Zobrazeno 1 - 10
of 26
pro vyhledávání: '"D. M. Yodgorova"'
Autor:
R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova, D. B. Istamov, G. M. Khamdamov, Sh. M. Kuliyev, A. A. Khakimov, A. Z. Rakhmatov
Publikováno v:
Low Temperature Physics. 49:256-260
Experimental samples of silicon diode temperature sensors for cryogenic thermometry are prepared. The process spread and variability of these diode temperature sensors and their effect on the parameters of these diode temperature sensors are studied.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffad80d26e63d48a13ca3d923d083bed
https://doi.org/10.1063/10.0016843
https://doi.org/10.1063/10.0016843
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 4, Pp 21-27 (2018)
The work is devoted to the study of physical features of electronic processes taking place in the space charge region and in the base region of arsenide-gallium three-barrier photodiode structures with the effect of locking two adjacent transitions.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::79ce2621bdf720d0c220f9a3d17f0973
https://doi.org/10.15222/tkea2018.4.21
https://doi.org/10.15222/tkea2018.4.21
Publikováno v:
Applied Solar Energy. 54:330-332
The results of a study of a photovoltaic silicon structure with two Schottky barriers are presented. It is revealed that Au–nSi–Au structures in a temperature range of room temperature to 40°C at low operating voltages of 0.1–0.2 V are charact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::867633ea7ea83103c61d3b393fdc92c1
https://doi.org/10.3103/s0003701x18050109
https://doi.org/10.3103/s0003701x18050109
Publikováno v:
Frontiers in Optics + Laser Science APS/DLS.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15244707867ac38cf14bdfb57d943801
https://doi.org/10.1364/fio.2019.jtu3a.20
https://doi.org/10.1364/fio.2019.jtu3a.20
Autor:
Abduvaxob A. Karimov, Shukurullo M. Kuliev, Stanislav P. Skorniakov, A. Z. Rakhmatov, A. V. Karimov, D. M. Yodgorova
Publikováno v:
Radioelectronics and Communications Systems. 60:272-274
There are carried out experimental researches of dependence of drop of direct voltage of current-voltage characteristics of the silicone power diode on electrons radiation dose. It is stated that dose increase from 2×10 14 to 2×10 15 Ф e /cm 2 res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0199e71a829f9c2645404e5269e31c96
https://doi.org/10.3103/s0735272717060048
https://doi.org/10.3103/s0735272717060048
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 4, Pp 24-27 (2015)
In recent years, transmission and reception systems of optical signals are widely used. Receiving the optical signal in such systems is carried by photoreceiving modules based on a photodetector, which defines the quality of the received signal, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e9df36a60510a973f505124deb07e7c
https://doi.org/10.15222/tkea2015.4.24
https://doi.org/10.15222/tkea2015.4.24
Publikováno v:
Semiconductors. 48:481-486
The typical parameters of samples of long-channel field-effect transistors and the results of measurement of their functional characteristics are presented. The possible distributions of the carrier mobility over the channel thickness are considered.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9331af53cf3a9d26471166e31fb2956e
https://doi.org/10.1134/s1063782614040137
https://doi.org/10.1134/s1063782614040137
Autor:
A. A. Karimov, D. M. Yodgorova, O. A. Abdulkhaev, A. V. Karimov, A. A. Kahorov, J. J. Kalandarov
Publikováno v:
Instruments and Experimental Techniques. 56:335-338
The principle of determining the temperature of an active junction is considered. The method is based on measuring the temperature dependence of the forward bias voltage using the compensation method that provides the direct calibration of the juncti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2569f4d0bff81e73b2dac428f9ce9962
https://doi.org/10.1134/s0020441213030019
https://doi.org/10.1134/s0020441213030019
Publikováno v:
Semiconductors. 47:387-391
It is experimentally shown that the pulse withstand capacity of transient voltage suppressors, independent of power rating, decreases by the same law with increasing pulse duration, which indicates their optimum design parameters. The interrelation b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60413336c1c8594705a1df93b2362c47
https://doi.org/10.1134/s1063782613030202
https://doi.org/10.1134/s1063782613030202
Publikováno v:
Journal of Engineering Physics and Thermophysics. 86:248-254
Introduction. Imparting linearity to the parametric dependences of diode or transistor structures sensitive to external actions through the selection of a connection mode of these structures provide conditions for using them for their new purpose. Fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aae5591c98fd8c3d53a456aa05f69dbe
https://doi.org/10.1007/s10891-013-0826-y
https://doi.org/10.1007/s10891-013-0826-y