Defects, Junction Leakage and Electrical Performance of Ge pFET Devices

Autor: Geert Hellings, Jerome Mitard, Marc Meuris, Gang Wang, Roger Loo, Rui Yang, Geert Eneman, Eddy Simoen, Kristin De Meyer, Cor Claeys, Matty Caymax, Brice De Jaeger, D. P. Brunco, Marc Heyns

Publikováno v: ECS Transactions. 19:195-205

The different leakage components in a germanium MOS technology are studied, with the main focus on highly-doped p+/n junctions designed for short-channel Ge pFET fabrication. Three main components of junction leakage are discerned, depending on the p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2011bd0b57152b1759f0a143b02158f5
https://doi.org/10.1149/1.3118945

Etch Rates of Ge, GaAs and InGaAs in Acids, Bases and Peroxide Based Mixtures

Autor: Evi Vrancken, Marc Heyns, Marc Meuris, Sonja Sioncke, D. P. Brunco, Jan Van Steenbergen, Olivier Uwamahoro

Publikováno v: ECS Transactions. 16:451-460

Si has dominated semiconductor industry for decades. However, new materials are appearing in this field such as Ge, GaAs and InxGa1-xAs. In semiconductor processing several wet chemical steps are used including cleaning, etching and stripping. Knowle

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::75113ddcbeaa713647acaa4b328481c4
https://doi.org/10.1149/1.2986802

Electrical characteristics of 8-/spl Aring/ EOT HfO/sub 2//TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions

Autor: T. Kauerauf, Kristin De Meyer, Wilman Tsai, Lionel Trojman, S. De Gendt, V. Kaushik, Guido Groeseneken, M.M. Heyns, S. Severi, Lars-Ake Ragnarsson, Michel Houssa, D. P. Brunco, Annelies Delabie, Marc Aoulaiche, Robin Degraeve, Katrina Johnson

Publikováno v: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2006, 53 (7), pp.1657-1668. ⟨10.1109/TED.2006.876274⟩
IEEE Transactions on Electron Devices, 2006, 53 (7), pp.1657-1668. ⟨10.1109/TED.2006.876274⟩

The authors demonstrate high-performing n-channel transistors with a HfO2/TaN gate stack and a low thermal-budget process using solid-phase epitaxial regrowth of the source and drain junctions. The thinnest devices have an equivalent oxide thickness

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::583d30ef406b93d92a5a3f9454742a1b
https://hal.archives-ouvertes.fr/hal-02952318

Flatband voltage shift of ruthenium gated stacks and its link with the formation of a thin ruthenium oxide layer at the ruthenium/dielectric interface

Autor: N. Yamada, A. Akheyar, D. P. Brunco, Z. Li, Luigi Pantisano, Thierry Conard, Valery V. Afanas'ev, P. Lehnen, Wim Deweerd, Sheron Shamuilia, S. De Gendt, S. Van Elshocht, Andre Stesmans, K. De Meyer, Tom Schram

Publikováno v: Journal of Applied Physics. 101:034503

A systematic study about the flatband voltage (Vfb) shift of Ru gated metal-oxide-semiconductor stacks after thermal treatment in O2 has been performed. The dependence of the Vfb shift on the anneal time and temperature and the thickness of Ru was st

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ca4591853dde54dd023d9129621479c7
https://doi.org/10.1063/1.2429730

Germanium FETs and capacitors with rare earth CeO2/HfO2 gates.

Autor: A. Dimoulas, Y. Panayiotatos, A. Sotiropoulos, P. Tsipas, D. P. Brunco, G. Nicholas, J. Van Steenbergen, F. Bellenger, M. Houssa, M. Caymax, M. Meuris

Publikováno v: 2006 European Solid-State Device Research Conference; 2006, p142-145, 4p