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On the shift of the electroluminescence spectra of In x Ga1 − x N/GaN structures with various indium contents and various substrate materials caused by the stark effect and mechanical stresses

Autor: V. V. Borshch, V. P. Veleschuk, M. P. Kisselyuk, Z. K. Vlasenko, A. I. Vlasenko, D. N. Khmil

Publikováno v: Semiconductors. 49:1007-1011

The shift between the maxima of the electroluminescence spectra of In x Ga1 − x N/GaN structures is measured at forward and reverse bias depending on the indium content x in the quantum well and on the substrate material (SiC, AuSn/Si, and Al2O3).

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::898a39a045fac70427fee21aa6d8305b
https://doi.org/10.1134/s1063782615080229

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Visible Luminescence of the InGaN/GaN Ultraviolet Light-emitting Diodes 365 nm

Autor: I. V. Petrenko, V. P. Tartachnyk, V. P. Veleschuk, O. M. Kamuz, V. V. Borshch, D. N. Khmil, Z. K. Vlasenko, A. V. Shulga, A. I. Vlasenko

Publikováno v: Journal of Nano- and Electronic Physics. 9:05031-1

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ddfb1bb50b29f01115e5628087b8b4ff
https://doi.org/10.21272/jnep.9(5).05031

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Rapid method of determining the suitability of photophosphor suspensions for fabricating white LEDs

Autor: P. F. Oleksenko, N. G. Aleksenko, D. N. Khmil, A. M. Kamuz, O. A. Kamuz

Publikováno v: Journal of Optical Technology. 79:382

A rapid method has been developed for determining the prospects of photophosphor suspensions for fabricating white LEDs. The method was tested on three types of photophosphors in which the absorption coefficients in the 454–464-nm emission region o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9fa71e7383670538e67a723c7d7a5c54
https://doi.org/10.1364/jot.79.000382

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