Zobrazeno 1 - 10
of 1 146
pro vyhledávání: '"D. M. Wong"'
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
D. M. Wong Tin Niam, Michelle Lai
Publikováno v:
Internal Medicine Journal. 42:422-427
Background: Computed tomography (CT) of the brain in delirium investigation has a low yield of identifiable causes. We sought to identify the best clinical predictors of an intracranial cause of delirium. Methods: We performed a case–control study
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8599b842f545e2250b3dfd6a2376c90
https://doi.org/10.1111/j.1445-5994.2010.02400.x
https://doi.org/10.1111/j.1445-5994.2010.02400.x
Publikováno v:
ResearcherID
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e0ae9f5390747dcb4047168009c6c06
https://doi.org/10.1111/j.2042-3292.2003.tb00219.x
https://doi.org/10.1111/j.2042-3292.2003.tb00219.x
Publikováno v:
Tissue Antigens. 20:223-226
This study reports the phenotype frequencies (PF) and gene frequencies (GF) of 72 different HLA-A, -B, -C, and -DR antigens in Indian Hindus, thus substantially extending the data previously reported for Asian Indians (Singal 1972, Bale et al. 1980,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::693fc69cd60755da2ccd94f50b349607
https://doi.org/10.1111/j.1399-0039.1982.tb00349.x
https://doi.org/10.1111/j.1399-0039.1982.tb00349.x
Publikováno v:
Journal of Prosthodontics Implant, Esthetic and Reconstructive Dentistry. 11:168-175
Purpose This investigation examined the effect of 5 different cements on the retention strength of prefabricated endodontic dowels placed into root canals previously obturated with gutta percha and a zinc oxide/eugenol (ZOE) sealer. Materials and Met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::08df82fa1c75b4c479561262d6aa429e
https://doi.org/10.1053/jpro.2002.127619
https://doi.org/10.1053/jpro.2002.127619
Publikováno v:
International Endodontic Journal. 35:372-378
Hagge MS, Wong RDM, Lindemuth JS. Effect of three root canal sealers on the retentive strength of endodontic posts luted with a resin cement. International Endodontic Journal, 35, 372–378, 2002. Aim This investigation examined what effect three dif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0f5048f393d5dd6d47df458084b627a7
https://doi.org/10.1046/j.0143-2885.2001.00493.x
https://doi.org/10.1046/j.0143-2885.2001.00493.x
Publikováno v:
Journal of Prosthodontics. 11:19-24
Purpose This investigation examined what effect cement thickness had on retention of prefabricated endodontic dowels luted with a composite resin cement (Panavia 21 OP; J Morita, Irvine, CA) into canals previously obturated with gutta percha and a eu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dda0d0cfe5cde2979ff75682104525aa
https://doi.org/10.1111/j.1532-849x.2002.00019.x
https://doi.org/10.1111/j.1532-849x.2002.00019.x
Autor:
C. T. Chiu, K. Y. Cheung, K. M. Lai, C. Li, D. M. Wong, Kok-Lung Chan, T. S. Lun, M. Y. Law, Wing K. Fung
Publikováno v:
International Journal of Legal Medicine. 114:281-284
The allele distributions at the 12 short tandem repeat (STR) loci D3S1358, HUMvWA, HUMFIBRA/FGA, HUMTHO1, HUMTPOX, HUMCSF1P0, D5S818, D13S317, D7S820, D8S1179, D21S11 and D18S51 have been determined for 284 unrelated Chinese in Hong Kong. The combine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc9bf9a9139c256734b9f1cf275f5cbc
https://doi.org/10.1007/s004140000160
https://doi.org/10.1007/s004140000160
Autor:
N. G. Tarr, D. M. Wong
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:783-786
A theoretical study of the scalability of the SiGe channel pmetal–oxide–semiconductor field effect transistor to the 0.1 μm generation is presented. Devices with n+ polysilicon gates, p+ polysilicon gates, and intermediate workfunction p+ SiGe g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c303286bacb41fa274bf4048eb66f827
https://doi.org/10.1116/1.582180
https://doi.org/10.1116/1.582180