Zobrazeno 1 - 10
of 25
pro vyhledávání: '"D. P. Bour"'
Autor:
Michael W. Moseley, G. Vizkelethy, D. Disney, D. P. Bour, William R. Wampler, A. A. Allerman, I. C. Kizilyalli, Jeramy R. Dickerson, R. M. Fleming, Jonathan J. Wierer, H. Nie, Andrew M. Armstrong, Robert Kaplar, Ozgur Aktas, François Léonard, A. Alec Talin, J. M. Campbell, M. P. King
Publikováno v:
IEEE Transactions on Nuclear Science. 62:2912-2918
Electrical performance and defect characterization of vertical GaN P-i-N diodes before and after irradiation with 2.5 MeV protons and neutrons is investigated. Devices exhibit increase in specific on-resistance following irradiation with protons and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::201e687115d00c15bf35a7208c3ab7ba
https://doi.org/10.1109/tns.2015.2480071
https://doi.org/10.1109/tns.2015.2480071
Autor:
T. R. Stewart, D. P. Bour
Publikováno v:
Journal of The Electrochemical Society. 139:1217-1219
The (Al x Ga 1-x ) 0.5 In 0.5 P material system, lattice matched to GaAs substrates, is used for visible diode lasers. Here we characterize two chemical etchants for AlGaInP: hot sulfuric acid (H 2 SO 4 ), and dilute hydrochloric acid (1HCl:1H 2 O).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dab37d8400efd0fed3885306e2b34acc
https://doi.org/10.1149/1.2069370
https://doi.org/10.1149/1.2069370
Publikováno v:
IEEE Photonics Technology Letters. 2:531-533
Dark-line defect formation is compared in GaAs/AlGaAs and strained InGaAs/AlGaAs quantum well lasers. Dark-line defects have high growth velocity along
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8a1b8453974d5231058583712211702
https://doi.org/10.1109/68.58039
https://doi.org/10.1109/68.58039
Publikováno v:
Applied Physics Letters. 56:1365-1367
Substantial blue shifts in the transition energies of GaInAs/AlInAs single quantum wells were observed due to localized SiO2 capping and rapid thermal annealing at temperatures between 750 and 900 °C. In contrast to previously reported results, regi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73312a945bb1b7cada2d215895abbff3
https://doi.org/10.1063/1.103204
https://doi.org/10.1063/1.103204
Publikováno v:
LEOS 1993 Summer Topical Meeting Digest on Optical Microwave Interactions/Visible Semiconductor Lasers/Impact of Fiber Nonlinearities on Lightwave Systems/Hybrid Optoelectronic Integration and Packagi.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48a387bd5bc2f6ffadcfbb85896112a8
https://doi.org/10.1109/leosst.1993.696834
https://doi.org/10.1109/leosst.1993.696834
Autor:
M. Troccoli, Rafal Lewicki, Cheng Wang, Mikhail A. Belkin, D. P. Bour, Nanfang Yu, Gerard Wysocki, G. Hofler, Federico Capasso, Frank K. Tittel, L. Diehl, Scott W. Corzine
Publikováno v:
Journal of Lightwave Technology. 28:984-984
For the above titled paper (ibid., vol. 26, no. 21, pp. 3534-3555, Nov. 08), there are some additional comments that are presented here.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0d332c4bc134a1a477b36d3b252f853
https://doi.org/10.1109/jlt.2009.2038413
https://doi.org/10.1109/jlt.2009.2038413
Publikováno v:
Optical Society of America Annual Meeting.
The design, fabrication, and operating characteristics are presented for grating surface-emitting lasers containing a buried grating structure.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::956468253415345aac39c1ebc3e53264
https://doi.org/10.1364/oam.1990.tul7
https://doi.org/10.1364/oam.1990.tul7
Publikováno v:
Optical Society of America Annual Meeting.
Monolithic, surface-emitting laser array technology is an attractive approach for producing the high-power coherent sources required for free-space coherent optical communications. Recent developments will be reviewed, and conceptual array designs fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::209a72b664814dc2939c08954a95ebe9
https://doi.org/10.1364/oam.1990.tul6
https://doi.org/10.1364/oam.1990.tul6
Publikováno v:
Optical Society of America Annual Meeting.
The carrier recombination rates in GaAs1 and strained InGaAs/GaAs single-quantumwell lasers have been studied using the differential carrier-lifetime technique for carrier densities from 1017-1019/cm3. We have found that the carrier lifetime is not a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c704d105015fd0d11ddd0c073292728c
https://doi.org/10.1364/oam.1990.tun4
https://doi.org/10.1364/oam.1990.tun4
Publikováno v:
Optical Society of America Annual Meeting.
Monolithically integrated master oscillator-power amplifiers using grating surface-emitting lasers have been fabricated using first-, second-, and nonintegral-order gratings defined by electron-beam lithography. The device consists of one master osci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d56382a0babfdac0ffcb281637af6214
https://doi.org/10.1364/oam.1990.tul8
https://doi.org/10.1364/oam.1990.tul8