Zobrazeno 1 - 10
of 35
pro vyhledávání: '"D. N. Braski"'
Autor:
C. Ignatiev, J. Y. Lin, C. H. Wei, K. C. Zeng, D. N. Braski, James H. Edgar, Hongxing Jiang, Z. Y. Xie, Jharna Chaudhuri
Publikováno v:
Journal of Electronic Materials. 29:452-456
BxGa1−xN films were deposited on 6H-SiC (0001) substrates at 1000°C by low pressure MOVPE using diborane, trimethylgallium, and ammonia as precursors. The presence of boron was detected by Auger scanning microprobe, the shift of the (00.2) x-ray d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::615a4c6a86281964be54bcaa502de010
https://doi.org/10.1007/s11664-000-0160-y
https://doi.org/10.1007/s11664-000-0160-y
Autor:
Jingyu Lin, D. N. Braski, K. C. Zeng, Hongxing Jiang, C. Ignatiev, Z. Y. Xie, C. H. Wei, James H. Edgar, J. Chaudhuri
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 4:429-434
Boron was incorporated into GaN in order to determine its limits of solubility, its ability of reducing the lattice constant mismatch with 6H-SiC, as well as its effects on the structural and optical properties of GaN epilayers. BxGa1−xN films were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c198aae24dbd5404607e339d4ee10ee
https://doi.org/10.1557/s1092578300002842
https://doi.org/10.1557/s1092578300002842
Publikováno v:
Journal of Crystal Growth. 191:439-445
The benefits of adding HCl on the low-temperature (1000°C) epitaxial growth of 3C–SiC on Si(1 0 0) were examined. At either silicon rich (C/Si 1) inlet gas ratios, the SiC film composition approached stoichiometry by adding HCl, but only at an inl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86cdab50f6cb0d4d81e48993d5f44163
https://doi.org/10.1016/s0022-0248(98)00212-7
https://doi.org/10.1016/s0022-0248(98)00212-7
Publikováno v:
Diamond and Related Materials. 7:35-42
The effects of the simultaneous addition of diborane and ammonia on the nucleation density and growth rate of diamond prepared by hot-filament assisted chemical vapor depositions were examined. The diamond nucleation density and growth rate decreased
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e15f1a6a1ae2ea19a2f9cbaf887f2cb5
https://doi.org/10.1016/s0925-9635(97)00159-3
https://doi.org/10.1016/s0925-9635(97)00159-3
Publikováno v:
Journal of Materials Research. 11:1870-1873
Borosilicate glass films were made by the sol-gel method from tetraethoxysilane and trimethylborate precursors. The precursor or glass composition at each stage of processing was analyzed to determine the sources of boron loss. The films were heated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31629777bc6f3e84eb0a3282d5915339
https://doi.org/10.1557/jmr.1996.0237
https://doi.org/10.1557/jmr.1996.0237
Autor:
E. D. Winters, D. N. Braski
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:1348-1351
Auger electron spectroscopy (AES) and x‐ray photoelectron spectroscopy (XPS) were used to study a problem of poor adhesion of plated Ni/Au contact layers in ceramic electronic packages. XPS surveys showed that the Ni/Au films failed at the Mo conta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e37ad82ab5b05ecf088e5a88dde79f7b
https://doi.org/10.1116/1.579952
https://doi.org/10.1116/1.579952
Autor:
D. N. Braski, K. B. Alexander
Publikováno v:
Journal of Materials Research. 10:1016-1023
Auger Electron Spectroscopy (AES) has been used to examine as-received and oxidized silicon carbide whiskers and their respective whisker/matrix interfaces after fabrication into SiC-whisker-reinforced alumina composites. As-received whisker surfaces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5c548192e21b13344cae64473e22d07
https://doi.org/10.1557/jmr.1995.1016
https://doi.org/10.1557/jmr.1995.1016
Autor:
Camden R. Hubbard, T. R. Watkins, K. J. Kozaczek, Benjamin Ballard, Paul Predecki, D. N. Braski
Publikováno v:
Advances in X-ray Analysis. 39:363-370
Depth profiles of intrinsic in-plane, biaxial stresses were obtained as a function of τ, the 1/e penetration depth, in a 1.0 um thick planar d. c. magentron sputter deposited molybdenum film using asymmetric grazing incidence x-ray diffraction (GIXD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5f949dd7130d36ce884a799b1c87aad
https://doi.org/10.1154/s0376030800022771
https://doi.org/10.1154/s0376030800022771
Publikováno v:
Journal of Materials Research. 9:2251-2257
X-ray photoelectron spectroscopy (XPS) was performed in as-received, thermally annealed, and laser-irradiated sapphire and alumina specimens in order to study the effects of the different treatments on surface chemistry and properties. Laser irradiat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51f083f69791c23d522d4e3410861f44
https://doi.org/10.1557/jmr.1994.2251
https://doi.org/10.1557/jmr.1994.2251
Publikováno v:
Advances in X-ray Analysis. 37:189-196
Intrinsic stresses as a function of σ, the 1/e penetration depth were measured for a smooth, 1μm thick, fine grained, cylindrical post magnetron sputtered molybdenum film deposited on a vycor glass substrate in the dynamic deposition mode. Using gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7daff864a53c071bd79bcbfd4d7070c4
https://doi.org/10.1154/s0376030800015688
https://doi.org/10.1154/s0376030800015688