Zobrazeno 1 - 10
of 16
pro vyhledávání: '"D. M. Szmyd"'
Publikováno v:
Journal of Applied Physics. 74:1057-1071
A study of the electrical and optical properties of the Se deep donor states in AlxGa1−xAs:Se grown by metalorganic vapor phase epitaxy (MOVPE) process is reported. A novel experimental technique is presented to determine the absolute energy and th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70bffccbb61bc050fb6f18799bc1e6c1
https://doi.org/10.1063/1.354953
https://doi.org/10.1063/1.354953
Publikováno v:
Physical Review B. 46:15828-15832
The time evolution of the population of hot electrons in the satellite X valley in ${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As was measured by femtosecond pump-probe infrared (IR)-absorption spectroscopy. The dy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aab9e654d2c2a397bee446c65bfab6e4
https://doi.org/10.1103/physrevb.46.15828
https://doi.org/10.1103/physrevb.46.15828
Publikováno v:
Physical Review Letters. 68:662-665
Hot electrons in ${\mathrm{Al}}_{0.6}$${\mathrm{Ga}}_{0.4}$As were produced in the ${\mathit{X}}_{6}$ valley from a photoexcited indirect transition by a 585-nm femtosecond pump pulse. The time evolution of the population of electrons in the bottom o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d5f000bc446e496bfd47fcaf36a802b
https://doi.org/10.1103/physrevlett.68.662
https://doi.org/10.1103/physrevlett.68.662
Publikováno v:
Physical Review B. 45:1450-1453
An investigation of the hot-carrier relaxation in GaAs/(Al,Ga)As quantum wells and bulk GaAs in the high-carrier-density limit is presented. Using a time-resolved luminescence up-conversion technique with \ensuremath{\le}80-fs temporal resolution, ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5cea2eba33f18448934bd3f3cb16a59
https://doi.org/10.1103/physrevb.45.1450
https://doi.org/10.1103/physrevb.45.1450
Publikováno v:
The Journal of Chemical Physics. 93:7706-7715
GaAs/AlxGa1−xAs single quantum wells (SQWs) have been characterized by various spectroscopies and studied as electrodes in photoelectrochemical cells and in gold Schottky barrier structures. The techniques used were photoreflectance (PR), photolumi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d95794f3ef5310da4061edee7d2a8f9d
https://doi.org/10.1063/1.459350
https://doi.org/10.1063/1.459350
Publikováno v:
Journal of Applied Physics. 68:2367-2375
A systematic study of the photoluminescence (PL) of Se‐doped n‐type GaAs grown by metalorganic chemical vapor deposition is reported. A new method is presented to determine the electron effective mass of n+‐direct‐gap semiconductors from the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a83f7166cd31fda3e96fccf0833d324d
https://doi.org/10.1063/1.346520
https://doi.org/10.1063/1.346520
Publikováno v:
Journal of Applied Physics. 68:2376-2381
A study of the mobility μ of Se‐doped n+‐GaAs grown by metalorganic chemical vapor deposition is presented. A significant decrease in μ is observed for n>1×1018 cm−3, which is a general characteristic of n+‐GaAs. Previous explanations that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11a3d90250fef4a51ad6232135fd3d40
https://doi.org/10.1063/1.346495
https://doi.org/10.1063/1.346495
Publikováno v:
Semiconductor Science and Technology. 7:B337-B339
An investigation of the hot carrier relaxation in GaAs/(AlGa)As quantum wells and bulk GaAs in the high carrier density limit is presented. Using a time-resolved luminescence up-conversion technique with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2670b8f8f82a4d0bb2b591e17609cab4
https://doi.org/10.1088/0268-1242/7/3b/086
https://doi.org/10.1088/0268-1242/7/3b/086
Publikováno v:
Semiconductor Science and Technology. 7:B173-B175
The time evolution of the electron population in the bottom of the X6 valley in Al0.6Ga0.4As was obtained by a femtosecond visible-pump and infrared (IR)-probe absorption spectroscopy. The L6 to X6 intervalley scattering time of approximately 200 fs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e25850a6502f43d6ec2e74a682d94fc
https://doi.org/10.1088/0268-1242/7/3b/042
https://doi.org/10.1088/0268-1242/7/3b/042
Publikováno v:
Applied Physics Letters. 59:2001-2003
Heavily C‐doped GaAs grown by atmospheric pressure metalorganic vapor phase epitaxy using CCl4 as the C‐dopant source has been annealed to study the stability of C acceptors at very high doping levels (p=1018–1020 cm−3). In layers with initia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::083165957f242cb4149c23737279e0fb
https://doi.org/10.1063/1.106167
https://doi.org/10.1063/1.106167