Zobrazeno 1 - 10
of 15
pro vyhledávání: '"D. M. Krasovitsky"'
Publikováno v:
Journal of Communications Technology and Electronics. 63:296-299
Photoelectric properties of different stressed InGaAs/AlGaAs heterostructures with quantum wells grown by the method of molecular beam epitaxy on GaAs substrates for mid-wavelength infrared largeformat photodetector arrays operating in the spectral r
Autor:
S. A. Kukushkin, N. V. Komarov, A. L. Dudin, Dmitry A. Kiselev, O. N. Sergeeva, Alexander V. Solnyshkin, A. A. Bogomolov, E. Yu. Kaptelov, I. P. Pronin, S. V. Senkevich, D. M. Krasovitsky, S. V. Ksenich
Publikováno v:
Ferroelectrics. 477:121-130
Structural characterization of the epitaxial thin aluminum nitride (AlN) 1-μm-thick films grown on SiC/(111)Si substrate by molecular beam epitaxy method was done. The films are shown to be single crystals of (0002) orientation with parameter full w
Publikováno v:
SPIE Proceedings.
Using of complex equipment SemiTEq shown in example of a closed cycle of basic technological operations for production of high-power field microwave transistors based on gallium nitride in the "Svetlana-Rost" JSC. Basic technological operations are s
Publikováno v:
Advanced Materials Research. 854:135-140
The growth of AlN buffer layer at extremely high temperature (1100-1150oC) in ammonia MBE STE3N2 system is shown to be the key step to obtain high quality GaN layers for DHFET channels. The buffer layer sequence from c-sapphire substrate involved AlN
Publikováno v:
Semiconductors. 49:92-94
The specific features of how nitride HEMT heterostructures are produced by NH3 and plasma-assisted (PA) molecular-beam epitaxy (MBE) are considered. It is shown that the use of high-temperature AlN/AlGaN buffer layers grown with ammonia at extremely
Autor:
S. I. Petrov, V. P. Chalyi, A. É. Byrnaz, D. M. Krasovitsky, Yu.V. Pogorelsky, M. V. Stepanov, A. P. Shkurko, M. A. Sokolov, I. A. Sokolov, M. V. Pavlenko, A. N. Alekseev
Publikováno v:
Semiconductors. 41:1005-1010
The effect of growth conditions (V/III ratio, substrate temperature) on the properties of materials in AlN-GaN systems is discussed. A concept of the growth of the AlN/AlGaN/GaN multilayer heterostructure, which provides the improvement of crystal qu
Autor:
N. I. Podolskaya, V. P. Chaly, D. M. Krasovitsky, S. B. Aleksandrov, K. A. Bulashevich, L. E. Velikovsky, I. A. Sokolov, M. V. Pavlenko, D. A. Baranov, Yu.V. Pogorelsky, M. A. Sokolov, S. I. Petrov, S. Yu. Karpov
Publikováno v:
physica status solidi (c). 2:2688-2691
The double heterostructure (DHS) high-electron mobility transistor (HEMTs) grown by ammonia molecular beam epitaxy (MBE) is investigated both experimentally and theoretically. The band diagram and the sheet 2D electron concentration are computed, pre
Publikováno v:
Semiconductors. 46:1429-1431
The deposition of a multilayer buffer layer that includes a high-temperature AlN layer grown at a temperature above 1100°C has made it possible to reduce the dislocation density in a GaN layer by 1.5–2 orders of magnitude to values in the range fr
Publikováno v:
2014 24th International Crimean Conference Microwave & Telecommunication Technology.
Autor:
S. I. Petrov, V. P. Chaly, D. M. Krasovitsky, V. V. Mamaev, A. N. Alexeev, V. G. Sidorov, N S Arcebashev
Publikováno v:
Journal of Physics: Conference Series. 690:012042
Key issues of epitaxial growth of III-nitrides on mismatched substrates are analysed. Thick AlN "templates" grown at extremely high temperatures and transition layers allow to reduce the dislocation density down to the order of 108 cm-2.