Zobrazeno 1 - 4
of 4
pro vyhledávání: '"D. M. Krasovitskiĭ"'
Autor:
A. P. Shkurko, V. P. Chalyĭ, M. V. Stepanov, M. A. Sokolov, I. A. Sokolov, A. N. Alekseev, Yu. V. Pogorel’skiĭ, D. M. Krasovitskiĭ, A. É. Byrnaz, M. V. Pavlenko, S. I. Petrov
Publikováno v:
Technical Physics Letters. 34:785-788
We have studied the influence of conditions used for the growth of InGaN layers by the molecular beam epitaxy (with ammonia as a source of nitrogen) on the properties of GaN/InGaN heterostructures. It is established tat the temperature dependence of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b29672b1bda79ad883736b43551e529
https://doi.org/10.1134/s1063785008090216
https://doi.org/10.1134/s1063785008090216
Autor:
S. B. Aleksandrov, M. V. Stepanov, Yu. V. Pogorel’skiĭ, M. Yu. Pogorel’skiĭ, L. É. Velikovskiĭ, I. É. Velikovskiĭ, S. I. Petrov, A. P. Shkurko, M. A. Sokolov, A. É. Byrnaz, D. M. Krasovitskiĭ, M. V. Pavlenko, A. V. Veretekha, A. N. Alekseev, V. P. Chalyĭ, A. G. Tkachenko, I. A. Sokolov
Publikováno v:
Technical Physics Letters. 32:960-963
High-power field-effect transistors (FETs) are among the main applications of heterostructures based on group III metal nitrides, which in most cases implement the classical GaN/AlGaN structure with a single junction. An alternative approach based on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8c7ed44bc2407c764780f3166f78d63
https://doi.org/10.1134/s1063785006110162
https://doi.org/10.1134/s1063785006110162
Autor:
I. A. Sokolov, M. V. Pavlenko, M. A. Sokolov, A. N. Alekseev, L. É. Velikovskiĭ, D. M. Krasovitskiĭ, A. P. Shkurko, S. B. Aleksandrov, S. I. Petrov, M. Yu. Pogorel’skiĭ, M. V. Stepanov, A. É. Byrnaz, A. G. Tkachenko, Yu. V. Pogorel’skiĭ, I. É. Velikovskiĭ, V. P. Chalyĭ
Publikováno v:
Technical Physics Letters. 34:300-302
We report preliminary results on the transfer of the ammonia MBE technology of AlN/AlGaN/GaN/AlGaN heterostructures to silicon substrates. Optimization of the growth conditions allowed the number of macroscopic cracks in the epilayers to be reduced a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59cc19c68ba9de32cf581a028992a21e
https://doi.org/10.1134/s1063785008040093
https://doi.org/10.1134/s1063785008040093
This book provides a summary of the current state-of-the-art in SiC and GaN and identify future areas of development. The remarkable improvements in material quality and device performance in the last few years show the promise of these technologies
