Zobrazeno 1 - 10
of 11
pro vyhledávání: '"D. Nd. Faye"'
Autor:
D. Nd. Faye, João Salgado Cabaço, João P. Araújo, Daniela R. Pereira, Rodrigo Mateus, Sérgio Ricardo Magalhães, Katharina Lorenz, Marco Peres, Carlos Díaz-Guerra, Eduardo Alves
Publikováno v:
CrystEngComm. 23:2048-2062
The application of conventional Williamson–Hall (WH) plot analysis to crystals often results in broadening not proportional to the scattering length vector. Several reasons may influence the broadening such as composition or strain heterogeneities,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9659933a5fee15af714d319064831a09
https://doi.org/10.1039/d0ce01669a
https://doi.org/10.1039/d0ce01669a
Autor:
Miguel Sales Dias, Rui M. Almeida, N. Sousa, Luís F. Santos, D. Nd. Faye, Rocío Estefanía Rojas-Hernandez, Eduardo Alves
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 459:71-75
Harvesting solar energy demands efficient solar cells working over the largest region of the solar spectrum possible. The extension of the wavelength region is viable through the use of frequency converting phosphors. Rare earth (RE) pairs fulfill th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c9ddb5fc5950514296ce80e713d17d3
https://doi.org/10.1016/j.nimb.2019.08.027
https://doi.org/10.1016/j.nimb.2019.08.027
Autor:
Wolfhard Möller, Bruno Daudin, Eduardo Alves, M. Felizardo, D. Nd. Faye, Emilio Nogales, Mathieu Kociak, T. Auzelle, Luiz H. G. Tizei, Katharina Lorenz, Marco Peres, Bianchi Méndez, Andrés Redondo-Cubero, Pierre Ruterana, X. Biquard
Publikováno v:
Journal of Physical Chemistry C
Journal of Physical Chemistry C, American Chemical Society, 2019, ⟨10.1021/acs.jpcc.8b12014⟩
Journal of Physical Chemistry C 123(2019)18, 11874-11887
E-Prints Complutense. Archivo Institucional de la UCM
instname
Journal of Physical Chemistry C, 2019, ⟨10.1021/acs.jpcc.8b12014⟩
E-Prints Complutense: Archivo Institucional de la UCM
Universidad Complutense de Madrid
Journal of Physical Chemistry C, American Chemical Society, 2019, ⟨10.1021/acs.jpcc.8b12014⟩
Journal of Physical Chemistry C 123(2019)18, 11874-11887
E-Prints Complutense. Archivo Institucional de la UCM
instname
Journal of Physical Chemistry C, 2019, ⟨10.1021/acs.jpcc.8b12014⟩
E-Prints Complutense: Archivo Institucional de la UCM
Universidad Complutense de Madrid
International audience; Rare earth (RE)-doped GaN nanowires (NWs), combining the well-defined and controllable optical emission lines of trivalent RE ions with the high crystalline quality, versatility, and small dimension of the NW host, are promisi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5fef3641f966b57fcddb7e3488b66bae
https://doi.org/10.1021/acs.jpcc.8b12014
https://doi.org/10.1021/acs.jpcc.8b12014
Autor:
Alexandra-Madalina Siladie, Maria R. Correia, Katharina Lorenz, D. Nd. Faye, E. Alves, Gwenolé Jacopin, Bruno Daudin, Teresa Monteiro, N. Ben Sedrine, J. Cardoso
Publikováno v:
Applied Materials Today
Applied Materials Today, Elsevier, 2021, 22, pp.100893. ⟨10.1016/j.apmt.2020.100893⟩
Applied Materials Today, 2021, 22, pp.100893. ⟨10.1016/j.apmt.2020.100893⟩
Applied Materials Today, Elsevier, 2021, 22, pp.100893. ⟨10.1016/j.apmt.2020.100893⟩
Applied Materials Today, 2021, 22, pp.100893. ⟨10.1016/j.apmt.2020.100893⟩
International audience; In this work, Eu3+-implanted and annealed AlxGa1-xN (0 ≤ x ≤ 1) nanowires (NWs) grown on GaN NW template on Si (111) substrates by plasma-assisted molecular beam epitaxy are studied by µ-Raman, cathodoluminescence (CL), n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e69b1388cab43d721fb7c5c58cb046de
https://hal.archives-ouvertes.fr/hal-03082121/document
https://hal.archives-ouvertes.fr/hal-03082121/document
Autor:
