Zobrazeno 1 - 10
of 25
pro vyhledávání: '"D. M. Kazantsev"'
Autor:
N. V. Semenin, A. S. Borisenko, I. V. Zalivako, I. A. Semerikov, M. D. Aksenov, K. Yu. Khabarova, N. N. Kolachevsky, S. I. Glazyrin, V. A. Lykov, S. A. Karpov, N. G. Karlykhanov, D. A. Gryaznykh, V. Yu. Bychenkov, L. N. Karelina, N. S. Shuravin, A. S. Ionin, S. V. Bakurskiy, S. V. Egorov, I. A. Golovchanskiy, V. I. Chichkov, V. V. Bol’ginov, V. V. Ryazanov, D. M. Kazantsev, V. L. Alperovich, V. A. Tkachenko, Z. D. Kvon
Publikováno v:
JETP Letters. 116:912-913
An Erratum to this paper has been published: https://doi.org/10.1134/S0021364022390023
Publikováno v:
Journal of Physics: Conference Series. 2227:012008
The interaction between intersecting vicinal and dislocation-induced atomic steps on crystal surfaces is studied experimentally on Au(111) and GaAs(001) and numerically using Monte-Carlo simulation. The interaction between intersecting steps leads to
Publikováno v:
Applied Surface Science. 561:149987
The effect of jump in electron mass on the electron transfer through interfaces with positive and negative potential steps is considered in relation with practically important photoemission and photon-enhanced thermionic emission from semiconductors
Autor:
I.O. Akhundov, A.S. Kozhukhov, Alexander V. Latyshev, D M Kazantsev, D.V. Sheglov, V.L. Alperovich
Publikováno v:
Applied Surface Science. 406:307-311
The GaAs(001) step-terraced surface relief is studied under oxidation, wet oxide removal and thermal smoothing by ex situ atomic force microscopy with local monitoring of specific atomic steps using lithographic marks for surface area localization. O
Publikováno v:
Acta Materialia
Acta Materialia, Elsevier, 2019, 175, pp.206-213. ⟨10.1016/j.actamat.2019.06.018⟩
Acta Materialia, Elsevier, 2019, 175, pp.206-213. ⟨10.1016/j.actamat.2019.06.018⟩
The interaction between vicinal atomic steps and slip traces – straight monatomic steps produced on a crystal surface by the emergence of dislocations – is experimentally investigated and compared to Monte-Carlo simulations. Near the point of app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb07a2280841c7cdaec8b462b453485b
https://hal.archives-ouvertes.fr/hal-03480685
https://hal.archives-ouvertes.fr/hal-03480685
Publikováno v:
SSRN Electronic Journal.
The interaction between vicinal atomic steps and slip traces - straight monatomic steps produced on a crystal surface by the emergence of dislocations - is experimentally investigated and compared to Monte-Carlo simulations. Near the point of apparen
Publikováno v:
Journal of Physics: Conference Series. 1695:012105
The evolution of the electron escape probability from p-GaAs(Cs, O) to vacuum was measured under the transition from the state of negative to the state of positive electron affinity. The transition was induced by the deposition of excess cesium or ox
Autor:
D M Kazantsev, E. E. Rodyakina, I.O. Akhundov, N.S. Rudaya, V.L. Alperovich, Alexander V. Latyshev
Publikováno v:
Scripta Materialia. 114:125-128
Formation and interaction of curved vicinal and straight dislocation-induced steps of monatomic height on smooth GaAs(001) surface is studied under thermo-mechanical stress relaxation in GaAs/AlGaAs heterostructures bonded to glass. Typical dislocati
Publikováno v:
Applied Surface Science. 359:372-379
Ostwald ripening and step-terraced morphology formation on the GaAs(0 0 1) surface during annealing in equilibrium conditions are investigated experimentally and by Monte Carlo simulation. Fourier and autocorrelation analyses are used to reveal surfa
Publikováno v:
Journal of Physics: Conference Series. 1482:012013
A contactless two-beam modulated photoemission technique for measuring the photovoltage on the surface of highly doped semiconductors is proposed and verified for the p+-GaAs surface with adsorbed Cs. The surface photovoltage evolution under the Cs d