Zobrazeno 1 - 10
of 12
pro vyhledávání: '"D. Macquistan"'
Autor:
T. Bryskiewicz, R. P. Lu, D. Macquistan, B. Bryskiewicz, St. J. Dixon-Warren, S. Ingrey, G. Smith
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:1752-1757
Scanning spreading resistance microscopy (SSRM) is a promising new tool for dopant profiling in semiconductor materials. We present the results of a SSRM study of the cross section of a metalorganic chemical vapor deposited grown optoelectronic struc
Autor:
Andrew D. Macquistan
Publikováno v:
Psychonomic Bulletin & Review. 4:512-515
Two rectangular objects were presented in the visual field, and subjects’ attention was directed to a location on one rectangle by either an endogenous or an exogenous spatial precue. Similar experiments by Egly, Driver, and Rafal (1994) have shown
Autor:
Andrew D. Macquistan
Publikováno v:
Canadian Journal of Experimental Psychology / Revue canadienne de psychologie expérimentale. 48:495-515
The group scanning model of feature integration theory (Treisman & Gormican, 1988) suggests that subjects search visual displays serially by groups, but process items within each group in parallel. The size of these groups is determined by the discri
Publikováno v:
Perception & Psychophysics. 53:221-230
Three target-discrimination experiments were conducted to explore the spatial distribution of covert visual attention following an exogenous cue. On each trial, a brief peripheral onset was followed by a target stimulus in an otherwise empty visual f
Autor:
R.W. Glew, C. Blaauw, R. Driad, C. A. Hampel, D. Macquistan, J. E. Haysom, T. Bryskiewicz, J.E. Greenspan
Publikováno v:
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307).
Zn diffusion during MOCVD growth is studied in a series of different structures using SIMS analysis. A first experiment supports a concentration dependent diffusion rate, and a +1 charge on the Zn interstitial. The Zn diffusion front is found to be q
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 22:912
In this work we investigate metalorganic chemical vapor deposition (MOCVD) diffusion of zinc into undoped InP and InGaAs using dimethylzinc as the diffusant source. The resulting diffusion profiles are measured using secondary ion mass spectrometry.
Autor:
G. M. Smith, A. Majeed, J. T. Szymanski, S. J. Ingrey, D. Macquistan, Anthony J. SpringThorpe, I. C. Bassignana
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:1032
Pyrolytic boron nitride crucibles, used for the containment of aluminum in molecular‐beam epitaxy systems, are attacked by the molten metal. The reaction appears to be self‐limiting, with the formation of a coating of aluminum nitride on the cruc
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