Zobrazeno 1 - 10
of 10
pro vyhledávání: '"D. M. DePoy"'
Autor:
J. E. Raynolds, D. M. DePoy, J.M. Borrego, G. W. Charache, C. T. Ballinger, T. Donovan, P. F. Baldasaro
Publikováno v:
Journal of Applied Physics. 89:3319-3327
This report presents an assessment of the efficiency and power density limitations of thermophotovoltaic (TPV) energy conversion systems for both ideal (radiative limited) and practical (defect-limited) systems. Thermodynamics is integrated into the
Moss–Burstein and plasma reflection characteristics of heavily doped n-type InxGa1−xAs and InPyAs1−y
Autor:
Walter Wolf, D. M. DePoy, Arthur J Freeman, Fred H. Pollak, P. F. Baldasaro, Paul Sharps, Todd Holden, W. Mannstadt, Ryoji Asahi, Michael Timmons, Clint B. Geller, K. E. Miyano, J. E. Raynolds, G. W. Charache
Publikováno v:
Journal of Applied Physics. 86:452-458
Degenerately doped (>1019 cm−3) n-type InxGa1−xAs (x∼0.67) and InPyAs1−y (y∼0.65) possess a number of intriguing electrical and optical properties relevant to electro-optic devices and thermophotovoltaic devices in particular. Due to the lo
Autor:
L. R. Danielson, Christine A. Wang, D. M. DePoy, Dmitri Z. Garbuzov, H. K. Choi, M. Freeman, G. W. Charache, P. F. Baldasaro, V. B. Khalfin, Ronald J. Gutmann, J.M. Borrego, Ramon U. Martinelli, S. Saroop
Publikováno v:
Journal of Applied Physics. 85:2247-2252
The hotside operating temperatures for many projected thermophotovoltaic (TPV) conversion system applications are approximately 1000 °C, which sets an upper limit on the TPV diode band gap of 0.6 eV from efficiency and power density considerations.
Autor:
G. W. Charache, J. L. Egley, D. M. Depoy, L. R. Danielson, M. J. Freeman, R. J. Dziendziel, J. F. Moynihan, P. F. Baldasaro, B. C. Campbell, C. A. Wang, H. K. Choi, G. W. Turner, S. J. Wojtczuk, P. Colter, P. Sharps, M. Timmons, R. E. Fahey, K. Zhang
Publikováno v:
Journal of Electronic Materials. 27:1038-1042
Thermophotovoltaic generation of electricity is attracting renewed attention due to recent advances in low bandgap (0.5–0.7 eV) III-V semiconductors. The use of these devices in a number of applications has been reviewed in a number of publications
Autor:
G. W. Charache, D. M. Depoy, R. N. Sacks, C. S. Murray, L. Qin, Steven A. Ringel, M. B. Clevenger
Publikováno v:
AIP Conference Proceedings.
Ultrathin semiconductor device structures incorporating reflective internal or back surface layers have been investigated recently as a means of improving photon recuperation eliminating losses associated with free carrier absorption in conductive su
Publikováno v:
AIP Conference Proceedings.
Previous efficiency measurements [1] have highlighted that to accurately measure and predict thermophotovoltaic (TPV) integrated cell or array efficiencies, a thorough understanding of the system is required. This includes knowledge of intrinsic diod
Publikováno v:
Third NREL Conference on thermophotovoltaic generation of electricity.
A thermophotovoltaic (TPV) efficiency measurement, within a closed cavity, is an integrated test which incorporates four fundamental parameters of TPV direct energy conversion. These are: (1) the TPV devices, (2) spectral control, (3) a radiation/pho
Autor:
D. M. DePoy, L.M. Fraas, G.W. Charache, J.L. Egley, B. C. Campbell, L. R. Danielson, S. Wojtczuk, P. F. Baldasaro, S. Hui
Publikováno v:
Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996.
The current performance status of low-temperature radiator (
Autor:
G. J. Nichols, M. A. Postlethwait, G.W. Charache, M. Freeman, D. M. DePoy, J. R. Parrington, P. F. Baldasaro, J. M. Borrego, E. Brown, M. Zierak
Publikováno v:
AIP Conference Proceedings.
In this paper we present two methods for determining the conversion efficiency of TPV devices. In the first, the conversion efficiency is calculated from measurements of the external quantum efficiency and reflection as a function of wavelength, and
Publikováno v:
AIP Conference Proceedings.
The back surface reflector (BSR) represents the spectral‐control technology that offers the highest spectral utilization factor, Fu, where Fu is defined as the fraction of the total absorbed radiation with energy greater than the semiconductor band