Zobrazeno 1 - 10
of 90
pro vyhledávání: '"D. Maczka"'
Autor:
B. Słowiński, A. Drozdziel, Marcin Turek, Yu. V. Yushkevich, D. Maczka, Artur Wójtowicz, Krzysztof Pyszniak, J. Zuk
Publikováno v:
Acta Physica Polonica A. 125:1400-1404
Thermal desorption spectrometry measurements were performed for Ar implanted Si samples. Implantation energy Ei varied in the range 85 175 keV. The release of implanted Ar in two steps was observed in the temperature range 93
Autor:
A. Drozdziel, D. Maczka, Yu. A. Vaganov, Krzysztof Pyszniak, Slawomir Prucnal, Marcin Turek, Yu. V. Yushkevich
Publikováno v:
Instruments and Experimental Techniques. 55:469-481
Three variants of the design of ion sources are described: (1) with a hollow cathode and an anode-evaporator system in the rear part of the source, (2) with a cylindrical anode, and (3) with a hollow cathode and an anode in the front part. It is show
Autor:
J. Sielanko, D. Maczka, A. Pyszniak, Yu. V. Yushkevich, Yu. A. Vaganov, A. Drozdziel, A. Latuszynski, Marcin Turek
Publikováno v:
Instruments and Experimental Techniques. 52:90-98
The ion-extraction process is investigated using the numerical model of a plasma ion source. The operating characteristics of the ion-optical system, such as the dependence of the plasma meniscus surface and the ion current on the extraction voltage,
Autor:
Marcin Turek, Yu. A. Vaganov, A. Pyszniak, A. Latuszynski, D. Maczka, J. Sielanko, A. Droździel, Yu. V. Yushkevich
Publikováno v:
Instruments and Experimental Techniques. 50:552-556
The current of ions extracted from a plasma source has been measured as a function of extraction voltage Ue. Comparison of the obtained characteristics to theoretical predictions has shown that the experimental data agree with the Child-Langmuir theo
Publikováno v:
Vacuum. 72:143-147
The effects of ion implantation and subsequent annealing on the surface morphology of thin amorphous chalcogenide films of the As–Se system have been studied. Ion implantation of nitrogen (N + ) with an energy E =100 keV and high doses (typically D
Publikováno v:
Vacuum. 70:141-145
The investigation results of the formation of carbon nitride layers by high dose ion implantation in the multilayer targets are presented. N + ions were implanted in the Si 3 N 4 /C/Si 3 N 4 /Si system. Composition and structural properties of the pr
Publikováno v:
Vacuum. 68:131-137
Ion implantation of aluminum and stainless steel alloys is a useful method for the improvements of their tribological properties and hardness. This paper presents a preliminary study of the influence of titanium implantation on the tribological prope
Publikováno v:
Vacuum. 58:543-550
Using high-contrast Brillouin spectroscopy we have investigated surface acoustic waves in supported layers formed on GaAs substrates by 250 keV In + implantation and subsequent rapid thermal annealing. The angular dispersion of surface acoustic wave
Publikováno v:
Vacuum. 58:536-542
This paper discusses the ion beam production of multiply charged ions in the electromagnetic isotope separator. The paper is divided into five sections, in which the ion source construction is described and a phenomenological model describing the for
Publikováno v:
Vacuum. 83:S124-S126
A special methodology for determination of light element concentrations in subsurface layers of solids is developed. The clue of this methodology is simultaneous application of Rutherford Backscattering Spectroscopy (RBS) and Elastic Recoil Detection