Zobrazeno 1 - 10
of 45
pro vyhledávání: '"D. Obrebski"'
Autor:
Dominique Coquillat, Jacek Marczewski, D. Obrebski, D. Yavorskiy, Przemyslaw Zagrajek, Pawel Kopyt, Cezary Kolacinski, Krzysztof Kucharski, Norbert Palka, Radoslaw Ryniec, Wojciech Knap, Daniel Tomaszewski, J. Lusakowski
Publikováno v:
Opto-Electronics Review
Opto-Electronics Review, Springer Verlag, 2018, 26 (4), pp.261. ⟨10.1016/j.opelre.2018.08.002⟩
Opto-Electronics Review, Springer Verlag, 2018, 26 (4), pp.261. ⟨10.1016/j.opelre.2018.08.002⟩
International audience; Recent advances in THz detection with the use of CMOS technology have shown that this option has the potential to be a leading method of producing low-cost THz sensors with integrated readout systems. This review paper, based
Publikováno v:
IEEE Transactions on Terahertz Science and Technology. 7:424-432
The paper describes a convenient way to numerically model planar antennas dedicated to sub-terahertz (THz) radiation detectors while accounting for multiple oxide layers included in typical silicon-based substrates used in microelectronics. Several a
Autor:
Sergey Ganichev, Sergey Danilov, Przemyslaw Zagrajek, Jacek Marczewski, Dmytro B. But, Pawel Kopyt, Cezary Kolacinski, D. Obrebski, Wojciech Knap, Michal Zaborowski
Publikováno v:
2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).
We present a systematic study of time resolution and power dependence of the responsivity of three significantly different types of the Field Effect Transistor based detectors. We analyze photoresponse of custom-made Si junctionless FETs (JLFETs), Si
Autor:
Bartlomiej Salski, P. Zagrajek, Matthew F. Bauwens, D. Obrebski, N. S. Barker, Pawel Kopyt, J. Marczewski
Publikováno v:
2018 IEEE/MTT-S International Microwave Symposium - IMS.
This article describes a novel approach to measure responsivity of a FET-based sub-THz detector using on-wafer probes to directly feed a bare antenna-less detecting device. Thus, the approach eliminates the need to know beforehand the detector's effe
Publikováno v:
2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz).
This paper describes metal-oxide-semiconductor field effect transistors working as detectors of THz radiation integrated monolithically with a source follower (the common-drain amplifier). This solution makes lock-in measurements independent of the l
Publikováno v:
2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz).
The article describes a convenient way to numerically model antennas for sub-THz radiation detectors while accounting for multiple oxide layers included in typical silicon substrates used in microelectronic technologies. Several approaches are presen
Publikováno v:
2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz).
In this work the complete system for THz measurements is presented and briefly described. Proposed solution allows to avoid the most important disadvantages of the lock-in technique without compromising the noise parameters of the developed readout s
Publikováno v:
Proceedings of 40th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
In this paper an attention is paid to the existence of parasitic elements in a typical n-channel MOSFET devices that are often employed in sub-THz detectors and the role they play in when such devices are employed at sub-THz frequencies. An effective
Publikováno v:
Proceedings of 40th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
The lock-in technique is commonly used for measurements of very small DC signals in the presence of overwhelming noise. However, phase sensitive detection has its own limitations and it cannot be always easily applied in every test setup configuratio
Autor:
Przemyslaw Zagrajek, D. Obrebski, Jacek Marczewski, Matthew F. Bauwens, N. S. Barker, Pawel Kopyt
Publikováno v:
2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz).