Zobrazeno 1 - 10
of 43
pro vyhledávání: '"D. N. Zakharov"'
Publikováno v:
Омский научный вестник, Vol 5 (167), Pp 72-76 (2019)
This paper deals with the issues of developing a control system of a spacecraft solar array drive assembly actuator that meets strict requirements for operation at the set angular accelerations and rotation velocities, under the influence of payloa
Externí odkaz:
https://doaj.org/article/1227cfe3db4c48beb4aa54a0a8b7aa2c
Autor:
N. S. Yarmolyuk, E. A. Biryukova, E. С. Tkach, Yu. O. Diagileva, D. R. Husainov, D. N. Zakharov, E. R. Dzheldubaeva, E. I. Nagaeva
Publikováno v:
Scientific Notes of V.I. Vernadsky Crimean Federal University. Biology. Chemistry. 6:281-290
At present, one of the main tasks of the state is to develop and improve the system of health protection and quality of life of the younger generation. In this regard, the search for simple non-invasive methods of monitoring the health of children, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94195d6676bf9e6517a50c5afa0be52b
https://doi.org/10.37279/2413-1725-2020-6-2-281-290
https://doi.org/10.37279/2413-1725-2020-6-2-281-290
Autor:
J. Gu, D.A. Batchelor, Ji-Soo Park, S.M. Bishop, Zuzanna Liliental-Weber, B. Wagner, Z. J. Reitmeier, D. N. Zakharov, Robert F. Davis
Publikováno v:
Journal of Crystal Growth. 300:83-89
The initial and subsequent stages of growth of AlN on 4H–SiC (1 1 2¯ 0) and GaN on AlN (1 1 2¯ 0) have been investigated using atomic force microscopy and X-ray photoelectron spectroscopy. The AlN nucleated and grew via the Stranski–Krastanov m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00875e2c9506280c9ed235de4f5515f3
https://doi.org/10.1016/j.jcrysgro.2006.10.207
https://doi.org/10.1016/j.jcrysgro.2006.10.207
Publikováno v:
Journal of Electronic Materials. 35:1543-1546
Transmission electron microscopy has been used to study undoped and Si-doped InGaN/GaN layers. The doped layers show formation of extrinsic dislocation loops. These defects are not formed in the undoped samples. The highly Si-doped layers show failur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aefc6cab1a0fc1df68f64ec3c0afa481
https://doi.org/10.1007/s11664-006-0146-5
https://doi.org/10.1007/s11664-006-0146-5
Publikováno v:
Semiconductors. 40:728-733
Electrical properties of the Au/Ti-n-GaAs Schottky diodes are studied in relation to the production technology. The forward and reverse current-voltage characteristics of the diodes at low electric fields are analyzed on the basis of the mechanism of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3278ddf254a6c3a4decd66a134f04b2
https://doi.org/10.1134/s1063782606060194
https://doi.org/10.1134/s1063782606060194
Autor:
Zuzanna Liliental-Weber, Ji-Soo Park, D. N. Zakharov, D. Bachelor, Z. J. Reitmeier, Robert F. Davis, B. Wagner
Publikováno v:
Journal of Crystal Growth. 290:504-512
Growth on AlN/4H–SiC ( 1 1 2 ¯ 0 ) substrates of coalesced, non-polar GaN ( 1 1 2 ¯ 0 ) films having volumes of material with reduced densities of dislocations and stacking faults has been achieved from etched stripes via the statistical and expe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::718cfc4f80a1e2872fb4a7565b872ba7
https://doi.org/10.1016/j.jcrysgro.2006.02.011
https://doi.org/10.1016/j.jcrysgro.2006.02.011
Autor:
Hai Lu, Joel W. Ager, D. N. Zakharov, William J. Schaff, Wladek Walukiewicz, Eugene E. Haller, Zuzanna Liliental-Weber, Kin Man Yu
Publikováno v:
Microscopy. 54:243-250
Transmission Electron Microscopy (TEM) and X-ray diffraction (XRD) have been used to study compositional modulation in In(x)Ga(1-x) N layers grown with compositions close to miscibility gap. The samples (0.34x0.8) were deposited by molecular beam epi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4b94a734a9b626344d9f113f9d8918b9
https://doi.org/10.1093/jmicro/dfi033
https://doi.org/10.1093/jmicro/dfi033
Autor:
Junqiao Wu, M.C. Johnson, Edith Bourret-Courchesne, D. N. Zakharov, W. Shan, Zuzanna Liliental-Weber, R.J. Jorgenson, D.E. McCready
Publikováno v:
Journal of Electronic Materials. 34:605-611
Temperature-gradient metalorganic chemical vapor deposition (MOCVD) was used to deposit InxGa1−xN/GaN multiple quantum well (MQW) structures with a concentration gradient of indium across the wafer. These MQW structures were deposited on low defect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd318fe08a9ed9984140b21369abbb57
https://doi.org/10.1007/s11664-005-0072-y
https://doi.org/10.1007/s11664-005-0072-y
Autor:
Junqiao Wu, T. B. Ng, E.D. Bourret-Courchesne, D. N. Zakharov, R.J. Jorgenson, M.C. Johnson, Zuzanna Liliental-Weber, J. R. Williams, D.E. McCready
Publikováno v:
Journal of Applied Physics. 96:1381-1386
GaN template layer strain effects were investigated on the growth of InGaN/GaN LED devices. Seven period InGaN/GaN multiple quantum well structures were deposited on 5{micro}m and 15{micro}m GaN template layers. It was found that the electroluminesce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::857dd777e7118e1fd696ef1fcc74de95
https://doi.org/10.1063/1.1766407
https://doi.org/10.1063/1.1766407
Autor:
Albert V. Davydov, S. Noor Mohammad, W. T. Anderson, Agis A. Iliadis, Mark C. Wood, David J. Smith, Kenneth A. Jones, D. N. Zakharov, Abhishek Motayed, Zuzanna Liliental-Weber, Michael A. Derenge
Publikováno v:
Journal of Applied Physics. 95:1516-1524
A metallization technique has been developed for obtaining low resistance Ohmic contact to n-GaN. The metallization technique involves the deposition of a metal layer combination Ta/Ti/Ni/Au on an n-GaN epilayer. It is observed that annealing at 750
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb76d3db7da7883c64c3ec21437914d6
https://doi.org/10.1063/1.1633660
https://doi.org/10.1063/1.1633660