Zobrazeno 1 - 9
of 9
pro vyhledávání: '"D. P. Druist"'
Autor:
D. P. Druist, H. A. Walling, D. P. Dougherty, K. D. Maranowski, Elisabeth G. Gwinn, A. C. Gossard
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 12:132-135
We study the temperature dependence of vertical transport in GaAs/Al 0.1 Ga 0.9 As multilayers, in the regime of the integer quantum Hall effect. At low temperatures, vertical transport in quantum Hall states occurs on a two-dimensional chiral sheath
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a442153c79724fdf304a877ef507ffa2
https://doi.org/10.1016/s1386-9477(01)00285-5
https://doi.org/10.1016/s1386-9477(01)00285-5
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 6:619-622
We study the conductance of the edge state sheath that forms in the integer quantum Hall effect from the coupled edge states of a GaAs/Al0.1Ga0.9As multilayer, as the magnetic field is tilted away from the direction perpendicular to the layers. As th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8197ebd6b91c7775e7a99d5522d9d2d1
https://doi.org/10.1016/s1386-9477(99)00130-7
https://doi.org/10.1016/s1386-9477(99)00130-7
Autor:
Elisabeth G. Gwinn, K. D. Maranowski, D. P. Druist, P. J. Turley, Kyung Hwa Yoo, Arthur C. Gossard
Publikováno v:
Superlattices and Microstructures. 25:181-184
We study conductance fluctuations of the edge-state sheath that forms in the integer quantum Hall effect from the coupled edge states of a GaAs/Al x Ga 1 − x As multilayer. Comparison of the measured variance in the vertical conductance to recent t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0a02a6446d3513c4504fa36429ee591
https://doi.org/10.1006/spmi.1998.0634
https://doi.org/10.1006/spmi.1998.0634
Autor:
D. P. Druist, Arthur C. Gossard, P. J. Turley, K. D. Maranowski, Elisabeth G. Gwinn, K Campmann
Publikováno v:
Physica B: Condensed Matter. :410-414
We study tunneling through gated point contacts on GaAs/AlGaAs heterojunctions in the regime of the integer (IQHE) and fractional (FQHE) quantum Hall effects. The off-resonant conductance data at bulk filling factor ν= 1 3 has a steep temperature de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05b9ade9a491e78574c2d4b7f8a6de12
https://doi.org/10.1016/s0921-4526(98)00146-x
https://doi.org/10.1016/s0921-4526(98)00146-x
Publikováno v:
Physica B: Condensed Matter. :70-74
We have made electronic transport studies of the integer quantum Hall effect in a three-dimensional, layered semiconductor structure. When in-plane transport is quantized, the dependence of the vertical conductance Gzz on device size shows that curre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb949dc51bcb866c62fb78e3d7bf67ff
https://doi.org/10.1016/s0921-4526(98)00069-6
https://doi.org/10.1016/s0921-4526(98)00069-6
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 12:129-131
We examine the effects of threading magnetic flux through the chiral metal that forms near the surface of 3D semiconductor multilayers in the regime of the quantum Hall effect. In low-temperature studies of GaAs/AlGaAs multilayers, we find that the r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebf038226fae12c28fc2ba49f3241113
https://doi.org/10.1016/s1386-9477(01)00284-3
https://doi.org/10.1016/s1386-9477(01)00284-3
Publikováno v:
Journal of Low Temperature Physics. 87:113-123
In agreement with recent theoretical predictions, volumetric vapor pressure isotherm studies indicate a substantial reduction in the adsorption of 4He at temperature near and below 2K when the graphite surface is coated with Cs.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c2cd569bd496b6226f27feb08062767
https://doi.org/10.1007/bf00141570
https://doi.org/10.1007/bf00141570
Autor:
D. P. Druist, Elisabeth G. Gwinn, H. A. Walling, K. D. Maranowski, A. C. Gossard, D. P. Dougherty
Publikováno v:
Physical Review B. 70
We study the temperature dependence of vertical transport through the chiral sheath of surface states that exists near the sidewalls of $\mathrm{GaAs}∕{\mathrm{Al}}_{0.01}{\mathrm{Ga}}_{0.09}\mathrm{As}$ multilayer structures in the regime of the i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8574940110099c03423b4c812e5e9b3b
https://doi.org/10.1103/physrevb.70.045312
https://doi.org/10.1103/physrevb.70.045312
Publikováno v:
Physical Review B. 68
We use tilted magnetic fields to study the magnetoresistance of the chiral sheath of edge states that transports charge through GaAs/AlGaAs multilayers in the integer quantum Hall regime. The magnetic field component perpendicular to the layer planes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b6c79e630b534d40c536acccca3523c
https://doi.org/10.1103/physrevb.68.075305
https://doi.org/10.1103/physrevb.68.075305