Zobrazeno 1 - 10
of 199
pro vyhledávání: '"D. Nicolaescu"'
Autor:
Omid Salehi, D. Nicolaescu, Olga Kozyreva, J. Yang, Arjun Mehta, G. Sorescu, Eduardo A. Vega, J. Stone, L. Caprario, P. Ward, T. Rizack, Claudius Conrad, N. Cook
Publikováno v:
HPB. 22:S78
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c1dcad5e716f2ba48b00d13cda2116d
https://doi.org/10.1016/j.hpb.2020.04.550
https://doi.org/10.1016/j.hpb.2020.04.550
Autor:
E.A. Vega, O. Salehi, D. Nicolaescu, S. Krishnan, C. Stallwood, O. Kozyreva, H.J. Asbun, C. Conrad
Publikováno v:
HPB. 22:S35
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2625cf988fb4f35e25f0b33fa74f1965
https://doi.org/10.1016/j.hpb.2020.04.841
https://doi.org/10.1016/j.hpb.2020.04.841
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 645:153-158
Advanced implantation systems used for semiconductor processing require transportation of quasi-parallel ion beams, which have low energy ( 11 B + , 31 P + , 75 As + , E ion =200–1000 eV). Divergence of the ion beam due to space charge effects can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab98befa54f2867286338c8401769b11
https://doi.org/10.1016/j.nima.2010.12.169
https://doi.org/10.1016/j.nima.2010.12.169
Autor:
A. Croitoru, A. Barcu, Gabriela Droc, Dana Tomescu, Vlad Herlea, N. Picu, D. Nicolaescu, I. Popescu, Florin Botea
Publikováno v:
HPB. 20:S457
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56f75ab6d152ee460f62df8ad5777219
https://doi.org/10.1016/j.hpb.2018.06.2873
https://doi.org/10.1016/j.hpb.2018.06.2873
Publikováno v:
Journal of Nanoscience and Nanotechnology. 9:1237-1241
A flow of independent particles, traveling across a biased heterostructure, is shown to produce an essentially constant probability current density in the gate. Based on this observation, a phenomenological boundary condition was proposed for evaluat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::431b2bf0fb5b68bca9606b91672f6755
https://doi.org/10.1166/jnn.2009.c128
https://doi.org/10.1166/jnn.2009.c128
Publikováno v:
Microelectronic Engineering. 83:1950-1956
The current–voltage ( I – V ) characteristics of metal-oxide-semiconductor (MOS) structures with hafnium oxide as the gate dielectric film were studied. Sharp shifts from a low-voltage ohmic regime to a tunneling conduction were observed in the h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51a26dd801812f14a565eeaf2ddad069
https://doi.org/10.1016/j.mee.2006.01.137
https://doi.org/10.1016/j.mee.2006.01.137
Publikováno v:
Microelectronics Reliability. 46:1027-1034
The tunneling of electrons through metal–oxide–silicon (MOS) structures with ultra-thin oxide is modeled using a linear model for the electron potential energy, an approach which simplifies the computation of both the interface potential and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::255b83eaefb4473aee57d472d2159065
https://doi.org/10.1016/j.microrel.2005.10.014
https://doi.org/10.1016/j.microrel.2005.10.014
Publikováno v:
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23(2):649-656
A model for electron field emission from carbon nanotubes (CNTs) has been developed and modeling results are presented. The model assumes that for high emission currents, part of the electrons behave as quasifree. As a result, the spatial confinement
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::34aba22c2d44902c91ce89042384d47d
http://id.nii.ac.jp/1476/00005237/
http://id.nii.ac.jp/1476/00005237/
Autor:
Valeriu Filip, D. Nicolaescu
Publikováno v:
The European Physical Journal Applied Physics. 10:33-42
Several novel field emission devices are analyzed in a unitary way. The devices involve the use of field emitter arrays in a special configuration where the emitted electrons are subject to crossed electric and magnetic fields. Due to the acting elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58809c93ad9380107a9ea3f661433cbe
https://doi.org/10.1051/epjap:2000117
https://doi.org/10.1051/epjap:2000117
Publikováno v:
Ultramicroscopy. 79:159-166
The sensitivity of the “orbitip” ionization vacuum gauge has been studied, by modelling the electron motion and confinement inside the device. The orbitip has two electrodes shaped as coaxial cylinders, and the electrons are provided by a field e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::38ea2a5dbf8cf3a2ed542bcaf83a7347
https://doi.org/10.1016/s0304-3991(99)00068-6
https://doi.org/10.1016/s0304-3991(99)00068-6