Zobrazeno 1 - 3
of 3
pro vyhledávání: '"D. M. Wilt"'
Autor:
B. Wernsman, D. M. Wilt, G. P. Schmuck, R. J. Wehrer, I. Ju, C. B. Geller, R. R. Siergiej, R. W. Smith
Publikováno v:
AIP Conference Proceedings.
0.6 eV InGaAs/InPAs double heterostructure n/p/n tunnel junction monolithic interconnected modules (TJ‐MIMs) having p‐type bases doped uniformly at 2×1017 cm−3 and inhomogeneously graded from 4×1016 cm−3 to 4×1017 cm−3 (10:1 doping ratio
Publikováno v:
AIP Conference Proceedings.
This paper presents the results of an investigation to demonstrate thermophotovoltaic energy conversion using InGaAs photovoltaic cells, yttrium‐aluminum‐garnet‐ (YAG‐) based selective emitters, and bandpass/reflector filters, with the heat s
Autor:
D. M. Wilt, R. W. Hoffman
Publikováno v:
Review of Scientific Instruments. 64:2704-2705
A technique of heating the exhaust lines is described whereby phosphorus in the exhaust portion of an organometallic vapor phase epitaxy reactor is encouraged to deposit in the red form rather than the pyrophoric white form. This technique is simple,