Zobrazeno 1 - 10
of 32
pro vyhledávání: '"D. M. Follstaedt"'
Autor:
S. M. Myers, D. M. Follstaedt
Publikováno v:
Journal of Applied Physics. 86:3048-3063
An approximate continuum method for computing the energy of interaction between cavities and strain fields in complex configurations is described and tested by comparison with results for simple, exactly solvable cases. The method is then used to exa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2058f20606e0fac48fe5160eb3d3afc
https://doi.org/10.1063/1.371167
https://doi.org/10.1063/1.371167
Autor:
D. M. Follstaedt, S. M. Myers
Publikováno v:
Journal of Applied Physics. 79:1337-1350
Copper in Si was shown to be strongly bound at cavities formed by He ion implantation and annealing. Evolution of this system during heating was observed by Rutherford backscattering spectrometry and transmission electron microscopy. Results were mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52b743a4435570948c857537415416ba
https://doi.org/10.1063/1.361031
https://doi.org/10.1063/1.361031
Publikováno v:
Applied Physics Letters. 78:3421-3423
Al0.48In0.52As monolayers (ML) are inserted at the binary-compound interfaces of (AlAs)2 ML(InAs)2 ML short-period superlattices (SPSs) during growth on (001) InP. The insertion of Al0.48In0.52As interlayers greater than 2 ML thick tends to suppress
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e6bf2340b570ab9d1dced067369c1d3
https://doi.org/10.1063/1.1374521
https://doi.org/10.1063/1.1374521
Publikováno v:
Journal of Fusion Energy. 9:263-268
Deuterium was introduced into palladium at atomic ratios greater than one by means of ion implantation at cryogenic temperatures, and a search was made for energetic charged particles from D-D nuclear reactions. Concentrations as high as 1.6 D/Pd wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::999cafe67e025deb0560269ea9d128c7
https://doi.org/10.1007/bf01059240
https://doi.org/10.1007/bf01059240
Publikováno v:
Applied Physics Letters. 69:2059-2061
Cavities formed in Si and Ge and their alloys by He implantation and annealing are demonstrated to have a strong short‐range, attractive interaction with dislocations, with a binding energy calculated to be ≳100 eV when they overlap. Cavities can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d2ed073d1093d86411b0396815b18bd
https://doi.org/10.1063/1.116879
https://doi.org/10.1063/1.116879
Autor:
D. M. Follstaedt
Publikováno v:
Applied Physics Letters. 62:1116-1118
Cavities are formed by ion implanting (001) Si with He and annealing at 800 °C to enlarge and to remove the He. Subsequent annealing at 600 °C results in cavities with well‐defined facets as seen in [110] cross section with transmission electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62260dd14e1a0a7121fd619a8600fb18
https://doi.org/10.1063/1.108760
https://doi.org/10.1063/1.108760
The authors report an experimental and theoretical examination of the interaction of dislocations with microscopic cavities in semiconductors and the consequences for strain relaxation in heteroepitaxial structures. Dislocation-mediated relaxation an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ed96cc35cdedf59e977bcff3813b754
https://doi.org/10.2172/468586
https://doi.org/10.2172/468586
Publikováno v:
MRS Proceedings. 439
Transmission electron microscopy of He-implanted Si-Ge and InGaAs shows an attractive interaction between cavities and dislocations. Calculation indicates that cavities are attracted to dislocations through surrounding strain fields, and strong bindi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e7b8a1a091624aa96ce313a7013260d
https://doi.org/10.1557/proc-439-209
https://doi.org/10.1557/proc-439-209
Publikováno v:
Microscopy and Microanalysis. 9:106-107
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::408f97116343c4fe488f513a3b9529a0
https://doi.org/10.1017/s1431927603440981
https://doi.org/10.1017/s1431927603440981
Publikováno v:
Microscopy and Microanalysis. 8:1188-1189
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91af99d20aeaf9d89f5db139fd1bf2f1
https://doi.org/10.1017/s1431927602107811
https://doi.org/10.1017/s1431927602107811