://doi.org/10.1116/1.1418406
Publikováno v:
Analytical Chemistry. 57:137-142
The Cameca IMS-3f ion microscope was used to obtain negative SIMS spectra of poly(methyl methacrylate) (PMMA) and chemically modified PMMA films to assess its ability to provide surface structural information from organic samples. Negative ion spectr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c996a79eedf99113347eb6134bc86cd5
https://doi.org/10.1021/ac00279a035
https://doi.org/10.1021/ac00279a035
Autor:
T. Brat, S. Corcoran, Carlton M. Osburn, Nalin R. Parikh, Wei-Kan Chu, S. Lin, D. P. Griffis, D. Sharma
Publikováno v:
Journal of The Electrochemical Society. 135:1490-1504
Etude de la redistribution du bore et de l'arsenic pendant la technologie auto-alignee de formation de TiSi 2 appliquee aux jonctions peu profondes (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a7894f59731d4697c2a6abfd1e5aa61
https://doi.org/10.1149/1.2096041
https://doi.org/10.1149/1.2096041
Autor:
K.G. Kupke, Peter Ingram, J. P. Pickett, Peter C. Burger, John D. Shelburne, Richard W. Linton, D. P. Griffis
Publikováno v:
Journal of Electron Microscopy Technique. 1:299-309
In order to correctly interpret the chemical images obtained using ion microscopy (IM), it is useful to correlate them with the information provided by conventional light microscopy (LM), secondary electron imaging (SEI), backscattered electron imagi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d5cf7bd271e0b857d6150cafebe92bc
https://doi.org/10.1002/jemt.1060010309
https://doi.org/10.1002/jemt.1060010309
Autor:
Richard W. Linton, D. P. Griffis
Publikováno v:
Surface and Interface Analysis. 6:15-20
A quantitative approach to AES is illustrated for various metal–sulfur compounds involving: (a) intensity measurements via integral areas of background subtracted N(E) spectra (including sample probe potential biasing to improve background subtract
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55dd05eba244f83f35bd4946f65846c7
https://doi.org/10.1002/sia.740060103
https://doi.org/10.1002/sia.740060103
Publikováno v:
Journal of The Electrochemical Society. 136:502-507
The redistribution of common electrical dopants during thermal oxidation thin films at 1473 K in dry was characterized by secondary ion mass spectrometry (SIMS). Experimental segregation coefficients and interfacial concentration ratios were determin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::667f9ead47282ed0c30b55c1ef02c2e1
https://doi.org/10.1149/1.2096669
https://doi.org/10.1149/1.2096669