Výsledky vyhledávání - "D. Marin-Cudraz"

Ultracompact ESD Protection With BIMOS-Merged Dual Back-to-Back SCR in Hybrid Bulk 28-nm FD-SOI Advanced CMOS Technology

Autor: D. Marin-Cudraz, Charles-Alexandre Legrand, Jean-Daniel Lise, Johan Bourgeat, Philippe Galy, Nicolas Guitard

Publikováno v: IEEE Transactions on Electron Devices. 64:3991-3997

The main purpose of this paper is to introduce an ultracompact device for electrostatic discharge (ESD) protection based on a bipolar metal oxide silicon (BIMOS) transistor merged with a dual back-to-back silicon-controlled rectifier (SCR) for bulk a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::acaf1491a9567f1025742e9330afb319
https://doi.org/10.1109/ted.2017.2741524

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Sharp-switching band-modulation back-gated devices in advanced FDSOI technology

Autor: Charles-Alex Legrand, Philippe Ferrari, D. Marin-Cudraz, Sorin Cristoloveanu, Yohann Solaro, Hassan El Dirani, Pascal Fonteneau

Publikováno v: Solid-State Electronics
Solid-State Electronics, Elsevier, 2017, 128, pp.180-186. ⟨10.1016/j.sse.2016.10.008⟩

International audience; A band-modulation device with a free top surface, named Z3-FET (Zero front-gate, Zero swing slope and Zero impact ionization) and fabricated in the most advanced Fully Depleted Silicon-On-Insulator technology, is demonstrated

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3d70f12ffbb0127dde4b01e0af45a52f
https://hal.archives-ouvertes.fr/hal-02003239

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A band-modulation device in advanced FDSOI technology: Sharp switching characteristics

Autor: Sorin Cristoloveanu, Pascal Fonteneau, Hassan El Dirani, Yohann Solaro, Philippe Ferrari, Dominique Golanski, Charles-Alex Legrand, D. Marin-Cudraz

Publikováno v: Solid-State Electronics
Solid-State Electronics, Elsevier, 2016, 125, pp.103-110. ⟨10.1016/j.sse.2016.07.018⟩

International audience; A band-modulation device is demonstrated experimentally in advanced FDSOI (Fully Depleted SOI). The Z2-FET (Zero Impact Ionization and Zero Subthreshold Slope FET) is a very recent sharp switching device which achieves remarka

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::75d9da66d0b06600ce7280ca509f39a5
https://hal.archives-ouvertes.fr/hal-02003135

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A sharp-switching gateless device (Z3-FET) in advanced FDSOI technology

Autor: Sorin Cristoloveanu, Yohann Solaro, H. El Dirani, P. Ferrari, D. Marin-Cudraz, Charles-Alexandre Legrand, Dominique Golanski, Pascal Fonteneau

Publikováno v: 2016 EUROSOI-ULIS Proceedings
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2016, Vienna, Austria. pp.131-134, ⟨10.1109/ULIS.2016.7440070⟩

session 9: Advanced Devices ad Three-Dimensional Integration; International audience; A systematic study of a novel band modulation device (Z3-FET: Zero gate, Zero swing slope and Zero impact ionization) fabricated in most advanced Fully Depleted Sil

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ec7bbf904c8a6c8ea5ea92a089edf3e
https://hal.archives-ouvertes.fr/hal-02006226

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Symmetrical ESD trigger and pull-up using BIMOS transistor in advanced CMOS technology

Autor: Ghislain Troussier, Johan Bourgeat, Nicolas Guitard, D. Marin-Cudraz, Jean Jimenez, Alexandre Dray, Philippe Galy, Blaise Jacquier

Publikováno v: Microelectronics Reliability. 52:1998-2004

The purpose of this paper is to present a new trigger design solution to address a double challenge. The first challenge is to trigger a dual back to back SCR during an ESD event with symmetrical response. And the second one is to obtain a pull-up fu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cfc73c4af385c7c1006f95f2561e068b
https://doi.org/10.1016/j.microrel.2012.06.117

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Reliability impact due to high current, lattice and hot carriers temperatures on β(2×2) matrix ESD power devices for advanced CMOS technologies

Autor: Jean Jimenez, D. Marin-Cudraz, Blaise Jacquier, Philippe Galy, Sylvain Dudit, Johan Bourgeat

Publikováno v: Microelectronics Reliability. 51:1608-1613

The main purpose of this paper is to present the behavior of a β (2×2) matrix ESD power device with the effects of high ESD current, lattice and hot carriers temperatures. The beta matrix is a candidate for ESD device network for advanced CMOS tech

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::afef2cae6aa00b593cc0ff02b053d2a9
https://doi.org/10.1016/j.microrel.2011.07.046

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Experimental investigation of ESD design window for fully depleted SOI N-MOSFETs

Autor: Thomas Benoist, D. Marin-Cudraz, Pierre Perreau, Olivier Faynot, Sorin Cristoloveanu, Christel Buj, P. Gentil, Philippe Galy, Claire Fenouillet-Beranger

Publikováno v: Microelectronic Engineering. 88:1276-1279

In this article, the impact in FDSOI technology, of ground plane and buried oxide (BOX) size on the robustness and on the NMOS triggering voltage (Vt1) is shown. We show experimentally that firstly thin BOX devices are more robust than thick BOX devi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0e2d8c7ee1fad1eaeab00d9a1497421f
https://doi.org/10.1016/j.mee.2011.03.112

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Evaluation of the ESD performance of local protections based on SCR or bi-SCR with dynamic or static trigger circuit in 32nm

Autor: Philippe Galy, D. Marin-Cudraz, J. Bourgeat, Marise Bafleur, Christophe Entringer

Publikováno v: Microelectronics Reliability. 50:1379-1382

The reliability of electronic devices against electrostatic discharge stresses is still a severe challenge, particularly for deep sub-micron technologies such as the CMOS 32 nm in this work. The paper presents a comparison between four ESD protection

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0cc842279492f9284614e66052c794af
https://doi.org/10.1016/j.microrel.2010.07.025

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Innovative high-density ESD protection device in state of the art UTBB FDSOI technologies

Autor: Yohann Solaro, Pascal Fonteneau, Claire Fenouillet-Beranger, D. Marin-Cudraz, Charles-Alexandre Legrand

Publikováno v: 2015 37th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD).

For the first time, we demonstrate an innovative way to build ESD protection in FDSOI technologies. This protection is comprised of two stacked devices one on the other: a bottom bulk-thyristor and a top thin film triggering device. Low leakage curre

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f0c9d1366878ed17b9cdb556bb54f264
https://doi.org/10.1109/eosesd.2015.7314808

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New modular bi-directional power-switch and self ESD protected in 28nm UTBB FDSOI advanced CMOS technology

Autor: D. Marin-Cudraz, Johan Bourgeat, Ph. Galy

Publikováno v: ICICDT

The aim of this paper is to introduce a new design of modular bi-directional power switch for 28nm Ultra Thin Body and BOX (UTBB) Full Depleted (FD) SOI advanced CMOS technology and beyond. Moreover, this proposed solution is self-protected against E

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4efc503e501e97109ec6e0bb887bca6c
https://doi.org/10.1109/icicdt.2014.6838590

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