Zobrazeno 1 - 10
of 108
pro vyhledávání: '"D. Mencaraglia"'
Autor:
Roberto Mendonça Faria, Helder Nunes da Cunha, Lucas Fugikawa Santos, D. Mencaraglia, Françoise T. Reis, Rodrigo Fernando Bianchi
Publikováno v:
Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual)
Universidade de São Paulo (USP)
instacron:USP
Universidade de São Paulo (USP)
instacron:USP
In this paper, a detailed study of the capacitance spectra obtained from Au/doped-polyaniline/Al structures in the frequency domain (0.05 Hz–10 MHz), and at different temperatures (150–340 K) is carried out. The capacitance spectra behavior in se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2b03d650240de7a35b176c88f6df476a
https://doi.org/10.1007/s00339-009-5152-z
https://doi.org/10.1007/s00339-009-5152-z
Publikováno v:
IEEE Transactions on Dielectrics and Electrical Insulation. 13:1074-1081
Polyaniline (PANI) sandwich structures with Al and/or Au electrodes have been investigated using temperature dependent I-V measurements and impedance spectroscopy in the 50 mHz -1 MHz frequency range. The I-V measurements on the Au/PANI/Au structure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0c307d8895392a47a6b408edfb9bd0e
https://doi.org/10.1109/tdei.2006.247834
https://doi.org/10.1109/tdei.2006.247834
Publikováno v:
IEEE Transactions on Dielectrics and Electrical Insulation. 13:1074-1081
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba3cd617f52a40712e4d492371c64b25
https://doi.org/10.1109/tdei.2006.1714932
https://doi.org/10.1109/tdei.2006.1714932
Autor:
F.T. Reis, M. Oukachmih, D. Mencaraglia, P. Destruel, S. Oould Saad, P. Jolinat, Isabelle Séguy
Publikováno v:
Synthetic Metals
Synthetic Metals, 2003, 138 (1–2), pp.33-37. ⟨10.1016/S0379-6779(02)01284-5⟩
Synthetic Metals, Elsevier, 2003, 138 (1–2), pp.33-37. ⟨10.1016/S0379-6779(02)01284-5⟩
Synthetic Metals, 2003, 138 (1–2), pp.33-37. ⟨10.1016/S0379-6779(02)01284-5⟩
Synthetic Metals, Elsevier, 2003, 138 (1–2), pp.33-37. ⟨10.1016/S0379-6779(02)01284-5⟩
International audience; Metal-substituted phthalocyanine (MPc) thin films as zinc- or copper-phthalocyanine are often used as charge injection layers for organic electroluminescent or photovoltaic devices. It is then important to characterize their e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3484d455112d2f84a4ded9da7def6100
https://doi.org/10.1016/s0379-6779(02)01284-5
https://doi.org/10.1016/s0379-6779(02)01284-5
Autor:
R. Brüggemann, W. Bronner, P. Roca i Cabarrocas, D. Mencaraglia, Jean-Paul Kleider, Michael Mehring
Publikováno v:
Journal of Non-Crystalline Solids. :551-555
Due to its specific microstructure with nanocrystals embedded in an amorphous matrix, polymorphous silicon (pm-Si:H) has been shown to present interesting properties for large area electronic applications. In particular, this material exhibits a lowe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2318b4269f32cb93f9cc2726ca0f3726
https://doi.org/10.1016/s0022-3093(01)01201-7
https://doi.org/10.1016/s0022-3093(01)01201-7
Publikováno v:
Journal of Non-Crystalline Solids. :1207-1212
Comparisons of polycrystalline silicon materials are made using both density of states measurements made on thin films transistors and transmission and scanning electron microscopy micrographs. We show that in solid phase crystallised materials, in-g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cf544d5a510369d310ded745abcd1df
https://doi.org/10.1016/s0022-3093(98)00279-8
https://doi.org/10.1016/s0022-3093(98)00279-8
Publikováno v:
Thin Solid Films. 296:137-140
Two kinds of insulators, PECVD silicon nitride (SiN) and DECR silicon dioxide (SiO 2 ), are compared using top gate metal/insulator/semiconductor structures based on amorphous silicon (a-Si:H). The comparison is based on quasistatic capacitance measu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec20001fa676cb72e0808c6c611c62ad
https://doi.org/10.1016/s0040-6090(96)09372-8
https://doi.org/10.1016/s0040-6090(96)09372-8
Autor:
P. Roca i Cabarrocas, C. Clerc, Christian Godet, C. Guedj, F. Houze, Daniel Bouchier, G. Calvarin, D. Mencaraglia, Jacques Boulmer
Publikováno v:
Applied Surface Science. 102:28-32
Si 1− x − y Ge x C y films have been grown by pulsed laser induced epitaxy (PLIE) from C + implanted pseudomorphic Si 1− x Ge x films and from hydrogenated amorphous a-SiGeC:H films deposited on Si(001). The laser treated samples are examined b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c3a1a6ab8f9288b84fceaba7626803f
https://doi.org/10.1016/0169-4332(96)00013-x
https://doi.org/10.1016/0169-4332(96)00013-x
Publikováno v:
Journal of Non-Crystalline Solids. :318-321
Thermal bias annealing experiments have been carried out on aluminum/silicon nitride/hydrogenated amorphous silicon top gate structures, and analyzed by quasistatic capacitance measurements. The quasistatic capacitance versus bias curves always show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c400b8b242cd0585aef98d63652898e3
https://doi.org/10.1016/0022-3093(95)00695-8
https://doi.org/10.1016/0022-3093(95)00695-8
Publikováno v:
Journal of Non-Crystalline Solids. 187:313-318
Quasistatic capacitance measurements are used to study the effect of thermal bias annealing where small gate bias stresses ranging from − 5V to + 6V are applied at 200°C for 15 min on top nitride amorphous silicon-silicon nitride MIS structures. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5975115c4213ef27031e0ffaf7c4cda7
https://doi.org/10.1016/0022-3093(95)00156-5
https://doi.org/10.1016/0022-3093(95)00156-5