Eduardo Alves, D. Nd. Faye, Katharina Lorenz, Markus Weyers, Max Döbeli, Sérgio Ricardo Magalhães, F. Brunner, Elke Wendler
Publikováno v:
Surface and Coatings Technology, 355
In this work ion implantation effects in AlxGa1−xN alloys were investigated by ion beam analysis, namely, Rutherford backscattering spectrometry/channelling (RBS/C) and heavy ion elastic recoil detection analysis (HI-ERDA) in order to assess the co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::84250add05d3a8b02c33f851073bf591
https://doi.org/10.1016/j.surfcoat.2018.01.020
https://doi.org/10.1016/j.surfcoat.2018.01.020
Autor:
Katharina Lorenz, Markus Weyers, M. Fialho, Teresa Monteiro, N. Ben Sedrine, J. Cardoso, D. Nd. Faye, A.F. Martins, Michal Bockowski, Joana Rodrigues, Sérgio Ricardo Magalhães, A.J. Neves, Veit Hoffmann, Eduardo Alves, Maria R. Correia
Publikováno v:
Surface and Coatings Technology. 355:40-44
AlGaN/GaN-superlattice based diode structures under study were grown by metal organic chemical vapour deposition, then implanted with two different Eu ion beam fluences, and further submitted to high temperature and high pressure thermal annealing tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f508551f0a1005d42725bc931ba9d3b
https://doi.org/10.1016/j.surfcoat.2018.02.004
https://doi.org/10.1016/j.surfcoat.2018.02.004
Autor:
Eduardo Alves, A.J. Neves, M. Bockowski, Maria R. Correia, Veit Hoffmann, D. Nd. Faye, Markus Weyers, Teresa Monteiro, N. Ben Sedrine, Katharina Lorenz, Joana Rodrigues
Publikováno v:
ACS Applied Nano Materials. 1:3845-3858
In this work, we have established the effects of postgrowth annealing and Eu implantation, followed by annealing on an AlGaN/GaN superlattice-based diode structure, containing Mg-doped GaN top p-cap layers. The study is based on the combined informat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3f5269034044aa83bc7936f198e917f
https://doi.org/10.1021/acsanm.8b00612
https://doi.org/10.1021/acsanm.8b00612
Publikováno v:
Journal of Physics D: Applied Physics. 54:245301
In this work, high quality AlGaN layers, grown by metal organic chemical vapour deposition, on a commercial c-sapphire substrate, were implanted at a fluence of 1 × 10 14 A r + ⋅ c m − 2 . Implantation was performed for energies between 25 and 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e818a2559715f20c25adf6840520df1c
https://doi.org/10.1088/1361-6463/abee44
https://doi.org/10.1088/1361-6463/abee44
Autor:
Teresa Monteiro, Joana Rodrigues, Maria R. Correia, N. Ben Sedrine, Markus Weyers, Eduardo Alves, D. Nd. Faye, M. Fialho, Katharina Lorenz, M. Bockowski, Sérgio Ricardo Magalhães, Veit Hoffmann
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 379:251-254
An n-GaN/n-AlGaN/p-GaN light emitting diode (LED) structure was implanted with Eu ions. High temperature high pressure annealing at 1400 °C efficiently decreases implantation damage and optically activates the Eu ions. However, the electrical proper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::666dcbea8d758f039e7df2549e7adf7a
https://doi.org/10.1016/j.nimb.2016.03.028
https://doi.org/10.1016/j.nimb.2016.03.028
Autor:
F. Brunner, M. Felizardo, D. Nd. Faye, Eduardo Alves, Elke Wendler, Sérgio Ricardo Magalhães, Katharina Lorenz, Markus Weyers
Publikováno v:
The Journal of Physical Chemistry C. 120:7277-7283
AlxGa1–xN alloys, covering the entire compositional range (0 ≤ x ≤ 1), were implanted at room temperature with 200 keV argon (Ar) ions to fluences ranging from 1 × 1013 to 2 × 1016 Ar/cm2. The damage formation mechanisms and radiation resista
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f10875b465b51faa64532138c6b8d8aa
https://doi.org/10.1021/acs.jpcc.6b00133
https://doi.org/10.1021/acs.jpcc.6b00133