Zobrazeno 1 - 5
of 5
pro vyhledávání: '"D. M. Krasovitskii"'
Publikováno v:
Russian Microelectronics. 41:400-404
Multilayered nitride heterostructures AlN/AlGaN/GaN/AlGaN are grown using a Nanofab-100 multichamber domestic complex involving a STE3N3 specialized installation of molecular beam epitaxy. The obtained heterostructures have high structural quality, s
Autor:
S. B. Aleksandrov, Yu. A. Matveev, D. M. Krasovitskii, D. A. Baranov, M. V. Pavlenko, M. V. Stepanov, I. A. Sokolov, Yu. V. Pogorel’skii, V. P. Chalyi, A. P. Kaidash, N. B. Gladysheva, A. A. Chernyavskii, S. I. Petrov, A. A. Dorofeev
Publikováno v:
Semiconductors. 38:1235-1239
A concept for the design of experimental AlGaN/GaN/AlGaN double heterostructures with a two-dimensional electron channel are discussed, together with their main properties. The structures were formed by ammonia molecular-beam epitaxy on sapphire subs
Publikováno v:
Semiconductors. 32:412-416
We have developed a technology for producing n-type GaxIn1−xN/p-Si heterostructures by combined pyrolysis of indium and gallium monoammoniate chlorides, making it possible to obtain heterolayers with composition varying over wide limits (from GaN u
Autor:
D. M. Krasovitskii, A. P. Shkurko, V. P. Chalyi, M. V. Stepanov, A. P. Kaidash, M. V. Pavlenko, I. A. Sokolov, Yu. V. Pogorel’skii, S. I. Petrov, D. A. Baranov
Publikováno v:
Technical Physics Letters. 30:580-582
InGaN/GaN heterostructures have been grown by molecular beam epitaxy (MBE) using ammonia as a source of nitrogen. The influence of the growth temperature and rate on the incorporation of indium into the epitaxial layers and the position of the corres
Autor:
M. V. Stepanov, Yu. S. Kuz’michev, V. P. Chalyi, I. A. Sokolov, D. A. Baranov, S. I. Petrov, S. A. Lermontov, V. V. Volkov, A. P. Kaidash, M. A. Sokolov, V. P. Ivanova, D. M. Krasovitskii, Yu. V. Solov’ev, Yu. V. Pogorel’skii, M. V. Pavlenko
Publikováno v:
Technical Physics Letters. 30:380-382
The experimental technology and characteristics of domestic AlGaN/GaN high electron mobility transistors are described. The results show good prospects for further development.