Zobrazeno 1 - 10
of 204
pro vyhledávání: '"D. M. Gaponova"'
Publikováno v:
Semiconductors. 53:1363-1366
Residual-photoconductivity spectra (RPS) are studied for HgTe/CdHgTe quantum-well heterostructures of n- and p-type conduction at T = 4.2 K. RPS is shown to be both positive (an increase in the carrier concentration in the quantum well) and negative
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::419c4b07ffe70c527af9bbeba756fe10
https://doi.org/10.1134/s106378261910021x
https://doi.org/10.1134/s106378261910021x
Autor:
Sergey A. Dvoretsky, V. I. Gavrilenko, D. M. Gaponova, K. V. Maremyanin, Vladimir Rumyantsev, Nikolay N. Mikhailov, K. E. Spirin
Publikováno v:
Semiconductors. 52:1586-1589
The effects of the residual photoconductivity in HgTe/CdHgTe (013) double quantum-well heterostructures are studied at T = 4.2 K. It is shown that the residual photoconductivity in this system has a bipolar character, i.e., both positive and negative
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e082c1b50e507aff13b1b8527016e33
https://doi.org/10.1134/s1063782618120230
https://doi.org/10.1134/s1063782618120230
Publikováno v:
Semiconductors. 50:1691-1695
The processes associated with the transfer of excitonic excitations between tunnel-uncoupled quantum wells (QW) and the influence of the local electric field were investigated in AlGaAs/GaAs heterostructures by the method of photoluminescence excitat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b1a383e91ef72d4b7763b2b153fad38
https://doi.org/10.1134/s1063782616120034
https://doi.org/10.1134/s1063782616120034
Autor:
N. V. Baidus, V. Ya. Aleshkin, B. N. Zvonkov, D. M. Gaponova, A. N. Yablonsky, S. V. Morozov, O. V. Vikhrova, Z. F. Krasilnik, V. G. Shengurov
Publikováno v:
Semiconductors. 50:1435-1438
We report the observation of stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on Si(001) substrates with the application of a relaxed Ge buffer layer. Stimulated emission is observed at 77 K under pulsed opt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e00b152032aeb28e3629558039c66b66
https://doi.org/10.1134/s1063782616110269
https://doi.org/10.1134/s1063782616110269
Publikováno v:
Technical Physics. 60:442-446
A multifunction setup for coherent optical spectroscopy with excitation of semiconductor structures in a wavelength interval of 750–1800 nm and a time resolution of about 100 fs is presented. Minor adjustments are needed for the measurements of pho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8a4a0a3e52d67853f549dc1f3103a00
https://doi.org/10.1134/s1063784215030159
https://doi.org/10.1134/s1063784215030159
Autor:
V. Ya. Aleshkin, K. V. Maremyanin, D. M. Gaponova, D. I. Kryzhkov, S. V. Morozov, Yu. G. Sadof’ev, D. I. Kuritsyn, Sergey M. Sergeev
Publikováno v:
Semiconductors. 48:1463-1466
The time-resolved photoluminescence of GaAs/AlGaAs quantum-cascade structures under intense pulse excitation is studied. Aside from optical transitions between the ground electron and hole states of a system of two tunnel-coupled quantum wells, the p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33fb4a5f29c4fd9aaf8c4198a609beb0
https://doi.org/10.1134/s1063782614110165
https://doi.org/10.1134/s1063782614110165
Autor:
L. V. Gavrilenko, V. Ya. Aleshkin, D. M. Gaponova, A. M. Kadykov, V. G. Lysenko, Z. F. Krasilnik
Publikováno v:
Journal of Experimental and Theoretical Physics. 117:944-949
We experimentally observed an increase in the intensity of photoluminescence from a wider quantum well (QW) when an exciton transition was induced in the neighboring narrower QW separated from the former one by a tunneling-nontransparent AlGaAs barri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76f31d52916d65428dd042f03809771a
https://doi.org/10.1134/s1063776113130013
https://doi.org/10.1134/s1063776113130013
Autor:
B. N. Zvonkov, A. N. Yablonsky, O. V. Vihrova, D. M. Gaponova, D. I. Kryzhkov, Yu. G. Sadofyev, V. I. Gavrilenko, S. V. Morozov, D. I. Kuritsyn
Publikováno v:
Semiconductors. 46:1376-1380
The type of heterojunction in the GaAs1 − xSbx/GaAs heterostructure at x = 0.36 is studied by photoluminescence spectroscopy and time-resolved photoluminescence. A GaAsSb/GaAs heterostructure with an Sb fraction of 15%, for which we can confidently
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22637ac22522cd4ec2d8593fd87dd9dc
https://doi.org/10.1134/s1063782612110127
https://doi.org/10.1134/s1063782612110127
Autor:
Sergey M. Sergeev, Yu. G. Sadofyev, D. M. Gaponova, D. I. Kryzhkov, V. I. Gavrilenko, K. V. Maremyanin, S. V. Morozov, K. I. Kuritsyn
Publikováno v:
Semiconductors. 46:1411-1414
The spectra and kinetics of the low-temperature interband photoluminescence of epitaxial structures of terahertz quantum cascade lasers is studied under conditions of strong pulsed excitation. Photoluminescence corresponding to transitions between bo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::708db5df195ad4df3051a0e2b9bca9df
https://doi.org/10.1134/s1063782612110103
https://doi.org/10.1134/s1063782612110103
Autor:
V. Ya. Aleshkin, V. G. Lyssenko, D. I. Kuritsyn, D. M. Gaponova, D. I. Kryzhkov, L. V. Gavrilenko, Sergey M. Sergeev, Z. F. Krasilnik
Publikováno v:
JETP Letters. 94:811-815
We report a study into the process of energy transfer between quantum wells divided by 30-nm-thick opaque barriers. It was experimentally observed that the intensity of a photoluminescence signal from a quantum well increased by 15% under resonant ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4ca946525da131a0d9c7c162083f761
https://doi.org/10.1134/s0021364011230020
https://doi.org/10.1134/s0021364011230020