Zobrazeno 1 - 10
of 107
pro vyhledávání: '"D. Machajdík"'
Autor:
F. Gucmann, Ľubomír Vančo, Jan Kuzmik, Prerna Chauhan, D. Machajdík, Alica Rosová, Igor Maťko, Martin Kuball, Edmund Dobročka, Peter Siffalovic, Jaroslav Kováč, Stanislav Hasenöhrl
Publikováno v:
CrystEngComm. 22:130-141
Thick InAlN layers (In-molar fraction >0.37) on GaN buffer layers were prepared using a close-coupled showerhead metalorganic chemical vapor deposition (MOCVD) reactor. This work provides a discussion of the dependence of reactor parameters (pressure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fee97fd2cee18b116e03799b57aff36d
https://doi.org/10.1039/c9ce01549c
https://doi.org/10.1039/c9ce01549c
Autor:
D. Machajdík, A. P. Kobzev, Vladimír Štrbík, M. Sojková, Dongning Zheng, Marianna Španková, Stefan Chromik, Jiemin Li, Tomas Plecenik
Publikováno v:
Acta Physica Polonica A. 131:848-850
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f82ae0fa8b88980a518ef401b57c95a6
https://doi.org/10.12693/aphyspola.131.848
https://doi.org/10.12693/aphyspola.131.848
Autor:
D. Machajdík, Martin Hulman, Å. Chromik, A. Rosová, Peter Hutár, E. Dobročka, A. P. Kobzev, M. Sojková
Publikováno v:
Nanoengineering: Fabrication, Properties, Optics, and Devices XIV.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44e3220a755a013a07b729facfc7cbf9
https://doi.org/10.1117/12.2273846
https://doi.org/10.1117/12.2273846
Autor:
Boris Hudec, Karol Fröhlich, Š. Gai, Aarne Kasikov, Kristína Hušeková, D. Machajdík, Jaan Aarik, Aivar Tarre
Publikováno v:
Microelectronic Engineering. 88:1525-1528
Properties of TiO"2-based capacitors with RuO"2 bottom electrode were examined. It is shown that post-deposition room temperature plasma treatment and oxygen annealing at 300^oC significantly reduces amount of impurities in the TiO"2 layer. Leakage c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f424d1cf4401584b23d0cdf731739b85
https://doi.org/10.1016/j.mee.2011.03.129
https://doi.org/10.1016/j.mee.2011.03.129
Publikováno v:
Vacuum. 81:1379-1384
Metallic Ru and Hf-based dielectrics such as HfO 2 , HfSiO x and HfSiON, are promising materials for the gate electrode and gate dielectrics, respectively. This paper reports on the thermal stability of gate stack systems comprised of Ru/Hf-based die
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80b7ba35369c9b95a99751d798c91b23
https://doi.org/10.1016/j.vacuum.2007.01.050
https://doi.org/10.1016/j.vacuum.2007.01.050
Autor:
Kristína Hušeková, L. Harmatha, R. Luptak, Karol Fröhlich, M. T˘apajna, Tom Schram, Alexander P. Kobzev, D. Machajdík
Publikováno v:
Microelectronic Engineering. 83:2412-2416
This paper presents an overview of electrical properties measured on advanced gate stacks consisting of a Ru electrode and Hf-based gate dielectrics. The gate stack is projected for application in the sub 45nm complementary metal-oxide-semiconductor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::766488bf2040320eff653b177a5a04be
https://doi.org/10.1016/j.mee.2006.10.047
https://doi.org/10.1016/j.mee.2006.10.047
Autor:
Karol Fröhlich, Alica Rosová, Kristína Hušeková, C. Mansilla, D. Machajdík, M. Ťapajna, R. Luptak, Matej Jergel, Juan P. Espinós
Publikováno v:
Microelectronic Engineering. 80:154-157
We have investigated properties of insulating gadolinium oxide (Gd"2O"3) films in connection with the replacement of silicon oxide (SiO"2) gate dielectrics in new generation of CMOS devices. The Gd"2O"3 layers were grown using metal organic chemical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48835b7652604588d9f15f4fa3ba1559
https://doi.org/10.1016/j.mee.2005.04.059
https://doi.org/10.1016/j.mee.2005.04.059
Autor:
S. Ferrari, Georgios Vellianitis, Karol Fröhlich, Fred Roozeboom, Athanasios Dimoulas, Kristína Hušeková, Claudia Wiemer, D. Machajdík, J.C. Hooker, Noemí Pérez, Marco Fanciulli
Publikováno v:
Materials Science and Engineering: B. 109:117-121
Due to the downscaling of device dimensions in CMOS technology, the introduction of metal gate electrodes and high- k dielectrics will be necessary in order to meet future performance requirements. In particular, deposition techniques such as chemica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e880ca2ba1473331d61f206d062da905
https://doi.org/10.1016/j.mseb.2003.10.061
https://doi.org/10.1016/j.mseb.2003.10.061
Autor:
J. Soltys, P. Pisecny, Karol Fröhlich, L. Harmatha, Kristína Hušeková, Juan P. Espinós, Matej Jergel, D. Machajdík, Jan Jakabovic
Publikováno v:
Materials Science in Semiconductor Processing. 7:231-236
We have investigated properties of insulating lanthanum oxide (La2O3) films in connection with the replacement of silicon oxide (SiO2) gate dielectrics in new generation of CMOS devices. The La2O3 layers were grown using metal organic chemical vapour
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e78798cfdd267b16b5392ecadbae261
https://doi.org/10.1016/j.mssp.2004.09.020
https://doi.org/10.1016/j.mssp.2004.09.020
Autor:
S. Ferrari, D. Machajdík, Fred Roozeboom, C. Rossel, Claudia Wiemer, R. Luptak, Cyril Cabral, Marco Fanciulli, Karol Fröhlich, Alexander P. Kobzev, M. Ťapajna, J.C. Hooker, Kristína Hušeková
Publikováno v:
Materials Science in Semiconductor Processing. 7:265-269
We report on the growth and properties of SrRuO3 films for application as metal gates for CMOS devices. The films were grown at 500 °C by metal-organic chemical vapour deposition on Si substrates with thermal SiO2, atomic-layer deposited Al2O3 and H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2445b3078aa1f49d3798026264b17918
https://doi.org/10.1016/j.mssp.2004.09.012
https://doi.org/10.1016/j.mssp.2004.09.012