Zobrazeno 1 - 8
of 8
pro vyhledávání: '"D. O. Toginho Filho"'
Autor:
Ivan Frederico Lupiano Dias, D. O. Toginho Filho, José Leonil Duarte, Jean C. Harmand, Edson Laureto
Publikováno v:
Scopus-Elsevier
We present a comparative study carried out on the optical and electrical characteristics of undoped and Te doped AlGaAsSb/AlAsSb Bragg mirrors with 6.5 pairs of layers and bulk undoped and Te doped AlGaAsSb epilayers alloys lattice matched on InP, gr
Autor:
Jean C. Harmand, D. O. Toginho Filho, Ivan Frederico Lupiano Dias, José Leonil Duarte, Edson Laureto
Publikováno v:
Brazilian Journal of Physics v.35 n.4a 2005
Brazilian Journal of Physics
Sociedade Brasileira de Física (SBF)
instacron:SBF
Scopus-Elsevier
Brazilian Journal of Physics, Volume: 35, Issue: 4a, Pages: 1005-999, Published: DEC 2005
Brazilian Journal of Physics
Sociedade Brasileira de Física (SBF)
instacron:SBF
Scopus-Elsevier
Brazilian Journal of Physics, Volume: 35, Issue: 4a, Pages: 1005-999, Published: DEC 2005
A detailed study of the photoluminescence properties in undoped and Te-doped AlGaAsSb alloys lattice matched to InP is presented. Photoluminescent temperature and excitation intensity dependences are employed to discuss the origin of the dominant tra
Autor:
E. A. Meneses, L. C. Poças, S. A. Lourenço, I. F. L. Dias, Irineu Mazzaro, Jean-Christophe Harmand, E. Laureto, D. O. Toginho Filho, J. L. Duarte
Publikováno v:
Journal of Applied Physics. 91:8999-9004
Properties of the interface between the epitaxial layer of heavily doped Al0.48In0.52As:Si and the InP(Fe) substrate are investigated by photoluminescence in AlInAs:Si/InP(Fe) heteroestructures grown by molecular beam epitaxy. The effect on heterostr
Autor:
Edson Laureto, Sidney A. Lourenço, D. O. Toginho Filho, José Leonil Duarte, Jean-Christophe Harmand, Ivan Frederico Lupiano Dias, L. C. Poças
Publikováno v:
Superlattices and Microstructures. 31:277-283
AlGaAsSb/AlAsSb Bragg mirrors lattice matched on InP with six pairs of layers were grown by molecular beam epitaxy. The effect of Te doping on the electrical and optical properties of the Bragg mirrors, and the presence of digital alloy gradient laye
Autor:
José Leonil Duarte, Sidney A. Lourenço, Ivan Frederico Lupiano Dias, E. A. Meneses, Edson Laureto, J. R. Leite, D. O. Toginho Filho
Publikováno v:
The European Physical Journal B. 21:11-17
AlxGa1-xAs/GaAs double quantum well structures with different well thickness and different barrier aluminum concentration (x = 0.17, 0.30, 0.40) were characterized by the photoluminescence technique. The temperature dependence of excitonic transition
Autor:
S. A. Loureno, I. F. L. Dias, J. L. Duarte, E. Laureto, L. C. Poças, D. O. Toginho Filho, J. R. Leite
Publikováno v:
Brazilian Journal of Physics v.34 n.2a 2004
Brazilian Journal of Physics
Sociedade Brasileira de Física (SBF)
instacron:SBF
Brazilian Journal of Physics, Volume: 34, Issue: 2a, Pages: 517-525, Published: JUN 2004
Brazilian Journal of Physics
Sociedade Brasileira de Física (SBF)
instacron:SBF
Brazilian Journal of Physics, Volume: 34, Issue: 2a, Pages: 517-525, Published: JUN 2004
Photoluminescence and photoreflectance measurements have been used to determine excitonic transitions in the ternary Al xGa1-xAs alloy in the temperature range from 2 to 300 K. The effect of the thermal expansion contribution on the temperature depen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d567698c7291571aad596cbc3736a48
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000300031
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000300031
Autor:
Edson Laureto, Sidney A. Lourenço, J. Klem, José Leonil Duarte, Ivan Frederico Lupiano Dias, L. C. Poças, D. O. Toginho Filho, Shriganesh S. Prabhu
Publikováno v:
Journal of Applied Physics. 97:123702
We identify quasi-donor-acceptor pair transitions in the photoluminescence spectra of GaAsSb and AlGaAsSb layers, lattice matched to InP, and grown by molecular-beam epitaxy. These alloys show compositional inhomogeneity due to phase separation resul
Autor:
E. Laureto, E. Di Mauro, M. T. P. Freitas, Jean-Christophe Harmand, D. O. Toginho Filho, H. Iwamoto, S. A. Lourenço, J. L. Duarte, I. F. L. Dias
Publikováno v:
Scopus-Elsevier
A set of heavily doped Al0.48In0.52As samples grown by molecular beam epitaxy on InP (Fe) substrates was investigated using the photoreflectance (PR) technique. The spectra at 300 K are characterized by a transition in the vicinity of the InP energy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f5d81f5793b86411bca58c2aa64bb2e
http://www.scopus.com/inward/record.url?eid=2-s2.0-0032608181&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0032608181&partnerID=MN8TOARS