Zobrazeno 1 - 10
of 10
pro vyhledávání: '"D. N. Nichols"'
Publikováno v:
Microelectronic Engineering. 11:515-520
The application of DESIRE, a dry developable optical resist system, in a 0.5 μm NMOS process is described. The investigations are aimed at understanding the major lithography related aspects such as resist resolution and profile, pattern distortion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee00709390aa232d19b9b6334bcd1076
https://doi.org/10.1016/0167-9317(90)90161-l
https://doi.org/10.1016/0167-9317(90)90161-l
Autor:
R. J. Sladek, D. N. Nichols
Publikováno v:
Physical Review B. 24:3155-3161
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d00d3b71f4393d0a47bd1891bbde3928
https://doi.org/10.1103/physrevb.24.3155
https://doi.org/10.1103/physrevb.24.3155
Publikováno v:
Physical Review B. 18:6807-6812
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::808f8ce6e679479a8bc233192fb393dc
https://doi.org/10.1103/physrevb.18.6807
https://doi.org/10.1103/physrevb.18.6807
Publikováno v:
Physical Review B. 24:3025-3030
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9212a205f62bea74591cd9bb8f91731f
https://doi.org/10.1103/physrevb.24.3025
https://doi.org/10.1103/physrevb.24.3025
Publikováno v:
Physical Review B. 25:3786-3789
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::789c1999ef2af8d1726b56a2a954cc53
https://doi.org/10.1103/physrevb.25.3786
https://doi.org/10.1103/physrevb.25.3786
Publikováno v:
Solid State Communications. 36:667-669
Ultrasonic wave transit times have been measured in n-type InP at room temperature using hydrostatic pressures up to 4 kbar. Linear pressure dependences are found for the elastic stiffness moduli implying that at the high pressure structural-electric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b752df1c7d5112b8e7897202d9d8809d
https://doi.org/10.1016/0038-1098(80)90205-7
https://doi.org/10.1016/0038-1098(80)90205-7
Publikováno v:
MRS Proceedings. 77
The metallurgical reaction at 450°C in forming gas ambient between the Ti diffusion barrier and Al, causing the contact degradation in the Al (1% Si)-Ti multilayer interconnects has been studied. The Ti-Al reaction is reduced by preheating the Ti la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7dd1489ea73c0388842e410cfdb7bc6
https://doi.org/10.1557/proc-77-531
https://doi.org/10.1557/proc-77-531
Autor:
D. N. Nichols, S.-Tong Lee
Publikováno v:
MRS Proceedings. 59
The diffusivities of oxygen in Czochralski Si (CZ-Si) and float-zone Si (FZ-Si) have been measured by using secondary ion mass spectrometry. The diffusivity at 700–1160°C deduced from the outdiffused profiles of oxygen incorporated in CZ-Si shows
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07e7c702d76d146dda6aeb98a37615cf
https://doi.org/10.1557/proc-59-31
https://doi.org/10.1557/proc-59-31
Autor:
D. N. Nichols, R. J. Sladek
Publikováno v:
Physical Review B. 24:6161-6162
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5968363af2e372222708aeeb0fff352b
https://doi.org/10.1103/physrevb.24.6161
https://doi.org/10.1103/physrevb.24.6161
Publikováno v:
Physical Review B. 20:820-820
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07d423ab04f056383ac0e2bf7104df60
https://doi.org/10.1103/physrevb.20.820.2
https://doi.org/10.1103/physrevb.20.820.2