Zobrazeno 1 - 6
of 6
pro vyhledávání: '"D. M. Malta"'
Autor:
D. Irvine, D. M. Malta, B. A. Fox, J. A. von Windheim, Jean-Pierre Fleurial, H. A. Wynands, Jan W. Vandersande
Publikováno v:
Physical Review B. 49:5745-5748
The acceptor concentration of two type-IIb natural diamonds has been measured by Hall effect (to 1300 K), capacitance-voltage (CV), and secondary-ion mass-spectroscopy measurements. Reduction of contact effects in both Hall and CV measurements result
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::54307aede64a9ed7f2f02a3363a73f73
https://doi.org/10.1103/physrevb.49.5745
https://doi.org/10.1103/physrevb.49.5745
Publikováno v:
Journal of Applied Physics. 74:1179-1187
Low‐resistance ohmic contacts have been fabricated on a naturally occurring B‐doped diamond crystal and on polycrystalline diamond films by B ion implantation and subsequent Ti/Au bilayer metallization. A high B concentration was obtained at the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4d48c7df963d290e213c6683d93eba8
https://doi.org/10.1063/1.354918
https://doi.org/10.1063/1.354918
Publikováno v:
Journal of Electronic Materials. 22:391-398
Naturally occurring semiconducting single crystal (type IIb) diamonds and boron doped polycrystalline thin films were characterized by differential capacitance-voltage and Hall effect measurements, as well as secondary ion mass spectroscopy (SIMS). R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10de95b59845677b53b1239d6bc952f4
https://doi.org/10.1007/bf02661667
https://doi.org/10.1007/bf02661667
Publikováno v:
Diamond and Related Materials. 2:841-846
The transport properties of type IIb (naturally B-doped), single-crystal diamond were investigated by differential capacitance-voltage ( C - V ) measurements, Hall effect measurements and resistivity measurements. The results for the Hall effect and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a41384756e4592aba3e077a81515f1c6
https://doi.org/10.1016/0925-9635(93)90235-t
https://doi.org/10.1016/0925-9635(93)90235-t
Publikováno v:
Applied Physics Letters. 62:2926-2928
Hall‐effect and resistivity measurements were performed on simultaneously deposited B‐doped homoepitaxial and polycrystalline diamond films, as well as a (100)‐oriented type‐IIb natural diamond crystal, over a temperature range of 140–600 K
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5174a75a8a619306022e9e3f6970e881
https://doi.org/10.1063/1.109199
https://doi.org/10.1063/1.109199
Autor:
A. J. Tessmer, Brian R. Stoner, J. Holmes, A. T. Sowers, David L. Dreifus, D. M. Malta, Robert J. Nemanich, R. C. Glass
Publikováno v:
SPIE Proceedings.
Highly oriented, (100) textured diamond films have been grown on single-crystal Si substrates via microwave plasma enhanced chemical vapor deposition. A multistep deposition process including bias-enhanced nucleation and textured growth was used to o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb3d12b9d2214c43d10f542a63762a2d
https://doi.org/10.1117/12.171752
https://doi.org/10.1117/12.171752