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pro vyhledávání: '"D. M. Artem'ev"'
Publikováno v:
Physics of the Solid State. 54:2421-2424
The stress-strain state in thin structured gallium nitride films on sapphire substrates containing open pores has been simulated. The results have been obtained by the finite element method in the commercial program complex. The stress intensity fact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aecf76ceb54afdd387672928ac03b5ae
https://doi.org/10.1134/s1063783412120165
https://doi.org/10.1134/s1063783412120165
