Zobrazeno 1 - 7
of 7
pro vyhledávání: '"D. M. Pazhin"'
Autor:
Kirill D. Shcherbachev, V. I. Zinenko, D. M. Pazhin, M. I. Voronova, Vladimir T. Bublik, V.N. Mordkovich, Yu. A. Agafonov
Publikováno v:
Crystallography Reports. 58:1030-1036
The influence of the implantation of silicon single crystals by fluorine, nitrogen, oxygen, and neon ions on the distribution of strain and the static Debye-Waller factor in the crystal lattice over the implanted-layer depth has been investigated by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ad3926d3525c08192a16e8d97dd5868
https://doi.org/10.1134/s1063774513070183
https://doi.org/10.1134/s1063774513070183
Publikováno v:
Instruments and Experimental Techniques. 55:701-708
The possibilities of controlling the characteristics of field-effect Hall probes (FEHPs) that are based on “silicon-on-insulator” structures, whose design contains a field system of the “metal-insulator-semiconductor-insulator-metal” (MISIM)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fee3a34746c74518ca6b4a9ce67bc78f
https://doi.org/10.1134/s0020441212060024
https://doi.org/10.1134/s0020441212060024
Publikováno v:
Semiconductors. 45:738-742
Specific features of formation of radiation defects in thin silicon layer of silicon-on-insulator (SOI) structures have been studied. It is shown that there are differences between variations in the structural and electrical properties of the thin si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8c1f056ca5602f2eb000a10053d4432
https://doi.org/10.1134/s1063782611060224
https://doi.org/10.1134/s1063782611060224
Autor:
D. M. Pazhin, V. N. Mordkovich, N.P. Barradas, Kirill D. Shcherbachev, V. T. Bublik, Eduardo Alves
Publikováno v:
physica status solidi (a). 204:2645-2650
The differences in the secondary processes proceeding in the silicon layer of SOI and reference bulk silicon wafers are revealed by using High-Resolution X-ray diffraction and Rutherford Backscattering spectroscopy methods. The damage depth profiles
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3745017fa8f25c34ce6b0935b7aeef6f
https://doi.org/10.1002/pssa.200675698
https://doi.org/10.1002/pssa.200675698
Publikováno v:
Journal of Physics D: Applied Physics. 38:A126-A131
The effect of in situ photoexcitation on the generation of structure defects in Si crystals implanted by Ar+ and Ne+ ions was studied using high-resolution x-ray diffraction. Photoexcitation was found to decrease the residual concentration of radiati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5384b287d01bba4b390e36e243d2bf1f
https://doi.org/10.1088/0022-3727/38/10a/024
https://doi.org/10.1088/0022-3727/38/10a/024
Autor:
N.I. Omelianovskaya, A. V. Leonov, M. L. Baranochnikov, V.N. Mordkovich, V.P. Goncharov, M.M. Filatov, A. D. Mokrushin, D. M. Pazhin
Publikováno v:
2007 7th International Symposium on Electromagnetic Compatibility and Electromagnetic Ecology.
The design features and main characteristics of the new type of magnetic field converters, i.e., the controllable Field Effect Hall Sensor based on the "silicon-on-insulator" (SOI) structure, are considered. The FEHS design features and the use of SO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21013ef23a5d1dcca7cc9754fd50ea28
https://doi.org/10.1109/emceco.2007.4371698
https://doi.org/10.1109/emceco.2007.4371698
Publikováno v:
Progress in SOI Structures and Devices Operating at Extreme Conditions ISBN: 9781402005763
Current- and Hall-gate voltage characteristics, as well as C-V characteristics of Field Effect Hall Sensors (FEHS) have been measured before and after gamma-irradiation under different operating conditions. The FEHS operation during irradiation has a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f8d8da551cd6faf4702b0beeedaf03f
https://doi.org/10.1007/978-94-010-0339-1_15
https://doi.org/10.1007/978-94-010-0339-1_15
